| Patent application number | Description | Published |
|---|
| 20080213956 | FIELD EFFECT TRANSISTOR DEVICE INCLUDING AN ARRAY OF CHANNEL ELEMENTS - The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the distance between each of the channels present in the channel region is within a distance of no more than twice their width from each other. The FETs of the present invention are fabricated using methods in which self-assembled block copolymers are employed in forming the channel. | 09-04-2008 |
| 20090032959 | ELECTRICAL FUSES AND RESISTORS HAVING SUBLITHOGRAPHIC DIMENSIONS - Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a first set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors. | 02-05-2009 |
| 20090053129 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 02-26-2009 |
| 20090233236 | METHOD FOR FABRICATING SELF-ALIGNED NANOSTRUCTURE USING SELF-ASSEMBLY BLOCK COPOLYMERS, AND STRUCTURES FABRICATED THEREFROM - In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern. | 09-17-2009 |
| 20090297778 | METHODS FOR FORMING IMPROVED SELF-ASSEMBLED PATTERNS OF BLOCK COPOLYMERS - A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described. | 12-03-2009 |
| 20090311851 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material. | 12-17-2009 |
| 20100203295 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 08-12-2010 |
| 20100276731 | Inorganic Nanocrystal Bulk Heterojunctions - A bulk heterojunction comprising an intermixed blend of fully inorganic n- and p-type particles and its method of manufacture are described. The particles are preferably nanometer-scale, spherical-shaped particles known as nanocrystals which are assembled into a densely packed three-dimensional array. The nanocrystals are preferably fabricated from a photo-active material which, in combination with the nanocrystal shape and size, can be engineered to produce a bulk heterojunction with a specific absorption spectrum. The bulk heterojunction is preferably formed by dispersing a predetermined ratio of the desired n- and p-type nanocrystals in an organic solvent and employing low-cost solution processing techniques to deposit a film having the desired thickness, relative concentration of nanocrystal types, and degree of intermixing onto a substrate. When incorporated as the active layer in optoelectronic devices such solar cells, fully inorganic bulk heterojunctions offer significant improvements in performance while maintaining the low costs associated with organic processing techniques. | 11-04-2010 |
| 20100283121 | ELECTRICAL FUSES AND RESISTORS HAVING SUBLITHOGRAPHIC DIMENSIONS - Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a fist set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors. | 11-11-2010 |
| 20110129973 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material. | 06-02-2011 |
