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Chaparala, US

Murali Chaparala, Newton, MA US

Patent application numberDescriptionPublished
20110206839METHOD AND APPARATUS FOR FORMING STRUCTURES OF POLYMER NANOBEADS - The disclosure relates to providing printed structures of polymer that have substantially flat printed surfaces. In one embodiment, the disclosure relates to a post-printing treatment apparatus for receiving a substrate supporting a polymer printing thereon. The polymer can be PMMA or other suitable polymer. In a related embodiment, the polymer defines a thermoplastic polymer having a glass transition temperature. The apparatus can comprise of a chamber, and input manifold, an exhaust manifold, a solvent reservoir and a gas reservoir. The solvent reservoir provides one or more solvent systems adapted to chemically bind, and potentially react, with the polymer. The gas reservoir provides one or more gases for drying the substrate and printed polymer after the solvent treatment step. In one application, a substrate having printed surface thereon is placed in the chamber and exposed to the solvent system for sufficient period of time to provide substantially flat print surfaces.08-25-2011

Prasad Chaparala, Sunnyvale, CA US

Patent application numberDescriptionPublished
20090146192MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation - A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH06-11-2009
20100244128Configuration and fabrication of semiconductor structure using empty and filled wells - A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (09-30-2010
20100244148Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile - A gate dielectric layer (09-30-2010

Patent applications by Prasad Chaparala, Sunnyvale, CA US

Satish Chandra Chaparala, Painted Post, NY US

Patent application numberDescriptionPublished
20100129647Method of Weldbonding and a Device Comprising Weldbonded Components - A method of assembling optoelectronic and/or photonic components, said method comprising: (i) providing at least two optoelectronic and/or photonic components; (ii) aligning and situating these components relative to one another and in close proximity with one another so as to: (a) provide optical coupling between these components; and (b) maintain the distance d between the adjacent parts of these components, where d is 0 to 100 μm; (iii) adhering these components to one another with while maintaining optical coupling therebetween; and (iv) laser welding these components together while maintaining optical coupling therebetween.05-27-2010
20100265982Fracture Resistant Metallization Pattern For Semiconductor Lasers - Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.10-21-2010
20100303109Proximity Coupled Athermal Optical Package Comprising Laser Source And Compound Facet Wavelength Conversion Device - Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source and a wavelength conversion device. The laser source is positioned such that the output face of the laser source is proximity-coupled to a waveguide portion of the input face of the wavelength conversion device. The input face of the wavelength conversion device comprises an α-cut facet and β-cut facet. The α-cut facet of the input face is oriented at a horizontal angle α, relative to the waveguide of the wavelength conversion device to permit proximity coupling of the output face of the laser source and the input face of the wavelength conversion device. The β-cut facet of the input face is oriented at a horizontal angle β, relative to the waveguide of the wavelength conversion device to cooperate with the horizontal tilt angle of the device to reduce back reflections from the input face of the wavelength conversion device into the laser source. Additional embodiments are disclosed.12-02-2010
20100303110Edge Bonded Optical Packages - Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.12-02-2010
20110069929Methods for Passively Aligning Opto-Electronic Component Assemblies on Substrates - A method for aligning an opto-electronic component assembly (OECA) on a substrate includes positioning a substrate on an assembly surface and positioning an OECA on the substrate such that a first OECA alignment face projects from a first substrate alignment face. The substrate and the OECA are advanced towards a contact face of a first assembly alignment mechanism such that the first substrate alignment face contacts the contact face of the first assembly alignment mechanism after the first OECA alignment face contacts the contact face. The OECA is displaced relative to the first substrate alignment face when the first OECA alignment face contacts the contact face and the substrate continues to move towards the contact face thereby aligning the OECA on the substrate relative to the first substrate alignment face.03-24-2011
20110129189CLAD METAL SUBSTRATES IN OPTICAL PACKAGES - Embodiments of the present disclosure bring a wavelength conversion device into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser diode chip and a clad metal substrate. The clad metal substrate comprises a clad metal region that is mechanically coupled to a base metal region. The laser diode chip is coupled to the clad metal region. The clad metal region comprises a clad metal material having a thermal conductivity that is greater than a thermal conductivity of the base metal material. The clad metal region further comprises a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion of the base metal material and is greater than a coefficient of thermal expansion of the laser diode chip.06-02-2011
20110267682PROXIMITY COUPLED ATHERMAL OPTICAL PACKAGE COMPRISING LASER SOURCE AND COMPOUND FACET WAVELENGTH CONVERSION DEVICE - Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source and a wavelength conversion device. The laser source is positioned such that the output face of the laser source is proximity-coupled to a waveguide portion of the input face of the wavelength conversion device. The input face of the wavelength conversion device comprises an α-cut facet and β-cut facet. The α-cut facet of the input face is oriented at a horizontal angle α, relative to the waveguide of the wavelength conversion device to permit proximity coupling of the output face of the laser source and the input face of the wavelength conversion device. The β-cut facet of the input face is oriented at a horizontal angle β, relative to the waveguide of the wavelength conversion device to cooperate with the horizontal tilt angle of the device to reduce back reflections from the input face of the wavelength conversion device into the laser source. Additional embodiments are disclosed.11-03-2011

Sunitha Chaparala, South Weymouth, MA US

Patent application numberDescriptionPublished
20120109641METHOD, SYSTEM, AND APPARATUS FOR VALIDATION - In a method for validating data, a text of a document is received. At least one fact is extracted from the text. At least one expert refinement is merged with the at least one fact to create at least one modified fact. The at least one modified fact is provided for a review. An expert refinement to the at least one modified fact is captured in response to the review. A superset document based on the at least one pre-existing refinement and the expert refinement is stored.05-03-2012