| Patent application number | Description | Published |
|---|
| 20080246149 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING DEVICE ISOLATION FILM OF SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises growing a carbon nano tube (CNT) in a contact hole to form a contact plug, thereby preventing diffusion of a tungsten layer. The method does not require forming a titanium nitride (TiN) film deposited to improve an adhesive strength. The CNT has an excellent electric conductivity and a high mechanical strength to improve characteristics of the device. | 10-09-2008 |
| 20090273025 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices. | 11-05-2009 |
| 20100029018 | METHOD FOR REPAIR OF SEMICONDUCTOR DEVICE - The present invention relates to a method for repairing a semiconductor device. The method includes cutting a fuse without creation of residue by transforming the fuse into a nonconductor of high resistance by oxidizing the fuse by irradiating the fuse with an oxygen ion beam instead of a laser in a blowing process. The method includes transforming a fuse corresponding to a defective cell among a plurality of fuses formed in an upper portion of a semiconductor substrate into an oxide film. | 02-04-2010 |
| 20100062594 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - In accordance with an embodiment of the invention the method of manufacturing a semiconductor device is capable of forming a semiconductor substrate having an embossing structure. The method includes forming a layer having a plurality of hemispherical single crystal silicon elements, and forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements, thereby, increasing a length of an effective channel of a transistor. | 03-11-2010 |
| 20100197084 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises forming an insulating layer on a polymer substrate, growing a germanium layer on the insulating layer, forming a gate pattern on the germanium layer, forming a metal layer on the germanium layer including the gate pattern, annealing the metal layer to form a compound layer mixed with the metal layer and the germanium layer, and forming a contact by etching the metal layer. | 08-05-2010 |
| 20100224955 | FUSES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - Devices and methods are disclosed a dielectric interlayer made of materials capable of forming tensile force is formed over a semiconductor substrate, and a fuse metal having stronger tensile force than the first dielectric interlayer is formed over the first dielectric interlayer. Accordingly, formation of fuse residues when blowing a fuse can be prevented. Furthermore, energy and a spot size of a laser applied when blowing a fuse can be reduced. Moreover, damage to neighboring fuses can be prevented, and a fuse made of materials that are difficult to blow the fuse can be cut. Further, since polymer-series materials are used as a dielectric interlayer, the coupling effect between wiring lines can be reduced considerably. | 09-09-2010 |
| 20100270603 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises gates comprising a first conductive layer, landing plug contacts formed adjacent to the gate and formed of a second conductive layer, a bit line formed over the landing plug contacts and formed of a third conductive layer, and storage electrode contacts formed over the landing plug contacts and the bit line and formed of a fourth conductive layer. The first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer are made of the same material. | 10-28-2010 |
| 20110003453 | MANUFACTURING METHOD OF CAPACITOR IN SEMICONDUCTOR - A manufacturing method of a capacitor of a semiconductor device includes a first step of forming a graphene seed film over a substrate; a second step of increasing surface energy of the graphene seed film and performing a first plasma process to the graphene seed film; a third step of growing a graphene on the graphene seed film; a fourth step of growing a nano tube or a nano wire using the graphene as a mask; and a fifth step of sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire. | 01-06-2011 |
| 20110085365 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate including a cell area and a sense amplifier area, a first bit line connected to a bit line contact of the cell area and a first contact of the sense amplifier area, and a second bit line located on the first bit line to overlap with the first bit line on a plan view and connected to a second contact of the sense amplifier area. The semiconductor device applies a folded bit line structure to a 6F2 structure so as to promote competitiveness of a net die, resulting in reduction of production costs. The semiconductor device implements various test patterns for defect analysis, wherein a conventional 6F2-layout open bit line has difficulty in using the test patterns, resulting in an increased production yield. The semiconductor device reduces noise of a sense amplifier, and performs mat-basis repairing, resulting in an increased production yield. | 04-14-2011 |
