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Changhyun
Changhyun Cho, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110107984 | ENGINE THAT IS PROVIDED WITH WATER PUMP - An engine that is equipped with a water pump, may include a pump housing that is mounted on one side of a cylinder block with an impeller rotatably mounted on a front side thereof to pump coolant, an inlet fitting that is mounted on the cylinder block at a predetermined distance from the pump housing such that the coolant flows through the inlet fitting, and a connecting body that integrally connects the pump housing with the inlet fitting to form one body. | 05-12-2011 |
Changhyun Han, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110275391 | MOBILE TERMINAL AND CONTROLLING METHOD THEREOF - A mobile terminal includes a display, a user input unit configured to receive a user command, and a wireless communication unit configured to wirelessly communicate with a first entity over a first communication path and to wirelessly communicate with any of a plurality of external devices, each comprising a display, over a second communication path. The first communication path typically utilizes a different communication protocol than the second communication path. The mobile terminal also includes a controller configured to execute a first application, detect an event relating to a second application, and responsive to the detecting of the event, automatically search for external devices, which are among the plurality of external devices, that are available for communication with the mobile terminal over the second communication path. | 11-10-2011 |
Changhyun Kim, Gyoungsangbuk-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090009432 | PLASMA DISPLAY PANEL - A plasma display panel is disclosed. The plasma display panel includes a front substrate, a scan electrode and a sustain electrode positioned parallel to each other on the front substrate, an upper dielectric layer positioned on the scan electrode and the sustain electrode, a rear substrate positioned to be opposite to the front substrate, and a barrier rib that is positioned between the front and rear substrates and partitions a discharge cell. The upper dielectric layer includes a glass-based material and a cobalt (Co)-based material as a pigment. The barrier rib includes lead (Ph) equal to or less than 1,000 ppm (parts per million). | 01-08-2009 |
Changhyun Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110058093 | AUTO FOCUSING METHOD USING VCM ACTUATOR - The present disclosure relates to an auto focusing method using a VCM (voice coil motor) actuator, the method of using the VCM actuator to upwardly move a lens position, to obtain a most-focused upward position value, and downwardly move the lens position to automatically adjust the lens focus, the method comprising: obtaining an auto focus (AF) upward position value, which is an upward position value of a lens when the lens is most focused by upwardly moving the lens to capture an image; determining whether a difference between the AF upward position value and an AF downward position value of a code value which is a bit value corresponding to the AF upward position value is smaller than a pre-set level; and implementing the auto focusing the code value if the difference is smaller than the pre-set level, and using a hysteresis table of the VCM actuator to select a code value corresponding to a downward position value most approximate to the AF upward position value in a downward position value column and to implement the auto focusing adjustment using the corrected code value, if the difference is not smaller than the pre-set level. | 03-10-2011 |
Changhyun Kwon, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110067684 | COOKER - The present invention relates to a cooker. In the present invention, the exhaust gas of the upper cooking chamber flows into the upper duct and discharged to the outside of the cooker and the exhaust gas of the lower cooking chamber sequentially flows into the lower duct, the upper duct and discharged to the outside of the cooker, and the exhaust gas of the upper and lower cooking chamber is discharged to the outside of the cooker alone or in a mixed state thereof. Therefore, in the present invention, the exhaust gas generated during cooking foods in the upper cooking chamber and the lower chamber may be discharged by a simpler configuration. | 03-24-2011 |
Changhyun Lee, Hwasung-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20120098051 | NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME - A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded. | 04-26-2012 |
Changhyun Lee, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100072559 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations. | 03-25-2010 |
| 20100214844 | Memory system and programming method thereof - Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage. | 08-26-2010 |
| 20110199829 | Nonvolatile Memory Device, Programming Method Thereof And Memory System Including The Same - Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method applies a first voltage to a selected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be programmed, applies a second voltage to an unselected bit line connected to at least two memory strings in same column including a memory cell of the plurality of memory cell to be program-prohibited, applies a third voltage to a selected string selection line connected to at least two memory strings in same row, applies a fourth voltage to an unselected string selection line connected to at least two memory strings in same row, and applies a program operation voltage to a plurality of word lines, each word line connected to each corresponding memory cell in the memory string, wherein the first to third voltages are positive voltages. | 08-18-2011 |
| 20120003800 | Methods of Forming Nonvolatile Memory Devices Having Vertically Integrated Nonvolatile Memory Cell Sub-Strings Therein and Nonvolatile Memory Devices Formed Thereby - Methods of forming nonvolatile memory devices according to embodiments of the invention include techniques to form highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series. | 01-05-2012 |
