| Patent application number | Description | Published |
|---|
| 20080312088 | Field effect transistor, logic circuit including the same and methods of manufacturing the same - Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other. | 12-18-2008 |
| 20090020399 | Electromechanical switch and method of manufacturing the same - Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene. | 01-22-2009 |
| 20090032795 | Schottky diode and memory device including the same - A Schottky diode and a memory device including the same are provided. The Schottky diode includes a first metal layer and an Nb-oxide layer formed on the first metal layer. | 02-05-2009 |
| 20090073859 | Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same - Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions. | 03-19-2009 |
| 20090130492 | Information storage devices using magnetic domain wall movement and methods of manufacturing the same - Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants. | 05-21-2009 |
| 20090250752 | Methods of fabricating semiconductor device having a metal gate pattern - A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H | 10-08-2009 |
| 20120032138 | LIGHT-EMITTING DEVICE HAVING ENHANCED LUMINESCENCE BY USING SURFACE PLASMON RESONANCE AND METHOD OF FABRICATING THE SAME - A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode. | 02-09-2012 |
