Patent application number | Description | Published |
20080211552 | Controllable synchronous rectifier - The present controllable synchronous rectifier employs a Lus semiconductor to set synchronous rectification action in quadrant 1 of output characteristics of the conventional power MOSFETs. By controlling the voltage level of the gate-source voltage, the drain current can be controlled in the synchronous rectifier. Further, in combination with a protect opposite circuit to transfer a sinusoidal wave power supply or pulse power supply to a direct current power output, the synchronous rectifier is an indispensable high efficiency rectifier in the industry. | 09-04-2008 |
20080290405 | Power mosfet diode - A power MOSFET diode includes a plurality of unit elements, each of which has a gate and a drain that are connected to each other by the structure and the process of UMOS, VMOS, VDMOS, and etc., so as to integrate the unit elements into a PMD without any body diode of the traditional UMOS, VMOS, or VDMOS for providing a one-way electrical conductivity. The PMD is different from traditional diodes or Schottky diodes, because a forward bias is existed when the traditional diodes or Schottky diodes conduct the electricity on one-way. However, a drain-source on-state resistance (RDS) is used to replace the consumption of the forward bias when the PMD conducts the electricity on one-way. Due to the RDS of the PMD is lower and easy to be parallel connected to each other, the PMD can be used to substantially lower the power consumption and applied to various industries. | 11-27-2008 |
20110044081 | Full-wave rectifier - A full-wave rectifier of the present invention, has an input AC power source, a pair of input terminal A and B, a pair of first and second switching element Q | 02-24-2011 |
20110058394 | Single-Ended Forward Converter - A single-ended forward converter of the present invention, has first and second switching element comprises a pair Lus N-Channel FET, a first driving circuit comprises the series-connected circuit of the first voltage drop resistor and first zener diode for driving first Lus N-Channel FET, a second driving circuit comprises the series-connected circuit of the second voltage drop resistor and second zener diode for driving second Lus N-Channel FET. | 03-10-2011 |
20110080760 | Rectifier driving circuit - A rectifier driving circuit of the present invention, has a first driving element and a second driving element, switching element comprises a FET, a first driving element comprises the voltage drop resistor, a second driving element comprises the series-connected circuit of the diodes, the driving element for driving a FET, may be achieved rectify function. | 04-07-2011 |
20110095371 | Gate minimization threshold voltage of FET for synchronous rectification - A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage equal or over load voltage, can be achieve FET turn on, and gate minimization threshold voltage under load voltage, can be achieve FET turn off. | 04-28-2011 |
20110267138 | Synchronous rectifier circutits - This invention relates in Synchronous Rectifier Circuits, comprises: AC input terminal, switch, driving circuit, protect opposite current circuit and a load, to improved conventional Synchronous Rectifier Circuits, can be achieve rectify function. | 11-03-2011 |
20120007170 | High source to drain breakdown voltage vertical field effect transistors - An increase source to drain breakdown voltage vertical channel transistors device having a structure that is similar to that of a conventional metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate and a body. According the N+N− and P+P− junction theory of semiconductor, add to N− junction between the source N+ junction to P junction of N-Channel MOSFET; add to P− junction between the source P+ junction to n junction of P-Channel MOSFET; With the proposed MOSFET of which the source to drain breakdown voltage are increase may be achieved. | 01-12-2012 |
20130033311 | Cell interface - The invention related in cell interface is a circuit of diode D1 to D4, comprises: a first terminal connected to positive voltage terminal of first cell E1; a second terminal connected to positive voltage terminal of second cell E2; and a third terminal connected to external positive terminal VP, the external negative voltage terminal VN connected to negative voltage terminal of first cell E1 and second cell E2, can be not occur loop current in parallel circuit. | 02-07-2013 |
20130043538 | Switch - The switch in this invention is connected in series with two field effect transistor, comprises: the source S | 02-21-2013 |
20130076138 | Cell parallel device - The invention related in cell parallel device is a circuit of SCR S | 03-28-2013 |
20130241310 | Hall effect transformer - This invention relates is a Hall effect transformer, which include: Hall effect device, insulation layer and semiconductor, place the insulator layer between the Hall effect device and semiconductor used as an isolated, when AC current flow through the AC capacitors and Hall effect device, semiconductor corresponds to get both terminals of the AC voltage, and AC power transmission purposes. | 09-19-2013 |