Patent application number | Description | Published |
20100213536 | Nonvolatile Memory Device and Method of Forming the Same - A nonvolatile memory device includes a device isolation pattern, a charge trap layer, and a plurality of word lines. The device isolation pattern defines an active region in a semiconductor substrate and extends in a first direction. The charge trap layer covers the active region and the device isolation pattern. The word lines on the charge trap layer cross the active region and extend in a second direction. The charge trap layer disposed in a first region where the word line and the active region cross each other has a different nitrogen content ratio from the charge trap layer disposed in a second region surrounding the first region. | 08-26-2010 |
20110233648 | Three-Dimensional Semiconductor Memory Devices And Methods Of Fabricating The Same - Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns. | 09-29-2011 |
20120001345 | THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a three dimensional semiconductor device. The device may include mold layers vertically and sequentially stacked, a conductive pattern between the stacked mold layers, a plugging pattern vertically penetrating the stacked mold layers, an intermediate pattern between the conductive pattern and the plugging pattern, and protective layer patterns between the mold layers and the plugging pattern, wherein the protective layer patterns are separated by the intermediate pattern. | 01-05-2012 |
20120112264 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure. | 05-10-2012 |
20120135583 | METHODS OF MANUFACTURING THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES USING SUB-PLATES - A method of manufacturing a Three Dimensional (3D) semiconductor memory device can be provided by forming at least one trench in a plate stack structure to divide the plate stack structure into a plurality of sub-plate stack structures between forming a plurality of vertical active patterns in the plate stack structure and forming pads of a stepped structure from the plate stack structure. | 05-31-2012 |
20130044531 | SEMICONDUCTOR MEMORY DEVICES - A semiconductor memory device includes a stacked structure including a plurality of wordline structures sequentially stacked that each include: a plurality of wordlines with sidewalls and extending in a first direction on the substrate, and a connecting pad extending in a second direction on the substrate and being connected in common to the plurality of wordlines. A plurality of interconnections at a height over the substrate are connected to the connecting pads of the wordline structures, respectively. The device further includes bitlines substantially vertical to a top surface of the substrate and crossing one of the sidewalls of the plurality of wordlines, and memory elements between the bitlines and the plurality of wordlines, respectively. A length of the connecting pad in the second direction is substantially equal to a product of a minimum pitch between the interconnections and a stack number of one of the plurality of wordlines. | 02-21-2013 |
20130334593 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns. | 12-19-2013 |
20140021566 | MAGNETIC DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure. | 01-23-2014 |