Chang Ok
Chang Ok Kim, Seoul KR
Patent application number | Description | Published |
---|---|---|
20130250220 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display includes: a substrate; a thin film transistor on the substrate; a pixel electrode which is connected to a terminal of the thin film transistor; a microcavity layer on the pixel electrode and including an injection hole through which material is provided to the microcavity layer; a supporting layer on the microcavity layer; and a capping layer on the supporting layer. The capping layer covers the injection hole, and the supporting layer includes silicon oxycarbide (SiOC). | 09-26-2013 |
20130264571 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a first substrate including pixels, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. Each of the pixels includes a thin film transistor disposed on a first insulating substrate, a first protective layer that covers the thin film transistor and includes a SiOC layer, a first electrode disposed on the first protective layer, a second protective layer that covers the first electrode, and a second electrode disposed on the second protective layer. | 10-10-2013 |
Chang Ok Kim, Yongin-Si KR
Patent application number | Description | Published |
---|---|---|
20140167032 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display includes: an insulation substrate, a gate line disposed on the insulation substrate, a first field generating electrode disposed on the insulation substrate, a gate insulating layer disposed on the gate line and the first field generating electrode, a semiconductor disposed on the gate insulating layer and a data line disposed on the gate insulating layer. A value [N—H]/[Si—H] of the gate insulating layer is in a range of about 13 to about 25. Here, the value [N—H]/[Si—H] means a ratio of a bonding number [N—H] of nitrogen and hydrogen to a bonding number [Si—H] of silicon and hydrogen according to an analysis of an FT-IR spectrometer. | 06-19-2014 |
Chang Ok Oh, Seoul KR
Patent application number | Description | Published |
---|---|---|
20090136890 | BRACKET FOR REVISING A SET OF TEETH, BRACKET POSITIONING JIG, SYSTEM FOR REVISING A SET OF TEETH USING THE SAME, AND METHOD OF MAKING THE JIG - A system for revising a set of teeth including a bracket for revising a set of teeth and a bracket positioning jig is provided. The bracket positioning jig includes a cap at the lower portion of which a groove contacting tooth is formed, and which has a throughhole to lengthy direction on the upper portion of a cap body, and a connector one side of which has a fixed protrusion which is detachably inserted into and fixed to the throughhole of the cap, and the other side of which is bent toward the lower end of the body and has a coupler which is combined on a slot of an orthodontics treatment bracket for revising a set of teeth. An individual prescription value which is the most appropriate for an individual patient is given to the bracket positioning jig on a computer program to thus manufacture a desired jig, so that a non-prescription bracket as well as a bracket having a given prescription value can be used. | 05-28-2009 |