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Chang-Yueh Chan, Taichung TW

Chang-Yueh Chan, Taichung TW

Patent application numberDescriptionPublished
20080197438Sensor semiconductor device and manufacturing method thereof - This invention discloses a sensor semiconductor device and a manufacturing method thereof, including: providing a wafer having a plurality of sensor chips, forming a plurality of grooves between bond pads on active surfaces of the adjacent sensor chips; forming conductive traces in the grooves for electrically connecting the bond pads; mounting a transparent medium on the wafer for covering sensing areas of the sensor chips; thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces; cutting the wafer to separate the sensor chips; mounting the sensor chips on a substrate module having a plurality of substrates, electrically connecting the conductive traces to the substrates; providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and cutting the substrate module to separate a plurality of resultant sensor semiconductor devices.08-21-2008
20080203511Sensor-type semiconductor package and method for fabricating the same - The present invention provides a sensor-type semiconductor package and a method for fabricating the same. The method includes the steps of: providing a wafer having a plurality of sensor chips for mounting the wafer on a carrier board having an insulation layer, a plurality of conductive traces, and a substrate; forming a plurality of grooves among the solder pads on the active surfaces of the adjacent sensor chips, so as to expose the conductive traces and form a metal layer in the grooves, to electrically connect to the solder pads on the active surfaces of the adjacent sensor chips and the conductive traces; disposing a transparent medium on the wafer to cover the sensing areas of the sensor chips; removing the substrate, so as to expose the conductive traces and the insulation layer; and cutting the sensor chips along the borders to form a plurality of sensor-type semiconductor packages. This can avoid the formation of slanted grooves on the non-active surface on the wafer and shift in position of the grooves due to failure to align with the cutting lines among the sensor chips, as observed in prior art. Consequently, the problems such as stress concentration and cracking are likely to occur in the contact points of the traces formed in the slanted grooves and the traces in the active surfaces.08-28-2008
20080237767Sensor-type semiconductor device and manufacturing method thereof - A sensor-type semiconductor device and manufacturing method thereof are disclosed. The method includes providing a wafer comprising a plurality of sensor chips; forming concave grooves between the solder pads formed on the active surface of adjacent sensor chips; filling a filling material into the concave grooves and forming first conductive circuits electrically connecting the solder pads of adjacent sensor chips; mounting a light permeable body on the active surface of the wafer and thinning the non-active surface of the wafer to expose the filling material; mounting the wafer on a carrier board with second conductive circuits formed thereon corresponding in position to the filling material; forming first openings by cutting the light permeable body and the wafer to a position at which the second conductive circuits are located; forming metallic layers in the first openings by electroplating, the metallic layers electrically connecting the first and second conductive circuits of adjacent sensor chips; forming second openings by cutting the metallic layers to break the first conductive circuit connections and the second conductive circuit connections of adjacent sensor chips and meanwhile keep the first and second conductive circuits of each sensor chip still electrically connected through the metallic layers; filling a dielectric material into the second openings and removing the carrier board; and separating each of the sensor chips to form a plurality of sensor-type semiconductor devices. The invention overcomes the drawbacks of the prior art such as slanting notches formed on the non-active surface of the wafer, displacement of the notches due to the difficulty in precise alignment, as well as broken joints caused by concentrated stress generated in the slanting notches and exposed circuits.10-02-2008
20080283982Multi-chip semiconductor device having leads and method for fabricating the same - The present invention proposes a multi-chip semiconductor device having leads and a method for fabricating the same. The method includes the steps of: providing a substrate having a plurality of connection pads disposed on a surface thereof; mounting a plurality of semiconductor chips on the surface of the substrate, and electrically connecting the semiconductor chips to the surface of the substrate; forming an encapsulant on the substrate to encapsulate the semiconductor chips and expose the connection pads to form a package unit; and providing a lead frame having a plurality of leads, and electrically connecting the connection pads exposed from the package unit to the leads of the lead frame to form a multi-chip semiconductor device having leads, thereby forming a multi-chip semiconductor device having leads. By the multi-chip semiconductor device and the method for fabricating the same as proposed in the present invention, problems like poor reliability caused by stress induced by several types of materials in a semiconductor package into which a substrate and leads are integrated, moisture absorption by an encapsulated substrate, and cracks developed as a result of moisture absorption by the substrate can be avoided.11-20-2008
