| Patent application number | Description | Published |
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| 20100001287 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes. | 01-07-2010 |
| 20100193790 | FLAT PANEL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer. | 08-05-2010 |
| 20100301368 | ORGANIC LIGHT EMITTING DIODE - Provided is an organic light emitting diode (OLED) including a substrate, a first electrode, a second electrode, and an organic layer disposed between the first and second electrodes. The first electrode includes an aluminum (Al)-based reflective film and a transparent conductive film that contacts the Al-based reflective film. The Al-based reflective film includes aluminum, a first element and nickel (Ni). In this structure, galvanic corrosion, which occurs due to a potential difference between electrodes, may not occur between the Al-based reflective film | 12-02-2010 |
| 20100330468 | HALFTONE MASK AND MANUFACTURING METHOD THEREOF AND METHOD FOR FORMING FILM USING THE SAME - Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit. | 12-30-2010 |
| 20110031478 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate having a pixel region and a non-pixel region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-pixel region of the substrate, a first electrode arranged in the non-pixel region and in the pixel region and electrically connected to the semiconductor layer, a gate insulating layer arranged on an entire surface of the substrate and partially exposing the first electrode in the pixel region, a gate electrode arranged on the gate insulating layer to correspond to the semiconductor layer, a pixel defining layer partially exposing the first electrode, an organic layer arranged on the first electrode; and a second electrode arranged on the entire surface of the substrate. | 02-10-2011 |
| 20110050604 | Organic light emitting display apparatus - An organic light emitting display apparatus including a substrate, a first touch sensing electrode layer on the substrate, a first protective layer on the substrate, the first protective layer covering the first touch sensing electrode layer, a ground layer on the first protective layer, the ground layer being electrically grounded, an insulating layer on the ground layer, and an organic light emitting device on the insulating layer. | 03-03-2011 |
| 20110084279 | Organic light emitting diode display - An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer. | 04-14-2011 |
| 20110139611 | Apparatus for Fabricating Thin Film Transistor - In an apparatus for fabricating a thin film transistor, amorphous silicon is deposited on a substrate in a first multi-chamber and is crystallized into polycrystalline silicon without using a separate process chamber or multi-chamber, and the substrate deposited with the amorphous silicon is loaded into a second multi-chamber for forming electrodes, thereby making it possible to minimize a characteristic deviation and improve fabrication process efficiency. The apparatus includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof. | 06-16-2011 |
| 20110139767 | AMRPHOUS SILICON CRYSTALLIZATION APPARATUS - Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode. | 06-16-2011 |
| 20110163980 | Organic light emitting diode display and method of manufacturing the same - A method of manufacturing an organic light emitting diode display includes forming an organic layer on a support, forming a touch sensor on the organic layer, the touch sensor including a touch electrode pattern and a polarizing layer, separating the touch sensor from the support by removing the organic layer, and attaching the touch sensor to an organic light emitting diode display panel. | 07-07-2011 |
| Patent application number | Description | Published |
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| 20090267074 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode. | 10-29-2009 |
| 20090278131 | Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof - A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor. | 11-12-2009 |
| 20100045173 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion. | 02-25-2010 |
