Patent application number | Description | Published |
20100181683 | VIA DEFINITION FOR SEMICONDUCTOR DIE - A semiconductor die includes a first set of metal lines and a second set of metal lines. The first set of metal lines and the second set of metal lines are placed in alternate planes and are orthogonal to each other. A via is used to connect a first metal line from the first set of metal lines with a second metal line from the second set of metal lines. The via location is offset such that a side of the first metal line is aligned with a side of the second metal line. Consequently, a metal line adjacent to the first metal line does not need to detour around the via. | 07-22-2010 |
20110169528 | CLOCK BUFFER CIRCUIT - A clock buffer for a clock network that reduces leakage current and lowers power consumption. The clock buffer includes a first CMOS transistor, a second CMOS transistor, and a leakage current prevention circuit connected to the first and second CMOS transistors. The leakage current prevention circuit includes a first PMOS transistor, which is connected between the source of a PMOS transistor of the first CMOS transistor and a power supply line, and a second PMOS transistor, which is connected between the source of a PMOS transistor of the second CMOS transistor and the power supply line. The first and second PMOS transistors are deactivated in response to an enable signal generated when a circuit block does not require the clock signal. The first and the second PMOS transistors have predefined widths and lengths such that the addition of these transistors in series with the CMOS transistors does not increase the propagation delay of the clock buffer circuit. Deactivating the first and second PMOS transistors disconnects the CMOS transistors from the power supply line, which prevents current leakage. | 07-14-2011 |
20110246958 | METHOD FOR REDUCING SURFACE AREA OF PAD LIMITED SEMICONDUCTOR DIE LAYOUT - A method for reducing a surface area of a pad limited semiconductor die layout includes choosing an outer die pad row from a group of outer die pad rows on the semiconductor die, each of the outer die pad rows being adjacent an edge of the semiconductor die. Next, the method performs selecting, from the outer die pad row, a common die pad group with die pads that are arranged to be electrically connected to an external connection pad. The method then performs repositioning a subgroup of the common die pad group on an inner die pad row, the inner pad row being adjacent the outer die pad row. After he repositioning there is performed a step of adjusting positions of at least some of the remaining pads in the outer die pad row thereby reducing an overall length of the outer die pad row. The method then provides for repeating the above steps until the surface area of a pad limited semiconductor die cannot be reduced any further by the step of adjusting positions or until every common die pad group, on every one of the outer die pad rows, has been selected by the selecting step. | 10-06-2011 |
20140117521 | SEMICONDUCTOR DEVICE WITH THERMAL DISSIPATION LEAD FRAME - A lead frame for assembling a semiconductor device has a die pad surrounded by lead fingers. Each of the lead fingers has a proximal end close to but spaced from an edge of the die pad and a distal end farther from the die pad. A semiconductor die is attached to a surface of the die pad. The die has die bonding pads on its upper surface that are electrically connected to the proximal ends of the lead fingers with bond wires. An encapsulation material covers the bond wires, semiconductor die and the proximal ends of the lead fingers. Prior to assembly, hot spots of the die are determined and the lead fingers closest to the hot spots are selected to project closer to the die than the other lead fingers. These longer lead fingers assist in dissipating the heat at the die hot spot. | 05-01-2014 |
20140119131 | MEMORY DEVICE REDUNDANCY MANAGEMENT SYSTEM - A system for managing redundancy in a memory device includes memory arrays and associated periphery logic circuits, and redundant memory arrays and associated redundant periphery logic circuits. The memory arrays and a first set of logic circuits associated with the periphery logic circuits corresponding to the memory arrays are connected to the power supply by way of memory I/O switches. The redundant memory arrays and associated redundant periphery logic circuits are connected to the power supply by way of redundant I/O switches. The memory and redundant I/O switches are switched on/off based on an acknowledgement signal generated during a built-in-self-test (BIST) operation of the memory device. | 05-01-2014 |
20140339687 | POWER PLANE FOR MULTI-LAYERED SUBSTRATE - A semiconductor device includes a ground plane and a power plane that lie in spaced, parallel planes. The power plane includes a number of openings formed around its outer edge. A ground ring surrounds the power plane and has fingers that extend towards and are received within corresponding ones of the openings of the power plane. The ground ring is electrically connected to the ground plane with vias. | 11-20-2014 |
20140345117 | SEMICONDUCTOR DEVICE WITH THERMAL DISSIPATION LEAD FRAME - A lead frame for assembling a semiconductor device has a die pad surrounded by lead fingers. Each of the lead fingers has a proximal end close to but spaced from an edge of the die pad and a distal end farther from the die pad. A semiconductor die is attached to a surface of the die pad. The die has die bonding pads on its upper surface that are electrically connected to the proximal ends of the lead fingers with bond wires. An encapsulation material covers the bond wires, semiconductor die and the proximal ends of the lead fingers. Prior to assembly, hot spots of the die are determined and the lead fingers closest to the hot spots are selected to project closer to the die than the other lead fingers. These longer lead fingers assist in dissipating the heat at the die hot spot. | 11-27-2014 |
20150102839 | LOW POWER INVERTER CIRCUIT - A low power inverter circuit includes first and second transistors that receive an input signal at their gate terminals. The first and second transistors are connected by way of their source terminals to third and fourth transistors, respectively. The third and fourth transistors are connected in parallel with fifth and sixth transistors, respectively. The third and fourth transistors are continuously switched on, and the fifth and sixth transistors are controlled in such a way to reduce short circuit current flowing through the first and second transistors when the input signal transitions from one state to another. | 04-16-2015 |