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Cheng-Hsien

Cheng-Hsien Chang, Taichung City TW

Patent application numberDescriptionPublished
20090230773Scanner with battery - Power is provided to a scanning device. Power supplied by an attached bus is used to power the scanning device when power requirements for the scanning device can be met by the power supplied by the attached bus. Power is drawn from a rechargeable battery to supply power to the scanning device when power requirements for the scanning device cannot be met by the power from the attached bus. When the scanning device is in a stand-by mode, the power from the attached bus is used to recharge the rechargeable battery.09-17-2009

Cheng-Hsien Cheng, Hsinchu TW

Patent application numberDescriptionPublished
20110079840MEMORY CELL AND MANUFACTURING METHOD THEREOF AND MEMORY STRUCTURE - A memory cell is provided. The memory cell includes a substrate, an isolation layer, a gate, a charge storage structure, a first source/drain region, a second source/drain region and a channel layer. The isolation layer is disposed over the substrate. The gate is disposed over the isolation layer. The charge storage structure is disposed over the isolation layer and the gate. The first source/drain region is disposed over the charge storage structure at two sides of the gate. The second source/drain region is disposed over the charge storage structure at top of the gate. The channel layer is disposed over the charge storage structure at sidewall of the gate and is electrically connected with the first source/drain region and the second source/drain region.04-07-2011

Cheng-Hsien Chou, Zhonghe City TW

Patent application numberDescriptionPublished
20110225816METHOD OF MANUFACTURING A MULTILAYER PRINTED CIRCUIT BOARD WITH A BUILT-IN ELECTRONIC DEVICE - A method of manufacturing a multilayer printed circuit board of a built-in electronic device provides a substrate having a copper clad laminate and a first dielectric layer. The first dielectric layer is laminated onto the copper clad laminate and has a cavity for accommodating the electronic device. A second dielectric layer is laminated onto the substrate and electronic device to produce a base circuit board with an embedded electronic device. A build-up circuit layer is formed on the base circuit board. The first and second dielectric layers are made of a plastic material.09-22-2011

Cheng-Hsien Chung, Taipei County TW

Patent application numberDescriptionPublished
20100311880MODIFIED LAYERED MATERIAL AND UNSATURATED POLYESTER NANOCOMPOSITE COMPRISING THE SAME - A modified layered material is provided, which includes a layered inorganic material intercalated with an organic modifier. The organic modifier includes12-09-2010
20120010360MODIFIED LAYERED MATERIAL AND UNSATURATED POLYESTER NANOCOMPOSITE COMPRISING THE SAME - A modified layered material is provided, which includes a layered inorganic material intercalated with an organic modifier. The organic modifier includes01-12-2012

Cheng-Hsien Hung, Hsinchi TW

Patent application numberDescriptionPublished
20090166872Memory Word lines with Interlaced Metal Layers - A memory device with improved word line structure is disclosed. The memory device includes a plurality of polysilicon strips substantially parallel to each other on the substrate, the plurality of polysilicon strips arranged in two interleaved groups of a first group and a second group. The memory device further includes a first layer of conductive strips forming a plurality of bit lines and a second layer of meal strips, the second layer of conductive strips overlying the polysilicon strips and coupled to the first group of polysilicon strips. In addition, the memory device includes a third layer of conductive strips forming one or more power line, and a fourth layer of metal strips, the fourth layer of conductive strips overlying the second layer of conductive strips and coupled to the second group of polysilicon strips to form a new word line structure having a low resistance.07-02-2009

Cheng-Hsien Lee, Xizhi City TW

Patent application numberDescriptionPublished
20110279927LOCKED WARNING APPARATUS USED FOR HANDLE OF HARD DISK DRIVE BRACKET - A locked warning apparatus used for a handle of a hard disk drive bracket is described. The locked warning apparatus includes a locking base, a locking device, an upper cover assembly, and a pressing unit. The locking base has a clasping portion and an elastic protrusion. The locking device has a blocking portion. The clasping portion of the locking base is fastened to the locking device in a form of line-surface interface contact. The blocking portion reciprocates a back and forth motion on the elastic protrusion of the locking base to allow the locking device to retain either a lock status or an unlock status correspondingly. When the locking device retains the lock status, the locking device buckles the upper cover assembly. When the locking device retains the unlock status, the upper cover assembly can be ejected from the locking base by pushing the pressing unit.11-17-2011

Cheng-Hsien Tsai, Yongkang City TW

Patent application numberDescriptionPublished
20110143313DENTAL IMPLANT DEVICE - A dental implant device is adapted for use in dental implant operations to engage the dental prosthesis. The dental implant device includes a hollow main body and an external thread. The hollow main body has top and bottom ends, an inner peripheral surface disposed between the top and bottom ends and defining a through hole extending through the top and bottom ends, and an outer peripheral surface disposed between the top and bottom ends and surrounding the inner peripheral surface. The external thread is provided on the outer peripheral surface of the main body.06-16-2011

Cheng-Hsien Wang, Lujhou City TW

Patent application numberDescriptionPublished
20110235847Sideways extending speaker apparatus and methods - Sideways-extending speaker apparatus and methods that include a speaker box that is adjustable to fit within given information handling system or electronic device chassis form factor constraints, while also being selectably extendable and expandable to provide increased speaker box volume to achieve improved sound quality performance both in terms of increased speaker spatial separation and wider dynamic range.09-29-2011

