Patent application number | Description | Published |
20100147453 | PEEL PLY MASKING DEVICE FOR AN ADHESIVE BONDED ATTACHMENT - A peel ply conformable masking device for protectively overlying a pre-cleaned bonding surface of an adhesive attachment adapted for bonded affixation to a selected substrate, such as an adhesive attachment of the type disclosed in U.S. Pat. Nos. 5,013,391 and 6,773,780 having a bonding surface circumscribing a temporary attachment member for holding the attachment against the substrate for the duration of a bonding agent cure time. The bonding surface of the adhesive attachment is pre-cleaned as by sand blasting and/or etching, and the masking device comprising a peel-off film carrying a thin layer of a peel-off adhesive is placed thereover to prevent contamination thereof. The masking device includes at least one aperture surrounding the temporary attachment member, and further includes at least one outwardly protruding and easily grasped pull tab for facilitated peel-off separation from bonding surface immediately prior to bonded affixation to the selected substrate. | 06-17-2010 |
20100314511 | LOW PROFILE ADHESIVE MOUNTED FIXTURE BUTTON - A low profile fixture button is provided for adhesive attachment to a substrate in a temporary or substantially permanent manner. The fixture button includes a plurality of preferably four over-center spokes substantially in a common plane and carrying a mounting plate having a pressure sensitive adhesive material thereon. The spokes are carried by an outer backstop rim, and are initially oriented with the mounting plate advanced toward the substrate. In a preferred form, the backstop rim seats within a counterbore formed in the rear side of a larger attachment adapted for low profile mounting onto the substrate. Pressing of the fixture button toward the substrate engages the advanced mounting plate with adhesive thereon with the substrate, and forces the spokes to displace over-center to a retracted position withdrawn substantially into the backstop rim and any associated larger attachment for low profile mounting onto the substrate. | 12-16-2010 |
20120217673 | SEALANT MOLD FIXTURE FOR A DOMED CAP - A sealant mold for sealing a domed nutplate unit particularly at a lower region about an adhesively attached interface with a substrate such as an aircraft fuel tank wall. The sealant mold is formed from a lightweight plastic material, and includes an inner cap in combination with an outer skirt to define a gap or trough for receiving and supporting a metered quantity of a curable sealant material. The mold is fitted onto a dome of the nutplate unit with an inner cap inboard edge landed onto a dome shoulder. The outer skirt is then displaced downwardly about the landed inner cap to extrude the sealant material about the lower region of the nutplate unit particularly such as the adhesively attached interface with the substrate. The sealant material is allowed to cure, after which the sealant mold can be stripped quickly and easily from the cured sealant material. | 08-30-2012 |
20120219380 | INSULATED AND SEALED CAP FOR A FASTENER COMPONENT - An insulated, sealed cap overlies and protects a fastener component or the like on a substrate in association with a substrate opening. The sealed cap includes an outer cap component filled partially with a selected sealant material and assembled with an inner collet sized and shaped to fit with a slip fit about the fastener component such as a nut or the like at one side of a selected substrate, such as the skin of an aircraft. An inboard edge of the inner collet seats on and substantially seals with the substrate. The outer cap component is then displaced toward the substrate to extrude the sealant material into a thin and substantially uniform layer joined with an extruded outer bead on the substrate, and then permitted to cure. Tapered ribs on the inner collet effectively lock with the outer cap component during sealant material curing and subsequently. | 08-30-2012 |
20130175730 | SEALANT MOLD FIXTURE FOR A DOME ELEMENT - A sealant mold for sealing a dome element particularly at a lower region about an interface with a substrate such as an aircraft fuel tank wall. The sealant mold is formed from a lightweight plastic material, and includes an outer cap portion having an opening formed therein, in combination with an integral outer skirt to define a gap or trough for receiving and supporting a metered quantity of a curable sealant material. The mold is slidably fitted onto a dome element with outer skirt displaced downwardly to extrude the sealant material about the lower region of the dome element. The sealant material is allowed to cure, after which the sealant mold can be stripped from the cured sealant material. | 07-11-2013 |
20160003281 | HOLLOW METAL SCREW AND METHOD OF MAKING - A hollow screw and related process of making is provided, wherein the hollow screw is formed from a generally circular corrosion resistant stainless steel disk cut from flat roll stock. The hollow screw includes a head and an elongated and hollow shaft having a wall thickness between about 0.2 to about 0.7 millimeters extending therefrom and defining a shank portion and a threaded portion having a plurality of threads thereon with a rotational drive mechanism configured to facilitate tightening via the threads. The process involves annealing to soften the stamped hollow screw, followed by thread rolling, and then age hardening the hollow screw. As such, the resultant hollow screw is relatively lightweight, about 50% the mass of a solid core screw made from the same material, with a sufficient thread strength to meet most aerospace applications and contributes to important aircraft fuel economy. | 01-07-2016 |
