| Patent application number | Description | Published |
|---|
| 20080210167 | IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively. | 09-04-2008 |
| 20080258082 | Plasma Processing Method and Plasma Processing Apparatus - It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. | 10-23-2008 |
| 20090023262 | Method for fabricating semiconductor device - To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode ( | 01-22-2009 |
| 20090068769 | Method and Apparatus for Plasma Processing - An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. | 03-12-2009 |
| 20090104783 | Asher, Ashing Method and Impurity Doping Apparatus - To provide an asher, an ashing method and an impurity doping apparatus group which can detect the interface between a surface hardening layer of a resist and an internal nonhardening layer and the interface between the nonhardening layer and a semiconductor substrate, with a high throughput. | 04-23-2009 |
| 20090140174 | Impurity Introducing Apparatus and Impurity Introducing Method - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. | 06-04-2009 |
| 20090176355 | Plasma Doping Method and Plasma Processing Device - An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. | 07-09-2009 |
| 20090181526 | Plasma Doping Method and Apparatus - An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. | 07-16-2009 |
| 20090233383 | Plasma Doping Method and Apparatus - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 09-17-2009 |
| 20100009469 | PLASMA DOPING METHOD AND APPARATUS - During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate. | 01-14-2010 |
| 20100098837 | PLASMA DOPING METHOD AND APPARATUS - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 04-22-2010 |
