| Patent application number | Description | Published |
|---|
| 20080224206 | METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) INCLUDING RECESSED CHANNEL REGIONS AND METHODS OF FABRICATING THE SAME - Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided. | 09-18-2008 |
| 20090215238 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH ENLARGED RECESSED GATE ELECTRODES - A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed. | 08-27-2009 |
| 20100207170 | IMAGE SENSOR HAVING 3-DIMENSIONAL TRANSFER TRANSISTOR AND ITS METHOD OF MANUFACTURE - In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion. | 08-19-2010 |
| 20110025632 | MOBILE COMMUNICATION TERMINAL AND METHOD OF SELECTING MENU AND ITEM - A method of controlling a mobile terminal, and which includes allowing, via a wireless communication unit on the mobile terminal, wireless communication with at least one other terminal; displaying, on a first side of a touch screen display of the mobile terminal, a sound icon indicating whether or not a sound is output by the mobile terminal; receiving, via a controller, a touching selection signal indicating a touching of the sound icon; displaying, on the touch screen display, a first indicator corresponding to the sound icon on a second side of the touch screen display and separated from the sound icon, said first indicator indicating a direction in which a touch and drag operation should occur to turn off the sound output by the mobile terminal; receiving, via the controller, a touch and drag selection signal indicating a dragging operation along a vector from the sound icon toward an intersection with the first indicator; and turning off, via the controller, the sound output by the mobile terminal after receiving the touch and drag signal indicating the dragging operation and before the first indicator is touched. The present invention also provides a corresponding mobile terminal. | 02-03-2011 |
| 20110079831 | Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions - Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided. | 04-07-2011 |
| 20110111570 | METHODS OF FABRICATING NON-VOLATILE MEMORY DEVICES INCLUDING DOUBLE DIFFUSED JUNCTION REGIONS - A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed. | 05-12-2011 |