Patent application number | Description | Published |
20090277050 | Wear Assembly For Excavating Equipment - A wear assembly for excavating equipment includes a base fixed to the excavating equipment, a wear member fit over the base, and a lock to releasably hold the wear member to the base. The wear member includes side relief to reduce drag on the system. The wear member and the base each includes a hemispherical front end and a generally trapezoidal rear portion. The base includes a nose and a stop projecting from the nose to cooperate with the lock without an opening being needed to receive the lock into the nose. The lock is an elongate lock positioned generally in an axial direction and which holds the wear member to the base under compressive loads. | 11-12-2009 |
20110099861 | Wear Assembly For Excavating Equipment - A wear assembly for excavating equipment includes a base fixed to the excavating equipment, a wear member fit over the base, and a lock to releasably hold the wear member to the base. The wear member includes side relief to reduce drag on the system. The wear member and the base each includes a hemispherical front end and a generally trapezoidal rear portion. The base includes a nose and a stop projecting from the nose to cooperate with the lock without an opening being needed to receive the lock into the nose. The lock is an elongate lock positioned generally in an axial direction and which holds the wear member to the base under compressive loads. | 05-05-2011 |
20110232139 | WEAR ASSEMBLY FOR EXCAVATING EQUIPMENT - A wear assembly for excavating equipment includes a base fixed to the excavating equipment, a wear member fit over the base, and a lock to releasably hold the wear member to the base. The wear member includes side relief to reduce drag on the system. The wear member and the base each includes a hemispherical front end and a generally trapezoidal rear portion. The base includes a nose and a stop projecting from the nose to cooperate with the lock without an opening being needed to receive the lock into the nose. The lock is an elongate lock positioned generally in an axial direction and which holds the wear member to the base under compressive loads. | 09-29-2011 |
20120023788 | Wear Assembly For Excavating Equipment - A wear assembly for excavating equipment includes a base fixed to the excavating equipment, a wear member fit over the base, and a lock to releasably hold the wear member to the base. The wear member includes side relief to reduce drag on the system. The wear member and the base each includes a hemispherical front end and a generally trapezoidal rear portion. The base includes a nose and a stop projecting from the nose to cooperate with the lock without an opening being needed to receive the lock into the nose. The lock is an elongate lock positioned generally in an axial direction and which holds the wear member to the base under compressive loads. | 02-02-2012 |
20130227927 | Chain and Coupling Links - A coupling link for connecting two parts together includes link components (which each form a partial link) that are joined together with a removable support. The support and link components are coupled together to withstand high loads and/or adverse wear conditions. The inventive construction is strong, durable, efficient, cost effective and easy to use. Wear caps are provided to facilitate extended usable chain life. | 09-05-2013 |
20130318840 | LIP FOR EXCAVATING BUCKET - A lip for an excavating bucket with a front beam and a rear beam extending along the length of the lip and defining at least one recess between them. The front beam includes noses extending forward of the beam for mounting ground engaging tools. Ribs extend between the front beam and the rear beam. The ribs separate recesses extending between the beams. | 12-05-2013 |
20140165432 | Bucket For Cable Shovel - A bucket for use with a cable shovel includes a shell and a door collectively defining a cavity for gathering material to be excavated. The door is pivotally secured about a pivot axis on the shell so that the door can pivot between a closed position for gathering the material and an open position for dumping the material. The pivot axis is positioned forward of an exterior surface of a back wall of the shell to create a shallower and less forceful door swing during dumping. The door has a front portion that is bent towards a digging edge on the shell so that the door has greater strength, improves bucket loading, and moves a portion of the shell away from the highest wear area. | 06-19-2014 |
