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Chao-Hsing
Chao-Hsing Chen, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110062456 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit. | 03-17-2011 |
| 20110241057 | HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad. | 10-06-2011 |
| 20120055532 | SEMICONDUCTOR OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate. | 03-08-2012 |
Chao-Hsing Chen US
| Patent application number | Description | Published |
|---|---|---|
| 20110062891 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit. | 03-17-2011 |
Chao-Hsing Chen, Tainan City TW
| Patent application number | Description | Published |
|---|---|---|
| 20120056212 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units. | 03-08-2012 |
Chao-Hsing Huang, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100085107 | Trim fuse circuit capable of disposing trim conducting pads on scribe lines of wafer - A trim fuse circuit includes a metal fuse, a trim pad coupled to the first end of the metal fuse, a first transistor coupled to the first end of the metal fuse, a second transistor coupled to the second end of the metal fuse, an inverter coupled to the second end of the metal fuse, a switch coupled to the second end of the metal fuse, and a common trim pad coupled to the control end of the switch. The inverter outputs a data signal according to the status of the metal fuse. The trim pad can be disposed on the scribe line of a wafer. When the trim pad is cut and accordingly connects to the substrate of the wafer, the data signal is not affected. | 04-08-2010 |
Chao-Hsing Lin, Taichung TW
| Patent application number | Description | Published |
|---|---|---|
| 20080255395 | Process for producing bis-alkoxylated diols of bisphenol a from spent polycarbonate discs(PC) or PC waste - This invention provides one-pot reaction for digesting polycarbonate waste with alkylene glycol in the presence of a basic catalyst at 180° C. under normal atmospheric pressure. The digested product mixture was found to consist of bisphenol A (BPA) and monoalkoxylated and bisalkoxylated diols of BPA. Alkoxylation of BPA and monoalkoxylated diols of BPA is performed by adding urea or urea derivative (or carbonic acid ester or amine ester) to the digested product mixture at a high temperature under normal atmospheric pressure to obtain the final product, i.e., bisalkoxylated diols of BPA in high yield. The bisalkoxylated diols of BPA may be used as raw materials to synthesize polymer such as polyurethane (PU) or polyester. | 10-16-2008 |