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Chi, Seoul

Dae Yoon Chi, Seoul KR

Patent application numberDescriptionPublished
20100113763METHOD FOR PREPARATION OF ORGANOFLUORO COMPOUNDS IN ALCOHOL SOLVENTS - The present invention relates to a method for preparation of organofluoro compounds containing radioactive isotope fluorine-18. More particularly, the present invention relates to a method for preparation of organofluoro compound [05-06-2010
201002170031,2,3,4-TETRAHYDROISOQUINOLINE DERIVATIVES HAVING EFFECTS OF PREVENTING AND TREATING DEGENERATIVE AND INFLAMMATORY DISEASES - Provided are 7-hydroxy-6-methoxy-1,2,3,4-tetrahydroisoquinoline derivatives and synthesis methods thereof. The compounds significantly inhibit the production of nitrogen monoxide (NO) and superoxide in an activated microglial cell and expressions of TNF-α, IL-1β inducive NO synthase and cyclooxygenase-2 genes. They also prevent NF-kB shift to a nucleus, decrease reactive oxygen species (ROS), inhibit expression of GTP cyclohydrolase I gene and over-production of tetrahydrobiopterin (BH08-26-2010
201002617272-ARYLBENZOTHIOPHENE DERIVATIVES OR PHARCEUTICALLY ACCEPTABLE SALTS THEREOF, PREPARATION METHOD THEREOF, AND PHARCEUTICAL COMPOSITION FOR THE DIAGNOSIS OR TREATMENT OF DEGENERATIVE BRAIN DISEASE CONTAINING THE SAME AS ACTIVE INGREDIENT - 2-arylbenzothiophene derivatives or pharmaceutically acceptable salts thereof, a preparation method thereof, and a pharmaceutical composition for the diagnosis or treatment of degenerative brain disease containing the same as an active ingredient. Since the 2-arylbenzothiophene derivatives of Formula 1 have a relatively high binding affinity for β-amyloid, they can be used as diagnostic reagents for diagnosing Alzheimer's disease at an early stage by non-invasive techniques when they are labeled with radioisotopes:10-14-2010
20110112293Purification Strategy for Direct Nucleophilic Procedures - The present invention provides novel and advantageous processes for preparing and purifying chemical compounds such as pharmaceuticals. The processes comprise a nucleophilic substitution reaction with a moiety X wherein the leaving group L of a substrate S in the reaction is covalently attached to a purification moiety M. This concept offers a convenient and lime-saving way to purity the desired product S-X from non-reacted precursors S-L-M and by-products L-M.05-12-2011

Patent applications by Dae Yoon Chi, Seoul KR

Dong Pyo Chi, Seoul KR

Patent application numberDescriptionPublished
20100150349METHOD AND SYSTEM FOR PERFORMING QUANTUM BIT COMMITMENT PROTOCOL - A method and system for performing a quantum bit commitment protocol is provided. The method of performing a quantum bit commitment protocol to send bit information from a first party to a second party includes a pre-commit phase to randomly select and send, by the second party, a quantum state to the first party; a commit phase to perform, by the first party, a unitary transformation on the quantum state to combine the bit information with the quantum state and send the unitary-transformed quantum state to the second party; a hold phase to hold the unitary-transformed quantum state for a predetermined time period; and a reveal phase to provide, by the first party, information about the unitary transformation to the second party to open the bit information to the second party. The reveal phase may include a verification process to check if the opened bit information matches the bit information committed in the commit phase. For example, the verification process may be performed by checking if a quantum state obtained by performing an inverse unitary transformation of the unitary-transformed quantum state matches the quantum state selected in the pre-commit phase.06-17-2010

Guang-Fan Chi, Seoul KR

Patent application numberDescriptionPublished
20090175835COMPOSITION FOR TREATING DAMAGE OF CENTRAL OR PERIPHERAL NERVE SYSTEM - The present invention provides a composition for treating damage of central or peripheral nerve system comprising neural precursor cell derived from subcutaneous tissue; neuron obtained by differentiating the neural precursor cell; or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell; a use of neural precursor cell derived from subcutaneous tissue, neuron obtained by differentiating the neural precursor cell, or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell, for the manufacture of an agent for treating damage of central or peripheral nerve system; a method for treating damage of central or peripheral nerve system which comprises administrating to a mammal a therapeutically effective amount of neural precursor cell derived from subcutaneous tissue, neurons obtained by differentiating the neural precursor cell, or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell. Further, the present invention provides a method of preparing the neural precursor cell, neurons, oligodendrocyte or Schwann cell of the present invention.07-09-2009

Hyun Chi, Seoul KR

Patent application numberDescriptionPublished
20080233237Method of Producing a Solid Seasoning Using Liquid Culture of Kojic Mold From Plant Protein Source, a Solid Seasoning Produced From the Same, a General Food Seasoning, Sauce, Dressing, Soysauce, and Processed Food - Provided are a method of producing a solid seasoning including: mixing at least one plant protein source selected from the group consisting of sterilized soy beans, non-fat soy beans and wheat gluten, and a liquid culture medium of kojic mold, and degrading the plant protein source under unsalted and sterile conditions; and drying the degraded product to obtain the solid seasoning, a solid seasoning produced using the method, and a general food seasoning, sauce, dressing, soy sauce or soy bean paste, or processed food including the solid seasoning.09-25-2008

