Patent application number | Description | Published |
20130087823 | LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME - A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency. | 04-11-2013 |
20130146936 | LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME - A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than O. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency. | 06-13-2013 |
20130169167 | LIGHT DEVICES - An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis. | 07-04-2013 |
20140231851 | LIGHT EMITTING DIODE - A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode. | 08-21-2014 |
20140327025 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure. | 11-06-2014 |
20150061084 | SUBSTRATE, METHOD OF FABRICATING THE SAME, AND APPLICATION THE SAME - Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes. | 03-05-2015 |
20150108526 | LIGHT EMITTING DIODE - A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED. | 04-23-2015 |
20150108527 | LIGHT EMITTING DIODE - A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process. | 04-23-2015 |