20150089848 | WEAR ASSEMBLY - A wear assembly with strain relief protects exposed surfaces of excavating equipment such as a bucket lip. Wear components may include a seat where loads are applied, welding flanges flanking the seat on opposite ends of the component welded to the equipment, and strain relief areas between each welding flange and the seat. The strain relief balances stresses from loading in the wear assembly across the weld flange to limit cracking from stress concentrations. Strain relief may include modification of material properties or modification of component configuration to reduce stiffness of the component between the weld flanges and the seat. | 04-02-2015 |
Patent application number | Description | Published |
20120203077 | Wearable Vital Signs Monitor - A method and monitor for monitoring vital signs. In one embodiment, the vital signs monitor includes a housing sized and shaped for fitting adjacent the ear of a wearer and an electronic module for measuring vital signs. The electronic module for measuring vital signs is located within the housing and includes a plurality of vital signs sensing modules in communication with a processor. The plurality of sensing modules includes at least two of the modules selected from the group of a ballistocardiographic (BCG) module, a photoplethysmographic (PPG) module, an accelerometer module, a temperature measurement module, and an electrocardiographic (ECG) module. In one embodiment, the processor calculates additional vital signs in response to signals from the plurality of vital signs sensing modules. | 08-09-2012 |
20130338460 | Wearable Device for Continuous Cardiac Monitoring - A physiological monitor for measuring a pulsatile motion signal (MoCG) that is delayed from, but at the same rate as, the heartbeat of a user. In one embodiment, the system includes a housing configured to be worn on the body of a user; at least one MoCG sensor, within the housing, that measures a pulsatile motion signal (MoCG) that is delayed from, but at the same rate as, the heartbeat of the user; and at least one data processor that calculates, solely based on an output of the at least one MoCG sensor, at least one of (i) heart rate (HR) and activity level for the user, and (ii) respiratory rate (RR), stroke volume (SV), and cardiac output (CO) for the user. In another embodiment, the at least one data processor is within the housing. | 12-19-2013 |
20140163386 | Circuit for Heartbeat Detection and Beat Timing Extraction - A circuit and method for long term electrocardiogram (ECG) monitoring is implemented with the goal of reducing power consumption, battery size, and consequently device size. In one embodiment, the integrated circuit includes an amplifier cell having a plurality of input terminals and an output terminal; a QRS amplifier cell in communication with the output of the amplifier cell; a baseline amplifier cell in communication with the output of the amplifier cell; a comparator cell having a first input terminal in communication with the output terminal of the QRS amplifier cell; and a V | 06-12-2014 |
20150087991 | APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH COLUMN-ROW-PARALLEL ARCHITECTURE FOR ULTRASONIC IMAGING - An ultrasonic imaging system is described in which a column-row-parallel architecture is provided at the circuit level of an ultrasonic transceiver. The ultrasonic imaging system can include a N×M array of transducer elements and a plurality of transceiver circuits where each transceiver circuit is connected to a corresponding one transducer element of the N×M array of transducer elements. A shared pulser gate driver and a shared VGA is provided for each row and column. Selection logic includes row select, column select, and per-element bit select. Through the column-row-parallel architecture, a variety of aperture configurations can be achieved. | 03-26-2015 |
20150230707 | BUFFERED BODY RETURN RECEIVER - Buffered body return receiver configurations are described. An amplifier for a receiver can be connected to two electrodes such that one of the two electrodes is connected to a non-inverting input of the amplifier and a second of the two electrodes is a driven node by being connected to both the inverting input of the amplifier and the output of the amplifier. The amplifier may be connected as a fully differential amplifier, a single-ended differential amplifier, a buffer, or an amplifier with a gain greater than 1, while still enabling improved channel gains with reduced power consumption at the transmitter from the signal source. The buffered body return receiver is suitable for scenarios in which a signal source is electrically independent of the power supply of the receiver's amplifier. | 08-20-2015 |
20150257708 | DIGITALLY ASSISTED ANALOG DYNAMIC RANGE ENHANCER - A circuit for expanding a dynamic range. In one embodiment, the circuit includes: a transducer generating a signal current on an output terminal in response to a physical quantity, the signal current comprising an AC current and a DC current; a dynamic range enhancement circuit having a digital control signal input terminal and producing a variable opposition current in response to a digital signal applied to the digital control signal input terminal; an amplifier; an analog to digital converter in electrical communication with the amplifier; and a digital feedback circuit in communication with the output terminal of the analog to digital converter and in electrical communication with the digital control signal input terminal of the dynamic range enhancement circuit, wherein the opposition current from the dynamic range enhancement circuit is set substantially equal to the DC current portion of the signal current from the transducer. | 09-17-2015 |
