Patent application number | Description | Published |
20100120252 | Method of Positioning Patterns from Block Copolymer Self-Assembly - A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer. | 05-13-2010 |
20110059299 | Method of Forming Self-Assembled Patterns Using Block Copolymers, and Articles Thereof - A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. | 03-10-2011 |
20120135146 | METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES - Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain. | 05-31-2012 |
20130099362 | METHOD OF FORMING SELF-ASSEMBLED PATTERNS USING BLOCK COPOLYMERS, AND ARTICLES THEREOF - A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices. | 04-25-2013 |
20140087089 | METHODS FOR HARDENING AMORPHOUS DIELECTRIC FILMS IN A MAGNETIC HEAD AND OTHER STRUCTURES - A method in one embodiment includes exposing a side of a dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of a dielectric layer to a crystalline state, wherein the side of the dielectric layer of extends between adjacent layers. Another method includes forming a dielectric overcoat on a media facing side of a plurality of thin films, the thin films having at least one transducer formed therein; and exposing at least a portion of the overcoat to a beam of charged particles for converting an amorphous component of the dielectric overcoat of the thin films to a crystalline state. Another method includes forming a thin film dielectric layer above a substrate; and exposing the dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of the dielectric layer to a crystalline state. | 03-27-2014 |
20150195916 | FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN - A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch. | 07-09-2015 |