| Patent application number | Description | Published |
|---|
| 20090168531 | METHOD FOR PROGRAMMING A MEMORY STRUCTURE - A memory structure includes a first memory cell and a second memory cell located at an identical bit line and adjacent to the first memory cell. Each memory cell includes a substrate, a source, a drain, a charge storage device, and a gate. A method for programming the memory structure includes respectively providing a first gate biasing voltage and a second gate biasing voltage to the first memory cell and the second memory cell, boosting the absolute value of a channel voltage of the first memory cell to generate electron and hole pairs at the drain of the second memory cell through gate-induced drain leakage or band-to-band tunneling, and injecting the electron of the generated electron and hole pairs into the charge storage device of the first memory cell to program the first memory cell. | 07-02-2009 |
| 20090235365 | DATA ACCESS SYSTEM - A data access system includes a host and a storage device. The host has a security setup function and includes a first identity code storage block to store a first identity code. The storage device has a security check function and includes a second identity code storage block. The host executes the security setup function to set a second identity code according to the first identity code, and the second identity code is stored into the second identity code storage block. The storage device executes the security check function to determine if the host is allowed to access the storage device according to the first and second identity codes. | 09-17-2009 |
| 20090270071 | MOBILE PHONE ACCESSING SYSTEM AND RELATED STORAGE DEVICE - The present invention provides a mobile phone accessing system. The mobile phone accessing system comprises: a mobile phone having a first International Mobile Equipment Identity (IMEI) code; and a storage device comprising a first storage region for storing data, a second storage region for storing a second IMEI code, and a controller coupled to the first storage region and the second storage region for executing a security check function to determine whether the mobile phone is qualified to access the first storage region according to the first IMEI code. | 10-29-2009 |
| 20090270129 | MOBILE PHONE ACCESSING SYSTEM AND RELATED STORAGE DEVICE - The present invention provides a mobile phone accessing system. The mobile phone accessing system comprises: a mobile phone having a first Subscriber Identity Module (SIM) specification corresponding to a SIM card; and a storage device comprising a first storage region for storing data, a second storage region for storing a second SIM specification, and a controller coupled to the first storage region and the second storage region for executing a security check function to determine whether the mobile phone is qualified to access the first storage region according to the first SIM specification. | 10-29-2009 |
| 20090271585 | DATA ACCESSING SYSTEM AND RELATED STORAGE DEVICE - A data accessing system includes a host computer and a storage device. The host computer has a first media access control (MAC) address, and the storage device includes a first storage region, a second storage region, and a controller. The first storage region is utilized for storing data. The second storage region stores a second media access control address. The controller couples to the first storage region and the second storage region for executing a security checking function to determine if the host computer is qualified to access the first storage region according to the first media access control address. | 10-29-2009 |
| 20110051526 | METHOD FOR PROGRAMMING A MEMORY STRUCTURE - A memory structure includes a first memory cell and a second memory cell located at an identical bit line and adjacent to the first memory cell. Each memory cell includes a substrate, a source, a drain, a charge storage device, and a gate. A method for programming the memory structure includes respectively providing a first gate biasing voltage and a second gate biasing voltage to the gates of the first memory cell and the second memory cell, boosting an absolute value of a channel voltage of the first memory cell to generate electron and hole pairs at the drain of the second memory cell through gate-induced drain leakage or band-to-band tunneling, and injecting the hole of the generated electron and hole pairs into the charge storage device of the first memory cell to program the first memory cell. | 03-03-2011 |
