Patent application number | Description | Published |
20080223906 | SOLDERING STRUCTURE AND METHOD USING ZN - A soldering structure using Zn includes a bonding layer which contains Zn; and a lead-free solder which bonds and reacts to the bonding layer. The bonding layer can be a Zn alloy layer or a multilayer including a Zn layer. Accordingly, the characteristics of the soldering structure can be improved by involving the high reactive Zn to the interfacial reaction of the soldering. | 09-18-2008 |
20080252712 | IMAGE FORMING ELEMENT AND FABRICATING METHOD THEREOF, AND IMAGE FORMING APPARATUS HAVING THE IMAGE FORMING ELEMENT - An image forming element includes a drum body including a plurality of conductive layers and a plurality of insulating layers stacked on one another in an alternate pattern, in which a portion of each of the conductive layers extends towards a cavity defined within the conductive layers to form a plurality of electrodes, and a control unit disposed in the cavity, and including a plurality of electrode pads corresponding to the electrodes to provide an electrical connection to the respective electrodes. Structure and processes to fabricate an image forming element are simplified, and fabricating cost can be reduced. | 10-16-2008 |
20080292814 | IMAGE FORMING ELEMENT AND FABRICATING METHOD THEREOF, AND IMAGE FORMING APPARATUS - An image forming element, a fabricating method of the image forming element, and an image forming apparatus having the image forming element is provided. The image forming element includes a drum body, a driving circuit mounted within the drum body, a support plate which penetrates through the drum body longitudinally along the drum body, the support plate being coupled to the driving circuit, an insulating layer formed on at least one portion of an outer circumference of the drum body, a conductive polymer layer formed on the insulating layer, the conductive polymer layer including one or more conductive areas and one or more insulating areas, which are aligned in an alternating pattern, and a protective layer formed on the conductive polymer layer, wherein the conductive areas on the conductive polymer layer are electrically connected to the driving circuit. Therefore, an image forming element can be provided in which a conductive layer is formed so that conductive areas and insulating areas are patterned without stepped portions therebetween, simplifying the fabricating process and improving the precision. | 11-27-2008 |
20090142712 | METHOD OF MANUFACTURING IMAGE FORMING ELEMENT, IMAGE FORMING ELEMENT, AND IMAGE FORMING APPARATUS HAVING THE SAME - A method of manufacturing an image forming element which can reduce a manufacturing time and a manufacturing cost with a simplified manufacturing process, an image forming element manufactured by the method, and an image forming apparatus having the same. The method includes preparing a cylindrical image drum having at least one slot formed along a lengthwise direction, arranging a control board having a plurality of terminals inside the image drum such that the plurality of terminals are located in the slot, forming a photosensitive resin layer on an outer circumference of the image drum, processing the photosensitive resin layer to form a plurality of installation recesses along a circumference of the image drum in correspondence to the plurality of terminals and a plurality of connection holes to expose the terminals through an area of each of the installation recesses, and forming a plurality of ring electrodes in the installation recesses to connect to the plurality of terminals through the connection holes. | 06-04-2009 |
20090273909 | FLEXIBLE DEVICE, FLEXIBLE PRESSURE SENSOR, AND FABRICATION METHOD THEREOF - A flexible device, a flexible pressure sensor, and a fabrication method thereof. The present flexible device includes: a first flexible substrate formed of a flexible material to have a flexibility; an active element formed to have a predetermined thickness and a flexibility, and being attached on the first flexible substrate; and a second flexible substrate formed of a flexible material to have a flexibility, and being deposited on the active element. The flexible device and the flexible pressure sensor have a high flexibility, so that they may be applied for a medical treatment such as implantation to a living body, a human body and so forth. In addition, the flexible device has a high flexibility, so that it may be inserted to a curved surface, which contributes to remove the limit of space where the semiconductor package device may be inserted. | 11-05-2009 |
20100171797 | PIEZOELECTRIC INKJET PRINTHEAD - A piezoelectric inkjet printhead includes a manifold, a chamber array including a plurality of chambers in connection with the manifold and arranged along at least one side of the manifold, a vibrating plate to cover the plurality of chambers, and a plurality of piezoelectric actuators formed on the vibrating plate to change pressures of corresponding ones of the plurality of chambers by vibrating the vibrating plate. The plurality of chambers includes a plurality of pressure chambers disposed in a center portion of the chamber array and having corresponding ink ejecting nozzles, and at least two dummy chambers, one disposed on each side of the chamber array and having corresponding dummy nozzles that do not eject ink. A plurality of trenches may be formed in the vibrating plate between each of the piezoelectric actuators. | 07-08-2010 |