Jae-Hwoan Chi, Seoul KR

Patent application numberDescriptionPublished
20090091955Quasi resonant switching mode power supply - A switching mode power supply (SMPS) and a driving method thereof are provided. The SMPS includes a power supply block that includes a first switch coupled to a first coil of a primary side of a transformer for converting an input voltage, wherein the power supply block supplies power to a second coil and a third coil of a secondary side of the transformer according to operation of the first switch; and a PWM signal generator determines a turn-on time of the first switch according to the input voltage, and the turn-on time is determined regardless of a power magnitude of an output terminal connected to the second coil. Accordingly, screen noise due to a ripple can be eliminated and stress on the switch breakdown due to excessive power input can be reduced to enable an SMPS with stable driving.04-09-2009
20090251926Converter and driving method thereof - A converter is disclosed for using at least one switch to convert an input signal to a square wave signal, and using the square wave signal to generate an output voltage. The converter converts the square wave signal by a switching operation of a switch and generates the output voltage, and includes a switch controller for controlling the switching operation. The switch controller generates a first signal VCT having a first period that varies according to an output voltage, controls the switching operation of the switch by using the first signal, detects the output voltage, a first current Ids10-08-2009

Keong-Koo Chi, Seoul KR

Patent application numberDescriptionPublished
20100270647METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CAPACITOR - Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.10-28-2010

Kyeong-Koo Chi, Seoul KR

Patent application numberDescriptionPublished
20090263970METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE USING SIGE LAYER AS SACRIFICIAL LAYER, AND METHOD OF FORMING SELF-ALIGNED CONTACTS USING THE SAME - There are provided a method of forming a fine pattern of a semiconductor device using a silicon germanium sacrificial layer, and a method of forming a self-aligned contact using the same. The method of forming a self-aligned contact of a semiconductor device includes forming a conductive line structure having a conductive material layer, a hard mask layer, and a sidewall spacer on a substrate, and forming a silicon germanium (Si10-22-2009

Patent applications by Kyeong-Koo Chi, Seoul KR

Mi-Ock Chi, Seoul KR

Patent application numberDescriptionPublished
20090013136De-Interleaving and Interleaving for Data Processing - Among others, techniques and apparatus are described for de-interleaving. A data processing apparatus includes a buffer to store interleaved data; an interleaving index producing unit to produce an interleaving index of the interleaved data; and an output control unit to output the data stored in the buffer using the interleaving index.01-08-2009

Sung-Hon Chi, Seoul KR

Patent application numberDescriptionPublished
20110195550METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, the method including providing a semiconductor substrate; forming a gate pattern on the semiconductor substrate such that the gate pattern includes a gate dielectric layer and a sacrificial gate electrode; forming an etch stop layer and a dielectric layer on the semiconductor substrate and the gate pattern; removing portions of the dielectric layer to expose the etch stop layer; performing an etch-back process on the etch stop layer to expose the sacrificial gate electrode; removing the sacrificial gate electrode to form a trench; forming a metal layer on the semiconductor substrate including the trench; removing portions of the metal layer to expose the dielectric layer; and performing an etch-back process on the metal layer to a predetermined target.08-11-2011

Sung Soo Chi, Seoul KR

Patent application numberDescriptionPublished
20080259709Column redundancy circuit - A column redundancy circuit is disclosed. The column redundancy circuit includes a first control signal generator configured to receive a refresh flag signal having an enable width larger than that of a refresh signal and a control signal and generate a pull-up control signal, a second control signal generator configured to receive the refresh flag signal and an address signal and generate a pull-down control signal, and a column repair fuse circuit configured to receive the pull-up control signal and the pull-down control signal and generate a redundant cell access signal.10-23-2008
20090096487SENSE AMPLIFIER CONTROL CIRCUIT - The present invention discloses a sense amplifier control circuit which controls the sense amplifier. A sense amplifier control circuit comprises a voltage comparing unit outputting delay control signals having a value corresponding to each of divided voltages obtained by dividing a potential of a power supply voltage and a pull-up control signal generating unit outputting an overdrive control signal and a pull-up control signal by an active signal and changing an enable pulse width of the overdrive control signal in response to the delay control signals, whereby it is possible to reduce current consumption caused by unnecessary overdrive operation and prevent a potential drop of the power supply voltage and thus provide operational stability of the semiconductor memory device by providing the overdrive control signal of which the enable pulse width is controlled in response to the potential of the power supply voltage.04-16-2009
20100127773SENSE AMPLIFIER CONTROL CIRCUIT - The present invention discloses a sense amplifier control circuit which controls the sense amplifier. A sense amplifier control circuit comprises a voltage comparing unit outputting delay control signals having a value corresponding to each of divided voltages obtained by dividing a potential of a power supply voltage and a pull-up control signal generating unit outputting an overdrive control signal and a pull-up control signal by an active signal and changing an enable pulse width of the overdrive control signal in response to the delay control signals, whereby it is possible to reduce current consumption caused by unnecessary overdrive operation and prevent a potential drop of the power supply voltage and thus provide operational stability of the semiconductor memory device by providing the overdrive control signal of which the enable pulse width is controlled in response to the potential of the power supply voltage.05-27-2010

Patent applications by Sung Soo Chi, Seoul KR

Young Seung Chi, Seoul KR

Patent application numberDescriptionPublished
20100199901ELECTRICALLY CONDUCTIVE METAL COMPOSITE EMBROIDERY YARN AND EMBROIDERED CIRCUIT USING THEREOF - The present invention relates to an electrically conductive metal composite embroidery yarn and embroidered circuit using thereof which may be applicable to smart textiles. More particularly, this invention relates to an electrically conductive metal composite embroidery yarn and embroidered circuit for smart textiles which can be used as power supply and signal transmission lines. The present invention provides an embroidered circuit which consists of a metal composite embroidery yarn and a dielectric fabric substrate, wherein the electrically conductive metal composite embroidery yarn is embroidered on the dielectric fabric substrate to form a circuit.08-12-2010