Cheng-Hsien Wu, Taipei City TW

Patent application numberDescriptionPublished
20120025201Inverted Trapezoidal Recess for Epitaxial Growth - A semiconductor device having an epitaxial layer a method of manufacture thereof is provided. The semiconductor device has a substrate with a trench formed therein and a recess formed below the trench. The recess has sidewalls with a (111) crystal orientation. The depth of the trench is such that the depth is greater than or equal to one-half a length of sidewalls of the recess. An epitaxial layer is formed in the recess and the trench. The depth of the trench is sufficient to cause dislocations formed between the interface of the semiconductor substrate and the epitaxial layer to terminate along sidewalls of the trench.02-02-2012

Cheng-Hsien Wu, Guanmiao Township TW

Patent application numberDescriptionPublished
20090189419Folding Chair - A folding chair includes two side boards, a foldable paper beehive structure, and a positioning device. The foldable paper beehive structure includes a plurality of paper boards interconnected with one another. The paper beehive structure includes two sides to which the side boards are mounted to form a chair body. A plurality of polygonal holes are formed between two paper boards adjacent to each other. The polygonal holes extend perpendicularly to a ground on which the paper beehive structure is placed. The positioning device is made of rigid material and coupled with the side boards when the paper beehive structure is in an extended state to fix a width of the chair body.07-30-2009

Cheng-Hsien Wu, Taipei TW

Patent application numberDescriptionPublished
20110117730Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers - A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.05-19-2011
20110180846Method for Forming Antimony-Based FETs Monolithically - An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.07-28-2011
20110304021Epitaxial Growth of III-V Compound Semiconductors on Silicon Surfaces - A device includes a silicon substrate, and a III-V compound semiconductor region over and contacting the silicon substrate. The III-V compound semiconductor region has a U shaped interface with the silicon substrate, with radii of the U shaped interface being smaller than about 1,000 nm.12-15-2011
20110306179MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates - A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° C.; and lowering a temperature of the silicon substrate from the first temperature to a second temperature. A temperature lowering rate during the step of lowering the temperature is greater than about 1° C./second. A III-V compound semiconductor region is epitaxially grown on a surface of the silicon substrate using metal organic chemical vapor deposition (MOCVD).12-15-2011

Cheng-Hsien Yang, Hsinchu TW

Patent application numberDescriptionPublished
20100014491SYSTEM AND METHOD FOR REINFORCING WIRELESS COMMUNICATION CAPABILITY WITHIN WIRELESS NETWORK GROUP - A method and system is provided to reinforce wireless communication capabilities between multiple network nodes of an wireless network group. The method and system first detects a wireless transmission capability between a first network node and a second network node. When the wireless transmission capability is lower than a threshold value, one set of reinforcing coordinates will be derived by introducing the first geographic information and the second geographic information. Afterwards, move a third network node to a position with the set of reinforcing coordinates to establish an alternative wireless transmission route between the first network note and second network node. Therefore, when an original wireless transmission route between any two network nodes is abnormal, the alternative wireless transmission route will be available in time and reduce the risks of losing transmission signals.01-21-2010
20100103841SYSTEM AND METHOD FOR WIRELESSLY CONNECTING DIVERSE AD-HOC NETWORK GROUPS - A wireless connection system and method are provided to connect diverse Ad-hoc network groups. A first Ad-hoc network group has a first network node and a first edge node wirelessly connecting with each other. The second Ad-hoc network group has a second network node and a second edge node wirelessly connecting with each other without connecting the first Ad-hoc network group. The first and second edge nodes have multiple wireless modules respectively. One of the wireless modules is used to connect wireless with other network nodes in the same Ad-hoc network group. The rest extra wireless module(s) is used to connect wirelessly with another extra wireless module(s) of the edge node(s) in different Ad-hoc network group(s). Therefore, the independent first and second Ad-hoc network groups are now capable of wirelessly connecting with each other.04-29-2010
20100103909DATA PACKET, SYSTEM AND METHOD FOR MULTIPLE NODES TRANSMITTING UNDER AD-HOC NETWORK ARCHITECTURE - A system and method are provided for multiple nodes to wirelessly transmit in an Ad-hoc network architecture. First of all, an integration module of the system integrates a multi-node transmission protocol into a reservation column of a data packet. Next, an initial node of the system transmits the integrated data packet. Afterwards, according to the multi-node transmission protocol, one or more bridge node of the system receives the integrated data packet transmitted from the initial node. And finally, according to the multi-node transmission protocol, a destination node of the system receives the integrated data packet transmitted from the bridge node. By means of the proposed system and method, data transmission between multiple nodes is achieved under the Ad-hoc network architecture.04-29-2010
20100189083WIRELESS LOCAL NETWORK RECONNECTING SYSTEM AND METHOD - A wireless local network reconnecting system and method is provided. The method detects a connection-lost signal generated when a network node of the wireless local network group lost connection. A reconnecting coordinate is calculated according to the connection-lost signal and transmitted to the connection-lost network node through an external communication network. Afterwards, the method guides the connection-lost network node to move to the reconnecting coordinate and reconnect with the wireless local network group wirelessly. Since the external communication network is used to connect with the connection-lost network node, the connection-lost network node is able to reconnect with the wireless local network group through the proposed method.07-29-2010