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Chao-Chun
Chao-Chun Chen, Kao-Hsiung City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080258178 | Method of forming a MOS transistor - A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO | 10-23-2008 |
| 20090101894 | METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS - A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region. | 04-23-2009 |
| 20100144110 | Method of forming a MOS transistor - A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO | 06-10-2010 |
| 20110159658 | METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS - A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100. | 06-30-2011 |
Chao-Chun Huang, Taoyuan County TW
| Patent application number | Description | Published |
|---|---|---|
| 20110038244 | WRITING METHOD FOR MULTILAYER OPTICAL DISC - A writing method for a multilayer optical disc. The method includes: measuring and recording optimum internal gains obtained when the objective lens is located on each inner side of the pick-up head, respectively, checking the writing direction based on the specific writing direction on each data layer of the disc, selecting the inner optimum internal gain when the writing direction is toward outside, and selecting the opposite inner optimum internal gain when the writing direction is toward inside to minimize the offset of the tracking error signal. | 02-17-2011 |
Chao-Chun Huang, Changhua TW
| Patent application number | Description | Published |
|---|---|---|
| 20080217798 | MOLD STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A mold structure and the manufacturing method thereof are disclosed. The mold structure is comprised of: an axle; a roller, axially ensheathing the axle; and a mold having a specific imprint pattern of microstructures formed thereon, being arranged to mount on the periphery of the roller while connecting to the axle; wherein a pulling force is exerted on the mold by the axle for stretching the mold while enabling the same to tensely adhere upon the periphery of the roller. | 09-11-2008 |
Chao-Chun Lin, Taipei Hsien TW
| Patent application number | Description | Published |
|---|---|---|
| 20090091888 | EMI SHIELDING AND HEAT DISSIPATING STRUCTURE - The present invention discloses an EMI shielding and heat dissipating structure for dissipating heat generated by a chip inside a portable electronic device. The EMI shielding and heat dissipating structure includes an EMI shielding housing for shielding the chip. A first opening is formed on the EMI shielding housing. The EMI shielding and heat dissipating structure further includes a thermal pad disposed on the chip, and an EMI shielding gasket installed on the EMI shielding housing. A second opening is formed on the EMI shielding gasket and located in a position corresponding to the first opening. The EMI shielding and heat dissipating structure further includes a heat-dissipating component installed on the EMI shielding gasket and connected to the thermal pad for dissipating the heat transmitted from the thermal pad. | 04-09-2009 |
Chao-Chun Wang, Fuqing City CN
| Patent application number | Description | Published |
|---|---|---|
| 20110095660 | Bright-Surface Structure and Display with Nut Suspended in Midair - A bright-surface structure with nut suspended in midair is provided. The bright-surface structure comprises a main body, at least one nut and at least one holder. The main body has a coupling region and at least one appearance surface with smooth and bright face. The nut is disposed at the side of the coupling region. The holder is disposed between said nut and said main body so that said nut can be firmly disposed on said coupling region by means of said holder. Whereby a screw will not approach said main body or said coupling region so that said appearance surface will not deform or wrinkle when said screw is locked into said nut. | 04-28-2011 |