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| 20120173311 | AUTOMATIC TELLER MACHINE FOR PROVIDING SERVICE USING TWO-DIMENSIONAL BARCODE AND METHOD FOR OPERATING AUTOMATIC TELLER MACHINE - An automatic teller machine (ATM) providing a service using a two-dimensional (2D) barcode and an operation method thereof may be provided. The ATM may include a scanning unit to scan a 2D barcode from a mobile terminal in response to a request for a transaction request, and a processor to determine a requested financial transaction from the scanned 2D barcode, and to provide a display unit with a service screen supporting the determined financial transaction. | 07-05-2012 |
| 20130030999 | METHOD AND APPARATUS FOR SELECTING DENOMINATIONS IN AN AUTOMATED TELLER MACHINE - A method of selecting denominations in an automated teller machine (ATM) may be provided. The method may include receiving a request for withdrawal from a user, displaying, on a touch screen, symbols corresponding to a plurality of denominations including a first denomination and a second denomination that constitute a withdrawal amount of the user, and a number of banknotes of each of the plurality of denominations, in response to the reception of the request, sensing a touch-based movement gesture from the first denomination to the second denomination, updating a number of banknotes of the first denomination and a number of banknotes of the second denomination, in response to the sensing of the touch-based movement gesture, and displaying, on the touch screen, the updated number of banknotes of the first denomination and the updated number of banknotes of the second denomination along with the symbols corresponding to the plurality of denominations. | 01-31-2013 |
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| 20110220860 | Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same - Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures. | 09-15-2011 |
| 20110310652 | Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices - Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state | 12-22-2011 |
| 20120018695 | Non-Volatile Memory Element And Memory Device Including The Same - Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level. | 01-26-2012 |
| 20120032132 | Nonvolatile Memory Elements And Memory Devices Including The Same - Nonvolatile memory elements may include a first electrode, a second electrode, a first buffer layer, a second buffer layer and a memory layer. The memory layer may be between the first and second electrodes. The first butter layer may be between the memory layer and the first electrode. The second buffer layer may be between the memory layer and the second electrode. The memory layer may be a multi-layer structure including a first material layer and a second material layer. The first material layer may include a first metal oxide which is of the same group as, or a different group from, a second metal oxide included in the second material layer. | 02-09-2012 |
| 20120161821 | VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE - A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device. | 06-28-2012 |
| 20120230080 | Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device - According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device. | 09-13-2012 |
| 20120319076 | MULTI-BIT MEMORY ELEMENTS, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME - In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer. | 12-20-2012 |
| 20130043451 | Nonvolatile Memory Elements And Memory Devices Including The Same - Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer. | 02-21-2013 |
| 20130051125 | METHOD OF OPERATING SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE DEVICE - According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device. | 02-28-2013 |
| 20130051164 | NONVOLATILE MEMORY DEVICES AND METHODS OF DRIVING THE SAME - A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell. | 02-28-2013 |
| 20130058153 | SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE ELEMENTS AND METHODS OF OPERATING SEMICONDUCTOR DEVICES - In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current. | 03-07-2013 |
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| 20080244835 | Apparatus and method for machine washing - Disclosed is an apparatus and method for machine washing that includes a sterilizer capable of continuously exhibiting antibiotic and sterilization functions during washing and rinsing processes and reducing the consumption amount of Ag. The washing machine comprises a water reservoir to contain washing water, a sterilizer sterilizing the washing water through an electrolysis process, and a circulator circulating the washing water in the sterilizer. | 10-09-2008 |
| 20090028725 | Hermetic compressor - A hermetic compressor for adjusting the length and cross sectional area of a communication path as a refrigerant flow passage, so as to attenuate a discharge pulsation and consequently, a vibration and noise thereof. The hermetic compressor, which includes a cylinder head having a discharge chamber to discharge a compressed refrigerant and a discharge muffler to receive the refrigerant discharged from the discharge chamber, further includes a communication path to communicate the discharge chamber and the discharge muffler with each other, so as to allow the refrigerant to flow from the discharge chamber into the discharge muffler, and an auxiliary communication tube to increase a length of the communication path for increasing a refrigerant flow distance. The auxiliary communication path reduces the cross sectional area of a refrigerant flow passage while increasing a refrigerant flow distance, thereby attenuating a low-frequency component of the discharge pulsation. | 01-29-2009 |
