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Charalampos Pozidis

Charalampos Pozidis, Zurich CH

Patent application numberDescriptionPublished
20110051508MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY - A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.03-03-2011
20110069539PROGRAMMING MULTI-LEVEL PHASE CHANGE MEMORY CELLS - A method and a feedback controller for programming at least one multi-level phase-change memory cell with a programming signal. The method and feedback controller include a sequence of write pulses applied to the multi-level phase change memory cell, wherein the feedback controller adjusts in real time at least one parameter of each write pulse as a function of a determined resistance error of the phase-change memory cell with respect to a desired reference resistance level.03-24-2011
20110126329DEVICE COMPRISING A CANTILEVER AND SCANNING SYSTEM - A device including a first part and a second part, one of which is a cantilever, the first and second parts being connected to each other and movable relative to each other. The device includes a magnetic element arranged on the first part and configured to provide a magnetic field. The device further includes a magnetization device arranged on the second part and configured to provide an actuation magnetic field which interacts with the magnetic field of the magnetic element, thereby causing or suppressing relative movement of the first and second parts. A scanning system including such a device is also described.05-26-2011

Charalampos Pozidis, Thalwil CH

Patent application numberDescriptionPublished
20090080107METHOD OF CONTROLLING MOVEMENTS OF A POSITION OF A MICROSCANNER - The invention relates to a method of controlling movements of a positioner of a micro-scanner, the method comprising: determining the vibration resonance frequency ranges of the positioner, and performing a main scan by a controlled movement of the positioner.03-26-2009
20090319866ERASURE FLAGGING SYSTEM AND METHOD FOR ERRORS-AND-ERASURES DECODING IN STORAGE DEVICES - A system and method for erasure flagging for errors-and-erasures decoding in storage devices includes determining a deviation measure between a read/write head position relative to a track of symbols in storage media. A reliability value is determined for the symbols based on the deviation measure. Flagging the symbols with a reliability value below a threshold as erasures is performed. The symbols are decoded using errors-and-erasures decoding in an iterative procedure.12-24-2009
20100085056MAGNETO-RESISTANCE BASED TOPOGRAPHY SENSING - A topography sensor and method include a probe configured to traverse a surface to determine a topography. A stray magnetic field is disposed in proximity to the probe. A magneto-resistive sensor is configured so that the stray magnetic field passing through it changes in accordance with positional changes of the probe as the probe tip traverses the surface.04-08-2010
20100201289HIGH-SPEED ELECTROSTATIC ACTUATION OF MEMS-BASED DEVICES - A micro-electro mechanical device includes a first structure, a second structure offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position.08-12-2010
20110242884Programming at Least One Multi-Level Phase Change Memory Cell - A method of applying at least one programming pulse to the a PCM cell for programming the PCM cell to have a respective definite cell state, the definite cell state being defined by a definite resistance level using an annealing pulse or a melting pulse. The respective definite cell state represents two information entities, a step of applying a first reading pulse to the respective programmed PCM cell to provide a first resistance value, a step of applying at least a second reading pulse to the respective programmed PCM cell to provide a second resistance value, the first reading pulse and the second reading pulse being different pulses; and a step of determining the respective definite cell state of the respective programmed PCM cell dependent on the respective provided first resistance value and the respective provided second resistance value.10-06-2011
20110321202DYNAMIC MODE NANO-SCALE IMAGING AND POSITION CONTROL USING DEFLECTION SIGNAL DIRECT SAMPLING OF HIGHER MODE-ACTUATED MICROCANTILEVERS - An apparatus is provided and includes a cantilever having a tip at a distal end thereof disposed with the tip positioned an initial distance from a sample and a circuit electrically coupled to a substrate on which the sample is layered and the cantilever to simultaneously apply direct and alternating currents to deflect the cantilever and to cause the tip to oscillate about a point at a second distance from the sample, which is shorter than the initial distance, between first positions, at which the tip contacts the sample, and second positions, at which the tip is displaced from the sample.12-29-2011

Patent applications by Charalampos Pozidis, Thalwil CH

Charalampos Pozidis, Gattikon CH

Patent application numberDescriptionPublished
20080219134Method for Positioning a Scanning Probe on a Target Track of a Multi-Track Storage Medium, Storage Device, Scanning Device, and Storage Medium - A method for settling on a target track of a servo system in a storage device (09-11-2008
20080247300STORAGE DEVICE AND METHOD FOR SCANNING A STORAGE MEDIUM - A storage device and a method for scanning a storage medium. A storage medium for storing data in the form of marks is scanned by an array of probes for mark detecting purposes in a scanning mode. The storage medium has fields with each field to be scanned by an associated one of the probes. At least one of the fields has marks representing operational data for operating the scanning mode. Scanning parameters are computed from the operational data and the scanning mode is adjusted according to the computed parameters.10-09-2008
20080270061SYSTEM AND METHOD FOR SENSOR REPLICATION FOR ENSEMBLE AVERAGING IN MICRO-ELECTROMECHANICAL SYSTEM (MEMS) - A MEMs-based system (and method), includes a sensor array including at least two sensors providing a basis for ensemble averaging.10-30-2008
20080284365SERVO SYSTEM FOR A TWO-DIMENSIONAL MICRO-ELECTROMECHANICAL SYSTEM (MEMS)-BASED SCANNER AND METHOD THEREFOR - A servo control system micro-electromechanical systems (MEMS)-based motion control system (and method therefor), includes a motion generator having an inherent stiffness component.11-20-2008
20080304379Writing and Reading of Data in Probe-Based Data Storage Devices - Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method uses the concept of sub-arrays to provide variable-rate read/write operation. Input data blocks are received for writing to the A-field array, each input data block being writable in A/k12-11-2008

Patent applications by Charalampos Pozidis, Gattikon CH

Charalampos Pozidis, Thaiwil CH

Patent application numberDescriptionPublished
20110296274DATA ENCODING IN SOLID-STATE STORAGE DEVICES - Methods and apparatus are provided for recording input data in q-level cells of solid-state memory (2), where q>2. Input data words are encoded as respective codewords, each having a plurality of symbols. The coding scheme is such that each symbol can take one of q values corresponding to respective predetermined levels of the q-level cells, and each of the possible input data words is encoded as a codeword with a unique sequence of relative symbol values. The symbols of each codeword are then recorded in respective cells of the solid-state memory by setting each cell to the level corresponding to the recorded symbol value. Input data is thus effectively encoded in the relative positions of cell levels, providing resistance to certain effects of drift noise.12-01-2011

Charalampos Pozidis, Rueschlikon CH

Patent application numberDescriptionPublished
20120001142CARBON-BASED MEMORY ELEMENT - One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material.01-05-2012