20080296716Sensor semiconductor device and manufacturing method thereof - A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.12-04-2008
20080303111Sensor package and method for fabricating the same - The invention discloses a sensor package and a method for fabricating the same. The sensor package includes: a substrate with an opening; a sensor chip disposed in the opening and electrically connected to the substrate; an encapsulant filling spacing between the sensor chip and the opening so as to secure the sensor chip to the substrate; and a transparent cover attached to the substrate via an adhesive layer, wherein the adhesive layer covers the sensor chip and bonding wires and is formed with an opening for exposing sensor region of the sensor chip. Securing the sensor chip in the opening of the substrate reduces the height of the sensor package, and meanwhile the process cost is reduced by eliminating the need of formation of conductive bumps on the sensor chip or the transparent cover and eliminating the need of specially designed substrate.12-11-2008
20090039488Semiconductor package and method for fabricating the same - A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier is greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.02-12-2009
20090039527Sensor-type package and method for fabricating the same - A sensor-type package and a method for fabricating the same are provided. A wafer having a plurality of semiconductor chips is provided, wherein a plurality of holes are formed on a first surface of each of the semiconductor chips, and a plurality of metallic pillars formed in the holes and a plurality of bond pads connected to the metallic pillars form through silicon vias (TSVs). A groove is formed on a second surface of each of the semiconductor chips to expose the metallic pillars. A plurality of sensor chips having TSVs are stacked in the grooves of the semiconductor chips and electrically connected to the exposed metallic pillars. A transparent cover is mounted onto the second surfaces of the semiconductor chips to cover the grooves. A plurality of conductive components are implanted on the bond pads of the semiconductor chips. The wafer is cut along borders among the semiconductor chips.02-12-2009
20090057799Sensor semiconductor device and method for fabricating the same - A sensor semiconductor device and a method for fabricating the same are provided. At least one sensor chip is mounted and electrically connected to a lead frame. A first and a second encapsulation molding processes are sequentially performed to form a transparent encapsulant for encapsulating the sensor chip and a part of the lead frame and to form a light-impervious encapsulant for encapsulating the transparent encapsulant. The transparent encapsulant has a light-pervious portion formed at a position corresponding to and above a sensor zone of the sensor chip. The light-pervious portion is exposed from the light-impervious encapsulant. Light may penetrate the light-pervious portion, without using an additional cover board, thereby reducing manufacturing steps and costs. The above arrangement avoids prior-art problems of poor reliability caused by a porous encapsulant and poor signal reception caused by interference of ambient light entering into a conventional chip only encapsulated by a transparent encapsulant.03-05-2009
20090166831SENSOR SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME - This invention provides a sensor semiconductor package and a method for fabricating the same. The method includes: mounting on a substrate a sensor chip having a sensor area; electrically connecting the sensor chip and the substrate by means of bonding wires; forming on a transparent member an adhesive layer with an opening corresponding in position to the sensor area; and mounting the transparent member on the substrate via the adhesive layer while heating the substrate, such that the adhesive layer melts, to thereby encapsulate the periphery of the sensor chip and the bonding wires while exposing the sensor area from the adhesive layer. Thus, the sensor area is sealed by the transparent member cooperative with the adhesive layer, making the sensor semiconductor package thus-obtained dam-free, light, thin, and compact, and incurs low process costs. Also, the product reliability is enhanced since the bonding wires are encapsulated by the adhesive layer without severing concern.07-02-2009
20110156180PACKAGE STRUCTURE HAVING MICRO-ELECTROMECHANICAL ELEMENT AND FABRICATION METHOD THEREOF - Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.06-30-2011

Patent applications by Chang-Yueh Chan, Taichung TW