Patent application number | Description | Published |
20080287360 | COMPOSITIONS AND METHODS FOR TREATING MALARIA WITH CUPREDOXIN AND CYTOCHROME - The present invention relates to cupredoxin and cytochrome and their use, separately or together, to inhibit the spread of parasitemia in mammalian red blood cells and other tissues infected by the malaria parasite, and in particular the parasitemia of human red blood cells by | 11-20-2008 |
20080293619 | COMPOSITIONS AND METHODS FOR TREATING MALARIA WITH CUPREDOXIN AND CYTOCHROME - The present invention relates to cupredoxin and cytochrome and their use, separately or together, to inhibit the spread of parasitemia in mammalian red blood cells and other tissues infected by the malaria parasite, and in particular the parasitemia of human red blood cells by | 11-27-2008 |
20080312413 | COMPOSITIONS AND METHODS FOR TREATING CONDITIONS RELATED TO EPHRIN SIGNALING WITH CUPREDOXINS - The present invention relates to compositions and methods of use of cupredoxins, and variants, derivatives and structural equivalents of cupredoxins that interfere with the ephrin signaling system in mammalian cells. Specifically, the invention relates to compositions and methods that use cupredoxins, such as azurin, rusticyanin and plastocyanin, and variants, derivatives and structural equivalents thereof to treat cancer in mammals. | 12-18-2008 |
20090191623 | COMPOSITIONS AND METHODS FOR TREATING HIV INFECTION WITH CUPREDOXIN AND CYTOCHROME C - The present invention relates to cupredoxin, specifically | 07-30-2009 |
20110070217 | COMPOSITIONS AND METHODS FOR TREATING HIV INFECTION WITH CUPREDOXIN AND CYTOCHROME C - The present invention relates to cupredoxin, specifically | 03-24-2011 |
Patent application number | Description | Published |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 09-23-2010 |
20110033969 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 02-10-2011 |
20120142536 | ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS - The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary. | 06-07-2012 |
20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
20130284258 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 10-31-2013 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140141601 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass. | 05-22-2014 |
20140206126 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 07-24-2014 |
20140242785 | SEMICONDUCTOR FILMS ON SAPPHIRE GLASS - A method is disclosed for growing large grain to single crystalline semiconductor films on inexpensive glass substrates. The method comprises deposition of semiconductor films from a eutectic melt on sapphire glass | 08-28-2014 |
20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |
20140338799 | EUTECTIC FUEL CELL - Eutectic fuel cells are prepared by depositing a metal-semiconductor eutectic alloy over non-platinum electrodes on a substrate. In some embodiments the electrodes are the same metal and in other cases the electrodes are dissimilar. | 11-20-2014 |
Patent application number | Description | Published |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 09-23-2010 |
20110033969 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 02-10-2011 |
20120142536 | ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS - The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary. | 06-07-2012 |
20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140141601 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass. | 05-22-2014 |
20140206126 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 07-24-2014 |
20140338799 | EUTECTIC FUEL CELL - Eutectic fuel cells are prepared by depositing a metal-semiconductor eutectic alloy over non-platinum electrodes on a substrate. In some embodiments the electrodes are the same metal and in other cases the electrodes are dissimilar. | 11-20-2014 |
Patent application number | Description | Published |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 09-23-2010 |
20110033969 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 02-10-2011 |
20120142536 | ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS - The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary. | 06-07-2012 |
20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
20130284258 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 10-31-2013 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140141601 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass. | 05-22-2014 |
20140206126 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 07-24-2014 |
20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |
20140338799 | EUTECTIC FUEL CELL - Eutectic fuel cells are prepared by depositing a metal-semiconductor eutectic alloy over non-platinum electrodes on a substrate. In some embodiments the electrodes are the same metal and in other cases the electrodes are dissimilar. | 11-20-2014 |
Patent application number | Description | Published |
20080295970 | SYSTEM AND METHOD OF TRANSFER PRINTING AN ORGANIC SEMICONDUCTOR - The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for producing a substrate having thereon a patterned small molecule organic semiconductor layer. The substrate having thereon a patterned small molecule organic semiconductor layer is produced by exposing a donor substrate having thereon a small molecule organic semiconductor layer to energy to cause the thermal transfer of a small organic molecule onto an acceptor substrate. | 12-04-2008 |
20090297774 | Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor, which are vapor deposited at a fixed temperature on relatively inexpensive buffered substrates, such as glass. Such films could have widespread application in photovoltaic and display technologies. | 12-03-2009 |