Patent application number | Description | Published |
20120314384 | LOW-STRESS TSV DESIGN USING CONDUCTIVE PARTICLES - A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via. | 12-13-2012 |
20130037925 | AREA ARRAY QFN - A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame. | 02-14-2013 |
20130049179 | LOW COST HYBRID HIGH DENSITY PACKAGE - A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate has contacts at a first surface and terminals at an opposed second surface that are electrically connected with the substrate contacts. The first microelectronic element has contacts exposed at its front face. The front face of the first microelectronic element is joined to the substrate contacts. The second microelectronic element overlies the first microelectronic element and has contacts at a front face facing away from the substrate. The lead frame has lead fingers, wherein the second surface of the substrate and the lead fingers define a common interface for electrical interconnection to a component external to the microelectronic assembly. | 02-28-2013 |
20130118784 | HIGH STRENGTH THROUGH-SUBSTRATE VIAS - A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter. | 05-16-2013 |
20130328186 | REDUCED STRESS TSV AND INTERPOSER STRUCTURES - A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface. A dielectric material can be exposed at the inner wall. The conductive via can define a relief channel within the opening adjacent the first surface. The relief channel can have an edge within a first distance from the inner wall in a direction of a plane parallel to and within five microns below the first surface, the first distance being the lesser of one micron and five percent of a maximum width of the opening in the plane. The edge can extend along the inner wall to span at least five percent of a circumference of the inner wall. | 12-12-2013 |
20140036454 | BVA INTERPOSER - A method for making an interposer includes forming a plurality of wire bonds bonded to one or more first surfaces of a first element. A dielectric encapsulation is formed contacting an edge surface of the wire bonds which separates adjacent wire bonds from one another. Further processing comprises removing at least portions of the first element, wherein the interposer has first and second opposite sides separated from one another by at least the encapsulation, and the interposer having first contacts and second contacts at the first and second opposite sides, respectively, for electrical connection with first and second components, respectively, the first contacts being electrically connected with the second contacts through the wire bonds. | 02-06-2014 |
20140054763 | THIN WAFER HANDLING AND KNOWN GOOD DIE TEST METHOD - A method of attaching a microelectronic element to a substrate can include aligning the substrate with a microelectronic element, the microelectronic element having a plurality of spaced-apart electrically conductive bumps each including a bond metal, and reflowing the bumps. The bumps can be exposed at a front surface of the microelectronic element. The substrate can have a plurality of spaced-apart recesses extending from a first surface thereof. The recesses can each have at least a portion of one or more inner surfaces that are non-wettable by the bond metal of which the bumps are formed. The reflowing of the bumps can be performed so that at least some of the bond metal of each bump liquefies and flows at least partially into one of the recesses and solidifies therein such that the reflowed bond material in at least some of the recesses mechanically engages the substrate. | 02-27-2014 |
20140070423 | TUNABLE COMPOSITE INTERPOSER - A composite interposer can include a substrate element and a support element. The substrate element can have first and second opposite surfaces defining a thickness of 200 microns or less, and can have a plurality of contacts exposed at the first surface and electrically conductive structure extending through the thickness. The support element can have a body of at least one of dielectric or semiconductor material exposed at a second surface of the support element, openings extending through a thickness of the body, conductive vias extending within at least some of the openings in a direction of the thickness of the body, and terminals exposed at a first surface of the support element. The second surface of the support element can be united with the second surface of the substrate element. The terminals can be electrically connected with the contacts through the conductive vias and the electrically conductive structure. | 03-13-2014 |
20140167267 | METHOD AND STRUCTURES FOR HEAT DISSIPATING INTERPOSERS - A method for making an interconnect element includes depositing a thermally conductive layer on an in-process unit. The in-process unit includes a semiconductor material layer defining a surface and edges surrounding the surface, a plurality of conductive elements, each conductive element having a first portion extending through the semiconductor material layer and a second portion extending from the surface of the semiconductor material layer. Dielectric coatings extend over at least the second portion of each conductive element. The thermally conductive layer is deposited on the in-process unit at a thickness of at least 10 microns so as to overlie a portion of the surface of the semiconductor material layer between the second portions of the conductive elements with the dielectric coatings positioned between the conductive elements and the thermally conductive layer. | 06-19-2014 |
