Patent application number | Description | Published |
20100323294 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise a multi cyclic lactone moiety. | 12-23-2010 |
20110039206 | NOVEL RESINS AND PHOTORESIST COMPOSITIONS COMPRISING SAME - Provided are new resins that comprise multi-ring, aromatic and/or multi-cyclic ester unit which preferably are photoacid-labile. Also provided are chemically-amplified positive photoresist that comprise such resins as well as multi-ring, aromatic and/or multi-cyclic ester monomers. | 02-17-2011 |
20110250537 | CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds. | 10-13-2011 |
20110250538 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided. | 10-13-2011 |
20110255061 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 10-20-2011 |
20120301823 | POLYMER COMPOSITION AND PHOTORESIST COMPRISING THE POLYMER - A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): | 11-29-2012 |
20130084525 | PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME - A photoacid generator compound has the formula (I): | 04-04-2013 |
20130137035 | SURFACE ACTIVE ADDITIVE AND PHOTORESIST COMPOSITION COMPRISING SAME - A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): | 05-30-2013 |
20130137038 | PHOTORESIST COMPOSITION - A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: | 05-30-2013 |
20130171429 | CYCLOALIPHATIC MONOMER, POLYMER COMPRISING THE SAME, AND PHOTORESIST COMPOSITION COMPRISING THE POLYMER - A monomer has the Formula I: | 07-04-2013 |
20130171549 | CYCLOALIPHATIC MONOMER, POLYMER COMPRISING THE SAME, AND PHOTORESIST COMPOSITION COMPRISING THE POLYMER - A monomer has the Formula I: | 07-04-2013 |
20130171567 | PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME - A photoacid generator includes those of formula (I): | 07-04-2013 |
20130171574 | PHOTORESIST PATTERN TRIMMING METHODS - Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices. | 07-04-2013 |
20130171825 | PHOTORESIST PATTERN TRIMMING METHODS - Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices. | 07-04-2013 |
20130244178 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT - New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer | 09-19-2013 |
20130344438 | PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE - A photoacid generator has the formula (I): | 12-26-2013 |
20130344439 | PHOTORESISTS COMPRISING AMIDE COMPONENT - New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer | 12-26-2013 |
20140065540 | PHOTORESIST AND COATED SUBSTRATE COMPRISING SAME - A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): | 03-06-2014 |
20140120469 | THERMAL ACID GENERATORS FOR USE IN PHOTORESIST - New photoresist compositions are provided that comprise a component that comprises a thermal acid generator and a quencher. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and at least one thermal acid generator and at least one quencher that can function to improve line width roughness and photospeed. | 05-01-2014 |
20140120470 | PHOTORESISTS COMPRISING IONIC COMPOUND - New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer. | 05-01-2014 |
20140120471 | PHOTOACID GENERATING COMPOUND AND PHOTORESIST COMPOSITION COMPRISING SAME, COATED ARTICLE COMPRISING THE PHOTORESIST AND METHOD OF MAKING AN ARTICLE - A compound having the formula (I): | 05-01-2014 |
20140186770 | DENDRITIC COMPOUNDS, PHOTORESIST COMPOSITIONS AND METHODS OF MAKING ELECTRONIC DEVICES - Dendritic compounds are provided. The dendritic compounds include an anionic dendron that has a focal point having an anionic group and a linking group, and a photoreactive cation. The dendritic compounds find particular use as photoacid generators. Also provided are photoresist compositions that include such a dendritic compound, as well as methods of forming electronic devices with the photoresist compositions. The dendritic compounds, photoresist compositions and methods find particular applicability in the manufacture of semiconductor devices. | 07-03-2014 |
20140186772 | PHOTORESIST PATTERN TRIMMING METHODS - Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices. | 07-03-2014 |
20140187027 | ION IMPLANTATION METHODS - Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices. | 07-03-2014 |
20140295347 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME - Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component. | 10-02-2014 |
20150056558 | PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME - A photoacid generator compound has the formula (I): | 02-26-2015 |
20150064612 | HARDMASK - This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions. | 03-05-2015 |
20150064620 | PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE - A photoacid generator compound has formula (1) | 03-05-2015 |
Patent application number | Description | Published |
20090117489 | Compositons and processes for immersion lithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 05-07-2009 |
20100173245 | Compositions comprising carboxy component and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing. | 07-08-2010 |
20100297549 | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 11-25-2010 |
20100297550 | Compositions comprising sulfonamide material and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 11-25-2010 |
20100304290 | Compositions and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second. | 12-02-2010 |
20110039210 | NOVEL RESINS AND PHOTORESIST COMPOSITIONS COMPRISING SAME - Provided are new resins that comprise lactone units and photoresist compositions that comprise such resins. | 02-17-2011 |
20110223535 | PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND - New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups. | 09-15-2011 |
20110250542 | SULFONYL PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds (“PAGs”) are provided as well as photoresist compositions that comprise such PAG compounds. | 10-13-2011 |
20110269070 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO | 11-03-2011 |
20110269074 | NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS - New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm. | 11-03-2011 |
20120122030 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 05-17-2012 |
20120129104 | LACTONE PHOTOACID GENERATORS AND RESINS AND PHOTORESISTS COMPRISING SAME - New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise such PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic devices | 05-24-2012 |
20120129108 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups. | 05-24-2012 |
20120156595 | COMPOSITIONS COMPRISING SUGAR COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sugar substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 06-21-2012 |
20120171626 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist. | 07-05-2012 |
20130065178 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 03-14-2013 |
20140356785 | PHOTORESISTS COMPRISING CARBAMATE COMPONENT - New photoresist compositions are provided that comprise a carbamate compound that comprises 1) a carbamate group and 2) an ester group. Preferred photoresists of the invention may comprise a resin with acid-labile groups; an acid generator compound; and a carbamate compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer. | 12-04-2014 |
20150044609 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 02-12-2015 |