| Patent application number | Description | Published |
|---|
| 20090114148 | METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS - A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method. | 05-07-2009 |
| 20090191339 | METAL CHLORIDE SEEDED GROWTH OF ELECTRONIC AND OPTICAL MATERIALS - A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal. | 07-30-2009 |
| 20100024719 | TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH - A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber. | 02-04-2010 |
| 20100303468 | White Light Emitting Device Based on Polariton Laser - A high-efficiency white-light-emitting device that includes a polariton light emitter that emits UV or blue light to a down-converting material that converts the polariton emissions to white light. The polariton light emitter includes an active region situated within a resonant optical cavity formed on a substrate. The down-converting material can comprise a luminophoric phosphor or other material. The polariton light and down-converting material can be arranged in a single apparatus to provide a white-light-emitting device that can be used for lighting and instrumentation. The device can also be configured for high-frequency modulation to provide optical signals for communications and control systems. | 12-02-2010 |
| 20100316342 | PHOTONIC CRYSTAL BASED OPTICAL MODULATOR INTEGRATED FOR USE IN ELECTRONIC CIRCUITS - A photonic crystal based optical modulator that is capable of being integrated with electronic circuits on a chip. An optical modulator is formed by using a substrate, an optical buffer layer, and optical waveguide layer and providing photonic crystal regions in the optical waveguide layer. Improved strength and durability of the optical modulator is achieved by using an electrode island to limit the suspended area to the minimum required by the photonic crystal waveguides. | 12-16-2010 |
| 20100327322 | Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control - High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region. | 12-30-2010 |
| 20110045281 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC - A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm | 02-24-2011 |
| 20110123425 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 05-26-2011 |
