Patent application number | Description | Published |
20110230570 | MASK PACK COMPRISING COSMETIC COTTON-LIKE MATERIAL PREPARED FROM PAPER MULBERRY - The present invention relates to a cosmetic cotton-like material having excellent air permeability that is prepared from the paper mulberry by removing fiber-binding substances such as pectin and lignin from the paper mulberry fiber, a preparation method thereof and a mask pack comprising the cotton-like material. | 09-22-2011 |
20120134946 | COMPOSITION HAVING ANTIOXIDANT AND WHITENING EFFECTS CONTAINING A CONCENTRATE OF KOREAN RICE WINE - Disclosed is a composition containing a concentrate of Korean rice wine as an active ingredient. The composition exhibits antioxidant and whitening effects, and thus can be variously used in the fields of cosmetics, functional food or medicine. | 05-31-2012 |
20150136164 | NAIL ART DEVICE, SYSTEM AND METHOD USING MAGNETISM - The nail art device having a control unit, a holder, and a display panel that contains nanomagnetic particles and displays a magnetic pattern by arranging nanomagnetic particles controlled by the control unit is provided. When a finger, to the nail of which polish having a metallic component has been applied, is placed in the holder, the polish applied to the nail reacts with the magnetism of the magnetic pattern displayed on the display panel to form a nail pattern. | 05-21-2015 |
20150182001 | NAIL ART DEVICE, SYSTEM, AND METHOD USING UV LIGHT - The nail art device having: a control unit; a holder; a display panel that displays a predetermined selected pattern through the control of the control unit; and a UV irradiation unit that irradiates the display panel with UV rays is provided. When a finger, to the nail of which polish having a UV-reactive component has been applied, is placed in the holder, the polish applied to the nail reacts with the UV rays which are transmitted through the display panel where the selected pattern is displayed to form a nail pattern. | 07-02-2015 |
Patent application number | Description | Published |
20150187274 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - A method of compensating driving TFTs in an organic light emitting display device is discussed. According to an embodiment, the method includes applying a varied drain voltage to a drain of a specific driving TFT in one of a plurality of pixels; and compensating the specific driving TFT by the varied drain voltage, so as to maintain a constant drain-source voltage at the specific driving TFT. | 07-02-2015 |
20150187328 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF - Discussed is an organic light emitting display device and a driving method thereof, which reduce a size of corrected image data by using a color compression scheme to decrease a capacity of a memory, and reduce a size of an integrated circuit (IC) to increase a manufacturing yield. The method can include loading a compensation coefficient stored in a memory, correcting image data by applying the compensation coefficient to a data voltage supplied to a pixel, compressing, in different compression schemes, corrected image data of a color having high visual perceivability and corrected image data of a color having low visual perceivability, and synthesizing corrected image data of red, green, and blue pixels, which are compressed by the different compression schemes, to store the synthesized image data in a memory. | 07-02-2015 |
Patent application number | Description | Published |
20140185353 | MEMORY - A memory in accordance with an embodiment of the present invention may include a first page buffer, a second page buffer arranged adjacent to the first page buffer in a first direction, a global pad arranged between the first page buffer and the second page buffer, and a first bit line selection unit arranged adjacent to the first page buffer and the second page buffer in a second direction substantially perpendicular to the first direction, wherein a first bit line pad is formed at a center of the a first bit line selection unit. | 07-03-2014 |
20150041901 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device may include a string including at least one drain select transistor, a plurality of first memory cells, a first connection element, a plurality of second memory cells, a second connection element, a plurality of third memory cells, and at least one source select transistor, wherein the at least one drain select transistor, the plurality of first memory cells, the plurality of second memory cells, the plurality of third memory cells, and the at least one source select transistor connected serially via the first connection element and the second connection element. | 02-12-2015 |
20150069616 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate on which a plurality of contact regions are defined, a plurality of transistors formed in the plurality of contact regions, a support body formed over the plurality of transistors and including a top surface, portions of which have different heights in the plurality of contact regions, a plurality of stacked structures including a plurality of conductive layers stacked over the support body, slits located between the plurality of stacked structures, first lines coupled to first junctions of the plurality of transistors through the slits, and second lines coupled to second junctions of the plurality of transistors through the slits. | 03-12-2015 |
20150091135 | SEMICONDUCTOR DEVICE - A semiconductor device includes an insulating layer formed on a substrate, and a capacitor including first and second electrodes formed in the insulating layer, wherein a lower surface of the first electrode is formed to have a greater depth than a lower surface of the second electrode in the insulating layer. | 04-02-2015 |
20150243673 | SEMICONDUCTOR DEVICE - Provided are a semiconductor device. The semiconductor device includes a memory block including a drain select line, word lines, and a source select line, which are spaced apart from one another and stacked in a direction perpendicular to a semiconductor substrate; and a peripheral circuit including a switching device connected to a bit line, which is disposed under a vertical channel layer vertically passing through the drain select line, the word lines, and the source select line. | 08-27-2015 |