Patent application number | Description | Published |
20110210444 | 3D Semiconductor Package Using An Interposer - A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die. | 09-01-2011 |
20120018877 | Package-on-Package Structures with Reduced Bump Bridging - A device includes a package substrate including a first non-reflowable metal bump extending over a top surface of the package substrate; a die over and bonded to the package substrate; and a package component over the die and bonded to the package substrate. The package component includes a second non-reflowable metal bump extending below a bottom surface of the package component. The package component is selected from the group consisting essentially of a device die, an additional package substrate, and combinations thereof. A solder bump bonds the first non-reflowable metal bump to the second non-reflowable metal bump. | 01-26-2012 |
20120061823 | SEMICONDUCTOR DEVICE HAVING PAD STRUCTURE WITH STRESS BUFFER LAYER - A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring. | 03-15-2012 |
20120235303 | REINFORCEMENT STRUCTURE FOR FLIP-CHIP PACKAGING - The present disclosure provides a carrier substrate, a device including the carrier substrate, and a method of bonding the carrier substrate to a chip. An exemplary device includes a carrier substrate having a chip region and a periphery region, and a chip bonded to the chip region of the carrier substrate. The carrier substrate includes a reinforcement structure embedded within the periphery region. | 09-20-2012 |
20130252378 | 3D Semiconductor Package Interposer with Die Cavity - A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die. | 09-26-2013 |
20130270686 | METHODS AND APPARATUS FOR HEAT SPREADER ON SILICON - Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump. | 10-17-2013 |
20150035139 | Copper Post Structure for Wafer Level Chip Scale Package - In a method for forming a packaging structure, a metal pad is formed on a semiconductor substrate, and a first polymer insulating layer is formed over the semiconductor substrate. An opening passing through the first polymer insulating layer is formed to expose a portion of the metal pad. A copper-containing material is deposited in the opening and over the first polymer insulating layer, thereby forming a copper-containing layer having a first thickness and a first width over the first polymer insulating layer. A conductive bump having a second width is formed over the copper-containing layer, in which the second width is smaller than the first width. An exposed portion of the copper-containing layer is etched using the conductive bump as a mask until the exposed portion is reduced to a second thickness, thereby forming a monolithic copper-containing structure. | 02-05-2015 |
20150228597 | COPPER POST STRUCTURE FOR WAFER LEVEL CHIP SCALE PACKAGE - In a method for forming a packaging structure, a metal pad is formed on a semiconductor substrate, and a first polymer insulating layer is formed over the semiconductor substrate. An opening passing through the first polymer insulating layer is formed to expose a portion of the metal pad. A copper-containing material is deposited in the opening and over the first polymer insulating layer, thereby forming a copper-containing layer having a first thickness and a first width over the first polymer insulating layer. A conductive bump having a second width is formed over the copper-containing layer, in which the second width is smaller than the first width. An exposed portion of the copper-containing layer is etched using the conductive bump as a mask until the exposed portion is reduced to a second thickness, thereby forming a monolithic copper-containing structure. | 08-13-2015 |