20100194828 | INKJET PRINTHEAD HAVING PIEZOELECTRIC ACTUATOR AND METHOD OF DRIVING THE PIEZOELECTRIC ACTUATOR - An inkjet printhead and a method of driving the inkjet printhead include a flow channel substrate having a pressure chamber, and a piezoelectric actuator formed on the flow channel substrate to apply a driving force to the pressure chamber to eject ink. The piezoelectric actuator includes a piezoelectric layer formed on the flow channel substrate to correspond to the pressure chamber, and a plurality of common electrodes and a plurality of driving electrodes alternately arranged in a length direction of the piezoelectric layer. | 08-05-2010 |
20110003412 | LED PACKAGE STRUCTURE AND MANUFACTURING METHOD, AND LED ARRAY MODULE - An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED. | 01-06-2011 |
20110175132 | LED PACKAGE AND FABRICATION METHOD THEREOF - An LED package and a fabrication method thereof are provided. The LED package includes an upper metal plate having an LED-receiving hole therein; a lower metal plate disposed under the upper metal plate; and an insulator which the upper metal plate and the lower metal plate from each other. A portion of the lower metal plate is exposed via the LED-receiving hole and an LED is mounted on the exposed portion of the lower metal plate and is electrically connected to both of the upper and lower metal plates. A protective cover encloses and protects exposed surfaces of the upper and lower metal plates. | 07-21-2011 |
20130050802 | ELECTROWETTING DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths. | 02-28-2013 |
20130075632 | SUPERHYDROPHOBIC ELECTROMAGNETIC FIELD SHIELDING MATERIAL AND METHOD OF PREPARING THE SAME - A superhydrophobic electromagnetic field shielding material includes a curable resin and a carbon material, the superhydrophobic electromagnetic field shielding material including at least two depression patterns on an exposed surface. The at least two depression patterns may include a first depression pattern including a plurality of grooves having a same shape and a second depression pattern including a plurality of grooves having a same shape. The carbon material may be about 3 wt % to about 20 wt % based on the total weight of the superhydrophobic electromagnetic field shielding material. | 03-28-2013 |
20130193411 | GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed. | 08-01-2013 |
20130193412 | TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer. | 08-01-2013 |
20130252410 | SELECTIVE LOW-TEMPERATURE OHMIC CONTACT FORMATION METHOD FOR GROUP III-NITRIDE HETEROJUNCTION STRUCTURED DEVICE - A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region. | 09-26-2013 |
20140030857 | GRAPHENE DEVICE MANUFACTURING APPARATUS AND GRAPHENE DEVICE MANUFACTURING METHOD USING THE APPARATUS - A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged. | 01-30-2014 |
20140110717 | STRUCTURE INCLUDING GALLIUM NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING THE GALLIUM NITRIDE SUBSTRATE - A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer. | 04-24-2014 |
20140117349 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING METAL OXIDE - A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer. | 05-01-2014 |
20140162053 | BONDED SUBSTRATE STRUCTURE USING SILOXANE-BASED MONOMER AND METHOD OF MANUFACTURING THE SAME - A bonded substrate structure includes a siloxane-based monomer layer between a first substrate and a second substrate, the siloxane-based monomer layer bonding the first substrate and the second substrate. The first substrate and the second substrate may be one of a silicon substrate and a silicon oxide substrate, respectively. | 06-12-2014 |
20140174640 | METHODS OF TRANSFERRING GRAPHENE AND MANUFACTURING DEVICE USING THE SAME - A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer. | 06-26-2014 |
20140242782 | METHODS OF TRANSFERRING SEMICONDUCTOR ELEMENTS AND MANUFACTURING SEMICONDUCTOR DEVICES - The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements. | 08-28-2014 |
20140299231 | METAL-BASED SOLDER COMPOSITE INCLUDING CONDUCTIVE SELF-HEALING MATERIALS - A solder composite is provided. The solder composite may include: a metal-based solder matrix, a capsule dispersed in the solder matrix, and a self-healing material that is encapsulated in the capsule. The self-healing material may be configured to react with the solder matrix when in contact with the solder matrix such that at least one of an electrically conductive intermetallic compound and an electrically conductive alloy is formed. | 10-09-2014 |
20140335681 | GRAPHENE TRANSFERRING METHODS, DEVICE MANUFACTURING METHOD USING THE SAME, AND SUBSTRATE STRUCTURES INCLUDING GRAPHENE - Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate. | 11-13-2014 |