Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Chao-Sung
Chao-Sung Lai, Tao-Yuan TW
| Patent application number | Description | Published |
|---|---|---|
| 20100301399 | Sensitive field effect transistor apparatus - The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus. | 12-02-2010 |
Chao-Sung Lai, Taoyuan City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100044827 | Method for making a substrate structure comprising a film and substrate structure made by same method - A method for manufacturing a substrate structure comprising a film and a substrate structure made by this method are disclosed. The method for manufacturing a substrate structure comprising a film includes the steps of: providing a target substrate; providing an initial substrate; forming an embrittlement-layer on the initial substrate; forming a device layer on the embrittlement-layer; doping with hydrogen ions; bonding the device layer with the target substrate; and separating the device layer from the initial substrate. The hydrogen ions are added into the embrittlement-layer through doping, before an energy treatment is applied to embrittle and break the embrittlement-layer, thereby separating the device layer from the initial substrate. Since the hydrogen ions are added into the embrittlement-layer through doping, a crystal lattice structure of the device layer will not be damaged during the step of doping with hydrogen ions. | 02-25-2010 |
Chao-Sung Lai, Tao-Yuan City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100025778 | TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME - A transistor includes a gate structure of HfMoN. The work function of the gate structure can be modulated by doping the HfMoN with dopants including nitride, silicon or germanium. The gate structure of HfMoN of the present invention is applicable to PMOS, NMOS or CMOS transistors. | 02-04-2010 |
| 20100025815 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a metallic compound Hf | 02-04-2010 |
Chao-Sung Li, Miao-Li County TW
| Patent application number | Description | Published |
|---|---|---|
| 20100261119 | METHOD OF FABRICATING CAPACITIVE TOUCH PANEL - The present disclosure relates to a method of fabricating a capacitive touch pane where a plurality of groups of first conductive patterns are formed along a first direction, a plurality of groups of second conductive patterns are formed along a second direction, and a plurality of connection components are formed on a substrate. Each first conductive pattern is electrically connected to another adjacent first conductive pattern in the same group by each connection component and each group of the second conductive patterns is interlaced with and insulated from each group of the first conductive patterns. Next, a plurality of curved insulation mounds are formed to cover the first connection components. Then, a plurality of bridge components are formed to electrically connect each second conductive pattern with another adjacent second conductive pattern in the same group. | 10-14-2010 |