Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Chia-Hua Chang
Chia-Hua Chang, Shulin City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100307592 | Three-dimensional indium-tin-oxide electrode, method of fabricating the same, device of fabricating the same, and method of fabricating solar cell comprising the same - A three-dimensional ITO electrode and the method of fabricating the same are disclosed. The three-dimensional ITO electrode of the present invention has a conductive layer and a plurality of ITO nanorods formed on the conductive layer, wherein the length range of the ITO nanorods can vary from 10 nm to 1500 nm. The best length is about 50 nm-200 nm for organic solar cells. When applied into organic optoelectronic devices such as organic solar cells and organic light-emitting diodes (OLEDs), the three-dimensional structure of the ITO electrode may increase the contact area to the active layer, thus improving the electric current collecting efficiency and uniformity of current spreading (flowing). Also, an evaporator, a solar cell comprising the above three-dimensional ITO electrode, and the method of fabricating the solar cell are disclosed. | 12-09-2010 |
Chia-Hua Chang, Taipei County TW
| Patent application number | Description | Published |
|---|---|---|
| 20100040859 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same - The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties. | 02-18-2010 |
| 20100261001 | NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME - The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties. | 10-14-2010 |
| 20110277839 | ED STRUCTURE AND SOLAR CELL INCLUDING THE SAME - An anti-reflection coating (ARC) stacked structure including a first ARC layer and a second ARC layer is provided. The first ARC layer is a continuous layer and the second ARC layer, located over the first ARC layer, is formed in fractals. In addition, a solar cell including the ARC stacked structure is further provided. | 11-17-2011 |
Chia-Hua Chang, Taoyuan TW
| Patent application number | Description | Published |
|---|---|---|
| 20100028652 | METAL STRUCTURE WITH ANTI-EROSION WEAR-PROOF AND MANUFACTURED METHOD THEREOF - The present invention relates to a metal structure with anti-erosion wear-proof and manufactured method thereof. The metal structure with anti-erosion wear-proof includes a metal substrate; a protective layer formed on the metal substrate, the protective layer has a plurality of openings; and an oxide layer formed on the protective layer. The manufactured method of metal structure with anti-erosion wear-proof includes the steps of providing a metal substrate; forming a protective layer on the metal substrate, the protective layer has a plurality of openings; and forming an oxide layer on the protective layer. The present invention transforms the surface of the protective layer into the oxide layer to increase the anti-erosion and wear-proof character of the metal substrate. | 02-04-2010 |
Chia-Hua Chang, Tu-Cheng TW
| Patent application number | Description | Published |
|---|---|---|
| 20090139745 | REPAIR DEVICE FOR PRINTED CIRCUIT BOARD - A repair device for a PCB includes a clamp portion having a plurality of receptacles defined therein, a connector head having a plurality of contacts configured to connect with the PCB, a plurality of conductive lines arranged side by side, and a lead wire. One end of each of the conductive lines is clamped by the clamp portion and exposed to outside of the clamp portion via a corresponding receptacle of the clamp portion, the other end of each of the conductive lines is connected to a corresponding contact of the connector head. Two ends of the lead wire are electrically connected to two of the conductive lines via the corresponding receptacles, thereby switching signal transmission from one of the input terminal of the PCB to another input terminal of the PCB. | 06-04-2009 |
| 20090262976 | POSITION-DETERMINING SYSTEM AND METHOD - A position-determining system for determining position and orientation of an object on a work surface parallel to an X-Y plane of a Cartesian coordinate system includes an image-capturing device, a processor and a recognition assistant. The image-capturing device is directed towards the work surface for capturing images of the object and sending the images to the processor. The processor processes the images captured by the image-capturing device. The recognition assistant is attached on the object. The recognition assistant includes a first recognition assistant part and a second recognition assistant part configured to be readily recognizable in an image examined by the processor. Then the processor determines position and orientation of the object via a template matching algorithm. | 10-22-2009 |
| 20090265659 | MULTI-WINDOW DISPLAY CONTROL SYSTEM AND METHOD FOR PRESENTING A MULTI-WINDOW DISPLAY - An exemplary multi-window display control system comprises: a read module, a display module, and a display; the method for presenting a multi-window display is also provided, the method comprising: reading the size of a display by a read module; sending the size of the display to a display module; displaying two or more display areas on a display according to a predetermined ratio; and presenting one or more functional units in each of the display area. The multi-window display control system and the method for presenting a multi-window method can provide two or more display areas on an electronic platform simultaneously, as well as provide functional unit windows in the corresponding display areas, which improve the speed and convenience of the operation. | 10-22-2009 |
Chia-Hua Chang, Pingtung TW
| Patent application number | Description | Published |
|---|---|---|
| 20090065908 | METHODS OF FABRICATING A MICROMECHANICAL STRUCTURE - Methods of fabricating a microelectromechanical structure are provided. An exemplary embodiment of a method of fabricating a microelectromechanical structure comprises providing a substrate. A first patterned sacrificial layer is formed on portions of the substrate, the first patterned sacrificial layer comprises a bulk portion and a protrusion portion. A second patterned sacrificial layer is formed over the first sacrificial layer, covering the protrusion portion and portions of the bulk portion of the first patterned sacrificial layer, wherein the second patterned sacrificial layer does not cover sidewalls of the first patterned sacrificial layer. An element layer is formed over the substrate, covering portions of the substrate, the first patterned sacrificial layer and second patterned sacrificial layer. The first and second patterned sacrificial layers are removed, leaving a microstructure on the substrate. | 03-12-2009 |
Chia-Hua Chang, Taoyuan County TW
| Patent application number | Description | Published |
|---|---|---|
| 20110267524 | IMAGE CAPTURE METHOD AND PORTABLE COMMUNICATION DEVICE - An image capture method is provided for a portable communication device having a display unit, which real-time displays an image at least including an object to be shot. The method includes sensing a moving acceleration of the portable communication device based on a first gravity-sensing threshold value. A touch focus signal is received so that the portable communication device focuses on one of the objects to be the focus-lock object. Then, according to the touch focus signal, the first gravity-sensing threshold value is changed to a second gravity-sensing threshold value, which is larger than the first gravity-sensing threshold value. The image at least including the focus-lock object is captured. | 11-03-2011 |
Chia-Hua Chang, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20120025270 | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF - This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor. | 02-02-2012 |
Chia-Hua Chang, Taichung City TW
| Patent application number | Description | Published |
|---|---|---|
| 20120122281 | METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR - A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode. | 05-17-2012 |