| Patent application number | Description | Published |
|---|
| 20080272467 | Method for Forming Fine Pattern of Semiconductor Device - A method for forming a fine pattern of a semiconductor device includes forming a deposition film over a substrate having an underlying layer. The deposition film includes first, second, and third mask films. The method also includes forming a photoresist pattern over the third mask film, patterning the third mask film to form a deposition pattern, and forming an amorphous carbon pattern at sidewalls of the deposition pattern. The method further includes filling a spin-on-carbon layer over the deposition pattern and the amorphous carbon pattern, polishing the spin-on-carbon layer, the amorphous carbon pattern, and the photoresist pattern to expose the third mask pattern, and performing an etching process to expose the first mask film with the amorphous carbon pattern as an etching mask. The etching process removes the third mask pattern and the exposed second mask pattern. The method also includes removing the spin-on-carbon layer and the amorphous carbon pattern, and forming a first mask pattern with the second mask pattern as an etching mask. | 11-06-2008 |
| 20080305642 | METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer. | 12-11-2008 |
| 20090004604 | METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile. | 01-01-2009 |
| 20090170035 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a first mask pattern over an etch target layer, forming a second mask pattern over the etch target layer, forming spacers at sidewalls of the first mask pattern and the second mask pattern, and etching the etch target layer with an etching mask where the second mask pattern is removed. The method improves a profile of a pad pattern and critical dimension uniformity. | 07-02-2009 |
| 20090170322 | Method for Manufacturing Semiconductor Device Including Vertical Transistor - A method for manufacturing a semiconductor device including a vertical transistor comprises: depositing a n-layered (here, n is an integer ranging from 2 to 6) mask film over a semiconductor substrate; forming a photoresist pattern over the n-layered mask film; etching the mask film with the photoresist pattern as an etching mask until the m | 07-02-2009 |
| 20090170336 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a pattern of a semiconductor device comprises forming a spacer with an oxide film in a SPT process, and removing the spacer formed to have a horn shape before etching an underlying layer, so that the horn shape is transcribed in a lower portion, thereby facilitating control of critical dimension in etching the underlying layer so as to improve a characteristic of the device. | 07-02-2009 |
| 20090191709 | Method for Manufacturing a Semiconductor Device - A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure. | 07-30-2009 |
