| Patent application number | Description | Published |
|---|
| 20080246052 | Electronic component assembly with composite material carrier - The present invention relates to an electronic component assembly including a composite material carrier, a circuit carrier made of a dielectric material, a circuit with a conductive material formed on the circuit carrier, an intermediate layer between the circuit carrier and the composite material carrier, and an electronic component arranged on the composite material carrier and electrically connecting to the circuit. | 10-09-2008 |
| 20090122521 | Light-emiting device package - A light-emitting device package is disclosed and comprises at least one light-emitting device and a carrier. The light-emitting device includes a light-emitting diode chip attached to a first surface of a transparent substrate, wherein the chip comprises a first type conductivity semiconductor layer, an active layer and a second type conductivity semiconductor layer. The carrier comprises a p electrode, an n electrode, a platform and a reflective inside wall. The transparent substrate of the light-emitting device is attached to the platform by an adhering layer. In addition, an angle between the first surface of the transparent substrate and the platform is not equal to zero degree, and the better is about 90 degree. | 05-14-2009 |
| 20090173963 | Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 07-09-2009 |
| 20100001312 | Light-emitting device and method for manufacturing the same - A light-emitting device is disclosed. The light-emitting device comprises a substrate, wherein an ion implanted layer on the top surface of the substrate; a thin silicon film disposing on the ion implanted layer; and a light-emitting stack layer on the thin silicon film. This invention also discloses a method of manufacturing a light-emitting device comprising providing a substrate; forming an ion implanted layer on the top surface of the substrate; providing a light-emitting stack layer; forming a thin silicon film on the bottom surface of the light-emitting stack layer; and bonding the light-emitting stack layer to the substrate with the anodic bonding technique. | 01-07-2010 |
| 20100051996 | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND PACKAGE THEREOF - The present application discloses a light-emitting semiconductor device including a semiconductor light-emitting element, a transparent paste layer and a wavelength conversion structure. A first light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a second light which has a wavelength different from that of the first light. In addition, the present application also provides a light-emitting semiconductor device package. | 03-04-2010 |
| 20100072497 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region. | 03-25-2010 |
| 20100120184 | OPTOELECTRONIC DEVICE STRUCTURE - The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer. | 05-13-2010 |
| 20100133999 | MULTICOLOR PACKAGE - An opto-electronic device package structure for multicolor light is disclosed. The package structure comprises a transparent carrier, a circuit layer on the transparent carrier, an opto-electronic device emitting the light of the first wavelength and is electrically connecting with the circuit layer on the transparent carrier, a first wavelength conversion structure on the lateral side of the opto-electronic device, a reflective layer on the first wavelength conversion structure, and a transparent material for package on the reflective layer and on the opto-electronic device. | 06-03-2010 |
| 20100163907 | CHIP LEVEL PACKAGE OF LIGHT-EMITTING DIODE - The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure. | 07-01-2010 |
| 20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 11-11-2010 |
| 20110006312 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 01-13-2011 |
| 20110013422 | LIGHT-EMITTING DEVICE - This application relates to a light-emitting device comprising a light channel having an upper surface, a lower surface opposite to the upper surface, an inner surface intersecting with each of the upper and lower surface by different angles, and an escape surface; and a light-emitting element having a bottom surface substantially parallel to the inner surface and emitting light traveling inside the light channel toward the escape surface. In an embodiment, the escape surface of the light-emitting device is an inclined plane with lens array thereon. | 01-20-2011 |
