Chang-Mo

Chang-Mo Hwang, Seoul KR

Patent application number	Description	Published
20080249525	Radio Frequency Ablation Electrode for Selected Tissue Removal - The present invention relates to a radiofrequency electrode for selective ablation of a body tissue, comprising a first electrode	10-09-2008

Patent application number	Description	Published
20100131555	DOUBLE LINK SEARCH SYSTEM AND METHOD FOR DISPLAYING STARTING POSITION OF SEARCH KEYWORD IN SEARCH RESULT PAGE - A double link search system, which when a user inputs a search keyword in a wire or wireless network and inquires out search results, provides the user with a link page displaying a sentence starting with the search keyword, comprises means for receiving a search request including a search keyword from a user terminal; means for collecting search results corresponding to the search keyword from information sites; means for storing a URL (Uniform Resource Locator) of each information site where the search results are located and a unique URL of a search server corresponding to the URL of each information site; means for generating a search result page including search result items, each item having the URL of the search server; and means for providing the user terminal with the search result page.	05-27-2010

Patent application number	Description	Published
20090294781	ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material layer using the initial PR pattern as an etching mask to form the data line and a metallic material pattern, wherein the initial PR pattern is disposed on the data line; performing a first ashing process onto the initial PR pattern to partially remove the initial PR pattern so as to form a first ashed PR pattern, the first ashed PR pattern having a smaller width and a smaller thickness than the initial PR pattern such that end portions of the data line are exposed by the first ashed PR pattern; etching the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer by a first dry-etching process; forming a source electrode and a drain electrode on the substrate.	12-03-2009