20140179099 | METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING - Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects. | 06-26-2014 |
20140201994 | LOW-STRESS TSV DESIGN USING CONDUCTIVE PARTICLES - A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via. | 07-24-2014 |
20140217607 | REDUCED STRESS TSV AND INTERPOSER STRUCTURES - A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface. A dielectric material can be exposed at the inner wall. The conductive via can define a relief channel within the opening adjacent the first surface. The relief channel can have an edge within a first distance from the inner wall in a direction of a plane parallel to and within five microns below the first surface, the first distance being the lesser of one micron and five percent of a maximum width of the opening in the plane. The edge can extend along the inner wall to span at least five percent of a circumference of the inner wall. | 08-07-2014 |
20140240938 | CARRIER-LESS SILICON INTERPOSER - An interposer can have conductive elements at a first side and terminals at a second side opposite therefrom, for connecting with a microelectronic element and a second component, respectively. The component can include a first element having a thermal expansion coefficient less than 10 ppm/° C., and an insulating second element, with a plurality of openings extending from the second side through the second element towards the first element. Conductive structure extending through the openings in the second element and through the first element electrically connects the terminals with the conductive elements. | 08-28-2014 |
20140264794 | LOW CTE INTERPOSER WITHOUT TSV STRUCTURE - A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element. | 09-18-2014 |
20140339702 | METAL PVD-FREE CONDUCTING STRUCTURES - Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd). | 11-20-2014 |
20140376200 | RELIABLE DEVICE ASSEMBLY - Microelectronic assemblies and methods for making the same are disclosed herein. In one embodiment, a method of forming a microelectronic assembly comprises assembling first and second components to have first major surfaces of the first and second components facing one another and spaced apart from one another by a predetermined spacing, the first component having first and second oppositely-facing major surfaces, a first thickness extending in a first direction between the first and second major surfaces, and a plurality of first metal connection elements at the first major surface, the second component having a plurality of second metal connection elements at the first major surface of the second component; and plating a plurality of metal connector regions each connecting and extending continuously between a respective first connection element and a corresponding second connection element opposite the respective first connection element in the first direction. | 12-25-2014 |
20150014688 | Thin Wafer Handling and Known Good Die Test Method - A method of attaching a microelectronic element to a substrate can include aligning the substrate with a microelectronic element, the microelectronic element having a plurality of spaced-apart electrically conductive bumps each including a bond metal, and reflowing the bumps. The bumps can be exposed at a front surface of the microelectronic element. The substrate can have a plurality of spaced-apart recesses extending from a first surface thereof. The recesses can each have at least a portion of one or more inner surfaces that are non-wettable by the bond metal of which the bumps are formed. The reflowing of the bumps can be performed so that at least some of the bond metal of each bump liquefies and flows at least partially into one of the recesses and solidifies therein such that the reflowed bond material in at least some of the recesses mechanically engages the substrate. | 01-15-2015 |
20150044820 | METHOD OF FABRICATING LOW CTE INTERPOSER WITHOUT TSV STRUCTURE - A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element. | 02-12-2015 |
20150146393 | HIGH STRENGTH THROUGH-SUBSTRATE VIAS - A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter. | 05-28-2015 |
20150162216 | TUNABLE COMPOSITE INTERPOSER - A composite interposer can include a substrate element and a support element. The substrate element can have first and second opposite surfaces defining a thickness of 200 microns or less, and can have a plurality of contacts exposed at the first surface and electrically conductive structure extending through the thickness. The support element can have a body of at least one of dielectric or semiconductor material exposed at a second surface of the support element, openings extending through a thickness of the body, conductive vias extending within at least some of the openings in a direction of the thickness of the body, and terminals exposed at a first surface of the support element. The second surface of the support element can be united with the second surface of the substrate element. The terminals can be electrically connected with the contacts through the conductive vias and the electrically conductive structure. | 06-11-2015 |
