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Charbon
Christian Charbon, Chezard-St-Martin CH
| Patent application number | Description | Published |
|---|---|---|
| 20100320661 | THERMOCOMPENSATED SPRING AND METHOD FOR MANUFACTURING THE SAME - The invention relates to a method ( | 12-23-2010 |
Edoardo Charbon, Echandens CH
| Patent application number | Description | Published |
|---|---|---|
| 20100127160 | INTEGRATED CIRCUIT COMPRISING AN ARRAY OF SINGLE PHOTON AVALANCHE DIODES - Integrated circuit ( | 05-27-2010 |
| 20100208845 | INTEGRATED RECEIVING CIRCUIT AND METHOD FOR RADIOFREQUENCY AND HIGH SPEED SIGNALS - Integrated receiving circuit for radiofrequency signals an amplifying element using the multiplication zone of a reverse biased semiconductor junction operating in Geiger mode for amplifying an input radiofrequency signal (Vin) and converting it into a digital signal. And a digital part for digitally processing the digital signal. | 08-19-2010 |
| 20110037849 | TIME-OF-FLIGHT BASED IMAGING SYSTEM USING A DISPLAY AS ILLUMINATION SOURCE - The present invention concerns a time-of-flight based imaging system comprising a photon emitter used as an illumination source; a photon sensor ( | 02-17-2011 |
| 20110121421 | IMAGE SENSOR HAVING NONLINEAR RESPONSE - In previously known imaging devices as in still and motion cameras, for example, image sensor signal response typically is linear as a function of intensity of incident light. Desirably, however, akin to the response of the human eye, response is sought to be nonlinear and, more particularly, essentially logarithmic. Preferred nonlinearity is realized in image sensor devices of the invention upon severely limiting the number of pixel states, combined with clustering of pixels into what may be termed as super-pixels. | 05-26-2011 |
Edoardo Charbon, Cd Delft NL
| Patent application number | Description | Published |
|---|---|---|
| 20100133636 | SINGLE PHOTON DETECTOR AND ASSOCIATED METHODS FOR MAKING THE SAME - A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector. | 06-03-2010 |
Edoardo Charbon, Den Haag NL
| Patent application number | Description | Published |
|---|---|---|
| 20120075615 | PULSED LIGHT OPTICAL RANGEFINDER - An optical rangefinder based on time-of-flight measurement, radiates pulsed light toward an object ( | 03-29-2012 |