| 20090218227 | DEIONIZATION APPARATUS AND METHOD OF MANUFACTURING THE SAME - A capacitive deionization apparatus, wherein a spacing distance between electrodes of cells is uniformly maintained and a flow in the cells is optimized to improve efficiency of the deionization apparatus and contact resistance between a carbon material and a collector is reduce to improve electrical conductivity, is disclosed. The capacitive deionization apparatus which includes a plurality of electrode modules, each having a collector and electrodes disposed on upper and lower surfaces of the collector to electrically and chemically remove ions from liquid, includes a plurality of plates made of a stiff material are alternately stacked with the electrode modules such that the electrode modules are spaced at specific intervals, wherein the collector and the electrodes are pressed by a pair of adjacent plates among the plurality of plates to maintain a contact therebetween. | 09-03-2009 |
| 20100058816 | Drum type washing machine - Disclosed herein is a drum type washing machine including a body, a tub arranged in the body, and a drum rotatably installed in the tub, and an inner surface of a rear wall of the has a flat portion along a rotating direction of the drum. | 03-11-2010 |
| 20110041352 | Clothes dryer - A clothes dryer having a preheating unit preheating drawn air is provided. The clothes dryer includes a main body, a drying tub rotatably mounted to receive an object to be dried, and a hot air duct supplying hot air into the drying tub. The hot air duct includes a heating unit heating drawn air, and a hot air supply unit connecting the heating unit with the drying tub, thereby forming a path for heated air. The heating unit includes a first heating unit having a heater part generating heat, and a second heating unit surrounding an entrance and outer walls of the first heating unit, thereby forming a path for the air flowing to the first heating unit. The second heating unit includes one or more preheating fins formed on the first heating unit to contact the air flowing in the second heating unit. | 02-24-2011 |
| 20110277513 | Washing machine having drying function and water filter thereof - A washing machine includes a main body, a drum disposed within the main body, an air supply duct disposed so as to be communicated with the drum, and supplying hot air to the inside of the drum, a first exhaust duct communicated with the drum so as to exhaust the hot air from the drum, a second exhaust duct to guide the hot air exhausted from the drum to the outside of the main body, a filter case provided with a hot air introduction hole connected to the first exhaust duct and a hot air exhaust hole connected to the second exhaust duct, a water storage chamber provided within the filter case, and a hot air flow chamber provided within the filter case and communicated with the water storage chamber. | 11-17-2011 |
| 20120144692 | DRYER - A dryer and a control method thereof, in which load of an object to be dried is detected using a sensor which has less risk of contamination and an anticipated drying time based on the detected load is accurately determined and displayed. The dryer includes a rotatable drum to accommodate the object, a front support installed at an entrance of the drum to support the drum, a rear support installed at an opposite side of the entrance of the drum to support the drum, an exhaust hole formed in the front support, through which interior air of the drum is discharged, and a humidity sensor installed to the front support at a position adjacent to the exhaust hole, the humidity sensor being located upstream of the exhaust hole in a rotating direction of the drum to detect humidity of the air to be introduced into the exhaust hole. | 06-14-2012 |
| 20130031798 | DRYING APPARATUS AND WASHING MACHINE HAVING THE SAME AND CONTROL METHOD THEREOF - A drying apparatus having a structure capable of improving condensation efficiency, and a washing machine having the same. The washing machine including a cabinet, a tub installed inside the cabinet, a drum rotatably installed inside the tub, a condenser duct configured to condense moisture in air introduced from the inside the drum, a drying duct configured to heat the air introduced from the condenser duct and supply the heated air to the inside the drum, and a condensation water storage unit formed at a circumference of the condenser duct to store condensation water that is used to condense the moisture in the air moving inside the condenser duct. | 02-07-2013 |
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| 20090101948 | CMOS image sensors having transparent transistors and methods of manufacturing the same - CMOS image sensors having transparent transistors and methods of manufacturing the same are provided. The CMOS image sensors include a photodiode and at least one transistor formed on the photodiode. The image sensor may include a plurality of transistors wherein at least one of the plurality of transistors is a transparent transistor. | 04-23-2009 |
| 20090146198 | Photodiodes, image sensing devices and image sensors - Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength. | 06-11-2009 |
| 20100033611 | Pixel array of three-dimensional image sensor - Provided is a pixel array of a three-dimensional image sensor. The pixel array includes unit pixel patterns each including a color pixel and a distance-measuring pixel arranged in an array form. The unit pixel patterns are arranged in such a way that a group of distance-measuring pixels are disposed adjacent to each other. | 02-11-2010 |
| 20120154537 | IMAGE SENSORS AND METHODS OF OPERATING THE SAME - According to example embodiments, a method of operating a three-dimensional image sensor comprises measuring a distance of an object from the three-dimensional image sensor using light emitted by a light source module, and adjusting an emission angle of the light emitted by the light source module based on the measured distance. The three-dimensional image sensor includes the light source module. | 06-21-2012 |