20150162241 | METAL PVD-FREE CONDUCTING STRUCTURES - Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd). | 06-11-2015 |
20150187673 | REDUCED STRESS TSV AND INTERPOSER STRUCTURES - A microelectronic component with circuitry includes a substrate (possibly semiconductor) having an opening in a top surface. The circuitry includes a conductive via (possibly metal) in the opening. The opening has a first sidewall of a first material, and the conductive via has a second sidewall of a second material (possibly metal). At least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location. Between the meeting location and the top surface of the substrate, the first and second sidewalls are separated by a third material (possibly foam) which is a dielectric different from the first material. The third material lowers thermal stress in case of thermal expansion compared to a structure in which the third material were replaced with the second material. | 07-02-2015 |
20150255345 | METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING - Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects. | 09-10-2015 |
20150262902 | INTEGRATED CIRCUITS PROTECTED BY SUBSTRATES WITH CAVITIES, AND METHODS OF MANUFACTURE | 09-17-2015 |
20150262972 | INTEGRATED CIRCUIT ASSEMBLIES WITH REINFORCEMENT FRAMES, AND METHODS OF MANUFACTURE - An assembly with modules ( | 09-17-2015 |
20150270209 | STACKED DIE INTEGRATED CIRCUIT - An apparatus relates generally to an integrated circuit package. In such an apparatus, a package substrate has a first plurality of via structures extending from a lower surface of the package substrate to an upper surface of the package substrate. An die has a second plurality of via structures extending to a lower surface of the die. The lower surface of the die faces the upper surface of the package substrate in the integrated circuit package. The package substrate does not include a redistribution layer. The die and the package substrate are coupled to one another. | 09-24-2015 |
20150327367 | CIRCUIT ASSEMBLIES WITH MULTIPLE INTERPOSER SUBSTRATES, AND METHODS OF FABRICATION - A combined interposer ( | 11-12-2015 |
20150333049 | HOLDING OF INTERPOSERS AND OTHER MICROELECTRONIC WORKPIECES IN POSITION DURING ASSEMBLY AND OTHER PROCESSING - A workpiece ( | 11-19-2015 |
20150340310 | METHOD AND STRUCTURES FOR HEAT DISSIPATING INTERPOSERS - An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer. | 11-26-2015 |
20150348940 | STRUCTURE AND METHOD FOR INTEGRATED CIRCUITS PACKAGING WITH INCREASED DENSITY - A method of forming a semiconductor package comprises forming one or more first vias in a first side of a substrate and attaching a first side of a first microelectronic element to the first side of the substrate. The first microelectronic element is electrically coupled to at least one of the one or more first vias. The method further comprise obtaining a second microelectronic element including one or more second vias in a first side of the second microelectronic element, and attaching a second side of the substrate to the first side of the second microelectronic element. The second microelectronic element is electrically coupled to at least one of the one or more first vias. Each of one or more connecting elements has a first end attached to a first side of the second microelectronic element and a second end extends beyond a second side of the first microelectronic element. | 12-03-2015 |
20150357272 | INTEGRATED INTERPOSER SOLUTIONS FOR 2D AND 3D IC PACKAGING - An integrated circuit (IC) package includes a first substrate having a backside surface and a top surface with a cavity disposed therein. The cavity has a floor defining a front side surface. A plurality of first electroconductive contacts are disposed on the front side surface, and a plurality of second electroconductive contacts are disposed on the back side surface. A plurality of first electroconductive elements penetrate through the first substrate and couple selected ones of the first and second electroconductive contacts to each other. A first die containing an IC is electroconductively coupled to corresponding ones of the first electroconductive contacts. A second substrate has a bottom surface that is sealingly attached to the top surface of the first substrate, and a dielectric material is disposed in the cavity so as to encapsulate the first die. | 12-10-2015 |
20150371938 | BACK-END-OF-LINE STACK FOR A STACKED DEVICE - Apparatus relating generally to a back-end-of-line (“BEOL”) stack. In this apparatus, the BEOL stack is configured to electrically couple at least one first electrical component to at least one second electrical component. First contacts are provided on a first side of the BEOL stack with a first pitch for providing a bondable surface for connection to the at least one first electrical component. Second contacts are provided on a second side of the BEOL stack with a second pitch for providing another bondable surface for connection to the at least one second electrical component. The second pitch may be larger than the first pitch. | 12-24-2015 |