20090312529 | MOLECULAR MANIPULATOR, A METHOD OF MAKING THE SAME, AND A METHOD OF MOVING A NANOSTRUCTURE - A molecular manipulator includes a light-sensitive molecule, including a double bond, which changes a cis-trans configuration of the double bond in response to illumination by light of a selected wavelength, and a probe, for example, a probe of a scanned-proximity probe microscope, to which the light-sensitive molecule is attached. A method of making the molecular manipulator includes covalently bonding the light-sensitive molecule to the probe. A method of moving a nanostructure includes controllably grasping, moving, and releasing the nanostructure with the molecular manipulator. | 12-17-2009 |
20090313731 | MOLECULAR MANIPULATOR, A METHOD OF MAKING THE SAME, AND A METHOD OF MOVING A NANOSTRUCTURE - A molecular manipulator includes a light-sensitive molecule, including a double bond, which changes a cis-trans configuration of the double bond in response to illumination by light of a selected wavelength, and a probe, for example, a probe of a scanned-proximity probe microscope, to which the light-sensitive molecule is attached. A method of making the molecular manipulator includes covalently bonding the light-sensitive molecule to the probe. A method of moving a nanostructure includes controllably grasping, moving, and releasing the nanostructure with the molecular manipulator. | 12-17-2009 |
20090316096 | MULTI-DOMAIN AND IPS LIQUID-CRYSTAL DISPLAY USING DRY ALIGNMENT - The present invention includes a method of preparing a dry deposited liquid-crystal alignment layer using one of a mechanical mask, photo-resist, UV treatment, and ridge and fringe field methods. The present invention further provides a multi-domain, wide viewing angle liquid-crystal display, comprising: a bottom substrate; a first transparent conductive layer; a top substrate; a color filter layer; a second transparent conductive layer; a first dry deposited liquid-crystal alignment layer; a second dry deposited liquid-crystal alignment layer, the second dry deposited liquid-crystal alignment layer being spaced adjacent to and facing the first dry deposited liquid-crystal alignment layer; spacers; and a liquid-crystal material. Each of the first alignment layer and the second alignment layer is divided into a plurality of pixels each having a boundary and at least two domains and the domains of each of the multi-domain, dry deposited liquid-crystal alignment layers is obtained by a method selected from the group consisting of: a mechanical mask, photo-resist, UV treatment, and ridge and fringe field. The multi-domain, wide viewing angle liquid-crystal display of the present invention can be operated in the in-plane switching mode, which results in reduced image sticking. | 12-24-2009 |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 09-23-2010 |
20110033969 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 02-10-2011 |
20120142536 | ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS - The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary. | 06-07-2012 |
20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
20130284258 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 10-31-2013 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140141601 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass. | 05-22-2014 |
20140206126 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 07-24-2014 |
20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |
Patent application number | Description | Published |
20080255854 | SYSTEM AND METHOD USING BLIND CHANGE DETECTION FOR AUDIO SEGMENTATION - A system, method and computer program product for performing blind change detection audio segmentation that combines hypothesized boundaries from several segmentation algorithms to achieve the final segmentation of the audio stream. Automatic segmentation of the audio streams according to the system and method of the invention may be used for many applications like speech recognition, speaker recognition, audio data mining, online audio indexing, and information retrieval systems, where the actual boundaries of the audio segments are required. | 10-16-2008 |
20090043579 | TARGET SPECIFIC DATA FILTER TO SPEED PROCESSING - A method is presented which reduces data flow and thereby increases processing capacity while preserving a high level of accuracy in a distributed speech processing environment for speaker detection. The method and system of the present invention includes filtering out data based on a target speaker specific subset of labels using data filters. The method preserves accuracy and passes only a fraction of the data by optimizing target specific performance measures. Therefore, a high level of speaker recognition accuracy is maintained while utilizing existing processing capabilities. | 02-12-2009 |
20100191531 | QUANTIZING FEATURE VECTORS IN DECISION-MAKING APPLICATIONS - A system, method and computer program product for classification of an analog electrical signal using statistical models of training data. A technique is described to quantize the analog electrical signal in a manner which maximizes the compression of the signal while simultaneously minimizing the diminution in the ability to classify the compressed signal. These goals are achieved by utilizing a quantizer designed to minimize the loss in a power of the log-likelihood ratio. A further technique is described to enhance the quantization process by optimally allocating a number of bits for each dimension of the quantized feature vector subject to a maximum number of bits available across all dimensions. | 07-29-2010 |