| 20120068247 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - Provided are three-dimensional semiconductor devices. The devices may include gap-fill insulating patterns configured to upwardly extend from a substrate and an electrode structure defined by sidewalls of the gap-fill insulating patterns. Vertical structures may be provided between adjacent ones of the gap-fill insulating patterns to penetrate the electrode structure, and the vertical structures may include first and second rows of the vertical structures. A separation pattern may be provided between the first and second rows of vertical structures and include a separation semiconductor layer. The separation pattern extends along a direction parallel to the first and second rows of vertical structures. | 03-22-2012 |
| 20120068255 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess is provided, which extends partially (or completely) through the common source region. A vertical stack of nonvolatile memory cells are provided on the substrate. This vertical stack of nonvolatile memory cells includes a vertical stack of spaced-apart gate electrodes and a vertical active region, which extends on sidewalls of the vertical stack of spaced-apart gate electrodes and on a sidewall of the recess. Gate dielectric layers are provided, which extend between respective ones of the vertical stack of spaced-apart gate electrodes and the vertical active region. The gate dielectric layers may include a composite of a tunnel insulating layer, a charge storage layer, a relatively high bandgap barrier dielectric layer and a blocking insulating layer having a relatively high dielectric strength. | 03-22-2012 |
| 20120081958 | NONVOLATILE MEMORY DEVICES AND METHODS FORMING THE SAME - Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other. | 04-05-2012 |
| 20120081959 | MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF - Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage. | 04-05-2012 |
Changhyun Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100124119 | Nonvolatile Memory Device and Read Methods Thereof - An object of the present inventive concept is providing a nonvolatile memory device having improved reliability by compensating a threshold voltage of a flash memory cell. | 05-20-2010 |
| 20100128531 | NONVOLATILE NAND-TYPE MEMORY DEVICES INCLUDING CHARGE STORAGE LAYERS CONNECTED TO INSULATING LAYERS - A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed. | 05-27-2010 |
Changhyun Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110132124 | TRANSMISSION SHIFTING APPARATUS FOR VEHICLE - A transmission shifting apparatus of a vehicle, may include a shifter movably installed along at least two straight paths which meet at one point each other, respectively, wherein at least two fixed points are arranged adjacent each other in at least one of straight paths, in which the shifter maintains a position thereof unless an external force is applied thereto, wherein the straight path having the at least two fixed points has a structure extending outward both sides of the at least two fixed points, and wherein one of the at least two fixed points in the straight path is formed to meet the other straight path of the at least two straight paths. | 06-09-2011 |
Changhyun Park, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100161545 | DATA INTEGRATION APPARATUS AND METHOD - Provided are a data integration apparatus and method using a weight factor. The data integration apparatus receives sensing information from at least one sensing device, the sensing information including a value indicating the existence of signals and confidence estimated parameters indicating the degree of confidence for the value indicating the existence of signals, and then generates the weighting factor based on the confidence estimated parameters. Then, the value indicating the existence of signals and the weighting factor are used to produce characteristic values of each sensing device and to finally determine the existence of signals. | 06-24-2010 |
| 20100240407 | Method and System for Managing Channel Set for Dynamic Channel Allocation - Provided are a method and an apparatus for managing a channel set in a cognitive radio (CR) communication system. A CR communication system for dynamically allocating frequencies or channels manages vacant channels regularly so as to set an appropriate priority to usage of the vacant channels such that a channel set can be managed efficiently. | 09-23-2010 |
Changhyun Park, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100205234 | METHOD AND APPARATUS FOR DETECTING SIGNAL USING CYCLO-STATIONARY CHARACTERISITICS - A method and apparatus for detecting a signal using a cyclo-stationary characteristic value is provided. A method of detecting a signal using a cyclo-stationary characteristic value includes: calculating cyclo-stationary characteristic values with respect to a cyclic frequency domain of an input signal; multiplying the calculated cyclo-stationary characteristic values with each other; and detecting the signal from the input signal based on the result of the multiplication. | 08-12-2010 |
| 20110014935 | APPARATUS AND METHOD FOR SCHEDULING SENSING CHANNEL IN WIRELESS COMMUNICATION SYSTEM - Provided is an apparatus and method for scheduling a sensing channel in a wireless communication system. The sensing channel scheduling apparatus may include: an evaluation value calculator to calculate evaluation values with respect to a channel quality for each of channels; a sorter to sort the evaluation values based on a predetermined criterion; and a scheduler to perform scheduling for sequences of the channels using sequences of the sorted evaluation values. | 01-20-2011 |
| 20110045862 | APPARATUS AND METHOD FOR COMMUNICATION IN COGNITIVE RADIO NETWORK - A CR apparatus for performing communication in a CR network includes: a communication unit configured to measure a channel estimation signal, transmit measured channel state information to a master device, and, when a QP of a reference channel arrives, make a communication channel transition to a candidate channel and perform communication; and a channel information management unit configured to receive and manage the channel state information measured by the communication unit and channel information comprising a candidate channel, into which a channel transition is to be made during a QP of the reference channel, received from the master device and control channel transition of the communication unit based on the channel information. | 02-24-2011 |