| Patent application number | Description | Published |
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| 20090291226 | Apparatus and Method for Double-Plasma Graft Polymerization at Atmospheric Pressure - Disclosed is a n atmospheric-pressure double-plasma graft polymerization apparatus. The apparatus includes a workbench, an initial roller of a roll-to-roll device, an atmospheric-pressure plasma activation device, a peroxide formation device, a coating and grafting device, a drying device, a graft polymerization and curing device, a curing device and a final roller of a roll-to-roll device. The devices are sequentially provided on the workbench. | 11-26-2009 |
| 20100218896 | Atmospheric pressure plasma reactor - An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging. | 09-02-2010 |
| 20110011737 | HIGH-POWER PULSE MAGNETRON SPUTTERING APPARATUS AND SURFACE TREATMENT APPARATUS USING THE SAME - A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece. | 01-20-2011 |
| 20110041766 | PLASMA SOURCE - A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power. | 02-24-2011 |
| 20110053351 | Solar Cell Defect Passivation Method - The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency. | 03-03-2011 |
| 20110088766 | Thin-Film Photovoltaic Device and Method for Manufacturing the Same - A thin-film photovoltaic device comprising at least: a substrate, a transparent electrode layer, a p-type semiconductor as the ohmic contact layer, an intrinsic semiconductor as the light absorption layer, and a magnesium alloy substituted for the n-type semiconductor as the other ohmic contact layer. A method for manufacturing the thin-film photovoltaic device is also provided in the present invention. | 04-21-2011 |
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| 20090197014 | Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition - There is a disclosed apparatus for coating diamond on work pieces via hot filament chemical vapor deposition. The apparatus includes a chamber, a pump for pumping air from the chamber, a pressure controller for con trolling the pressure in the chamber, a grid disposed in the chamber, a grid-bias power supply for providing a positive bias to the grid, a holder for carrying the work pieces, a holder-bias power supply for providing a negative bias to the holder, filaments provided between the grid and the carrier, a filament power supply for energizing the filaments to heat up, a programmable temperature controller for controlling the temperature in the chamber and a pipe for transferring reaction gas into the chamber. | 08-06-2009 |
| 20100218721 | Hollow-cathode discharge apparatus for plasma-based processing - A hollow-cathode discharge apparatus is disclosed for plasma-based processing. The hollow-cathode discharge apparatus includes a vacuum chamber, a hollow cathode disposed in the center of the vacuum chamber, a carrier for synchronously carrying a plurality of work-pieces in the vacuum chamber and a driving element for driving the carrier. | 09-02-2010 |
| 20100225234 | Hollow-cathode plasma generator - A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode. | 09-09-2010 |
| 20110014782 | Apparatus and Method for Growing a Microcrystalline Silicon Film - Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH | 01-20-2011 |
