Patent application number | Description | Published |
20090302902 | POWER UP SIGNAL GENERATION CIRCUIT AND METHOD FOR GENERATING POWER UP SIGNAL - A power up signal generation circuit transits a power up signal at a predetermined target voltage level by providing a predetermined hysteresis characteristic to the target voltage level of a power supply voltage corresponding to the power up signal. The power up signal generation circuit includes a first voltage detection unit that detects a first target voltage level of a power supply voltage to output a detection signal. The circuit also includes a second voltage detection unit that detects a second target voltage level of the power supply voltage in response to a power up signal to output a control signal, wherein the second target voltage level is lower than the first target voltage level. A power up signal drive unit of the circuit activates the power up signal in response to the detection signal and drives the power up signal in response to the control signal. | 12-10-2009 |
20090303650 | MONITORING CIRCUIT FOR SEMICONDUCTOR DEVICE - Provided is a technology for monitoring the electrical resistance of an element such as a fuse whose resistance is changed due to the electrical stress among internal circuits included in a semiconductor device. The present invention provides a monitoring circuit to monitor the change in the device specification during the device is being programmed and after the device is programmed. The present invention enables the verification of an optimized condition to let the device have a certain electrical resistance, by comparing the load voltage and the fuse voltage with the reference voltage that can sense the range of resistance variation more precisely. Also, it can guarantee device reliability since it is still possible to sense electrical resistance after the electrical stress is being given. Also, the present invention can increase the utility of the fuse by possessing an output to monitor electrical resistance sensed inside of the semiconductor. | 12-10-2009 |
20100008001 | ELECTROSTATIC DISCHARGE PROTECTION OF SEMICONDUCTOR DEVICE - A semiconductor device includes a pads for receiving a reference voltage and input signals from an external device, a unit gain buffer for receiving the reference voltage as an input, input buffers for identifying a corresponding one of the input signals based on an internal reference voltage outputted from the unit gain buffer, external electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of input signals, and internal electrostatic discharge protectors connected to the transmission path of the reference voltage and the transmission paths of the input signals. | 01-14-2010 |
20100008162 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING BIT LINE EQUALIZING SIGNAL - A bit line equalizing signal generator of a semiconductor memory device uses a supply voltage and a pumping voltage in stages during a period where a bit line equalizing signal is enabled, thereby enhancing an equalizing speed and an active speed while minimizing power consumption. The semiconductor memory device includes a bit line equalizing signal generating unit configured to drive an output terminal with the supply voltage during a first activation period at the beginning of the period where the bit line equalizing signal is enabled, and to drive the output terminal with the pumping voltage higher than the supply voltage during a second activation period following the first activation period, thereby outputting the bit line equalizing signal, and a bit line equalizing unit configured to equalize a bit line pair in response to the bit line equalizing signal. | 01-14-2010 |
20100110811 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first data input circuit configured to align data inputted to a first data pad in parallel for transferring the aligned data to a first global bus and for transferring the aligned data to a second global bus in a test mode; and a second data input circuit configured to align data inputted to a second data pad in parallel for transferring the aligned data to the second global bus and to not receive data in the test mode. | 05-06-2010 |
20100277999 | FUSE CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A fuse circuit includes a fuse unit configured to drive an output terminal via a current path including a fuse in response to a fuse enable signal; and a comparison unit configured to be activated in response to an activation signal for comparing a reference voltage having a predetermined level with a voltage level of the output terminal to generate a fuse state signal. | 11-04-2010 |
20110032010 | POWER UP SIGNAL GENERATION CIRCUIT AND METHOD FOR GENERATING POWER UP SIGNAL - A power up signal generation circuit transits a power up signal at a predetermined target voltage level by providing a predetermined hysteresis characteristic to the target voltage level of a power supply voltage corresponding to the power up signal. The power up signal generation circuit includes a first voltage detection unit that detects a first target voltage level of a power supply voltage to output a detection signal. The circuit also includes a second voltage detection unit that detects a second target voltage level of the power supply voltage in response to a power up signal to output a control signal, wherein the second target voltage level is lower than the first target voltage level. A power up signal drive unit of the circuit activates the power up signal in response to the detection signal and drives the power up signal in response to the control signal. | 02-10-2011 |
20110128971 | SEMICONDUCTOR DEVICE AND SIGNAL TRANSMISSION METHOD THEREOF - A semiconductor device having a plurality of transmission lines for transmitting a plurality of signals includes: a first transmission line configured to transmit a first signal while maintaining a same phase of the first signal during an entire transmission duration; and a second transmission line positioned adjacent to the first transmission line and configured to transmit a second signal while inverting a phase of the second signal during a first duration of the entire transmission duration. | 06-02-2011 |
20110140765 | INTERNAL NEGATIVE VOLTAGE GENERATION DEVICE - An internal negative voltage generation device includes a first internal negative voltage generation block configured to generate a first internal negative voltage which is lower than a ground voltage; a second internal negative voltage generation block configured to generate a second internal negative voltage according to the first internal negative voltage, the second internal negative voltage being higher than the first internal negative voltage and lower than the ground voltage; and an initial driving block configured to additionally drive a second internal negative voltage terminal to the first internal negative voltage during an initial set time interval of an active operation time interval. | 06-16-2011 |
20120154024 | INTERNAL NEGATIVE VOLTAGE GENERATION DEVICE - An internal negative voltage generation device includes a first internal negative voltage generation block configured to generate a first internal negative voltage which is lower than a ground voltage; a second internal negative voltage generation block configured to generate a second internal negative voltage according to the first internal negative voltage, the second internal negative voltage being higher than the first internal negative voltage and lower than the ground voltage; and an initial driving block configured to additionally drive a second internal negative voltage terminal to the first internal negative voltage during an initial set time interval of an active operation time interval. | 06-21-2012 |
20120170382 | SEMICONDUCTOR MEMORY DEVICE, TEST CIRCUIT, AND TEST OPERATION METHOD THEREOF - A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads, a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control the first data pads to denote a fail status based on a comparison result, during the test mode. | 07-05-2012 |
20120173937 | SEMICONDUCTOR MEMORY DEVICE, TEST CIRCUIT, AND TEST OPERATION METHOD THEREOF - A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads; a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data, which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control at least one of the first data pads to denote a fail status based on a comparison result, during the test mode. | 07-05-2012 |
20120173942 | SEMICONDUCTOR MEMORY DEVICE, TEST CIRCUIT, AND TEST OPERATION METHOD THEREOF - A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells; a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads; a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads; a path selection unit configured to transfer the first data, which are input through the first data pads, to both the first and second memory cells during a test mode; and a test mode control unit configured to compare the first data of the first and second memory cells, and to control at least one of the first data pads to denote a fail status based on a comparison result, during the test mode. | 07-05-2012 |
20120176848 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING BIT LINE EQUALIZING SIGNAL - A bit line equalizing signal generator of a semiconductor memory device uses a supply voltage and a pumping voltage in stages during a period where a bit line equalizing signal is enabled, thereby enhancing an equalizing speed and an active speed while minimizing power consumption. The semiconductor memory device includes a bit line equalizing signal generating unit configured to drive an output terminal with the supply voltage during a first activation period at the beginning of the period where the bit line equalizing signal is enabled, and to drive the output terminal with the pumping voltage higher than the supply voltage during a second activation period following the first activation period, thereby outputting the bit line equalizing signal, and a bit line equalizing unit configured to equalize a bit line pair in response to the bit line equalizing signal. | 07-12-2012 |
20120195142 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a main word line signal generator configured to generate a main word line signal having a first swing width, a sub-word line signal generator configured to generate a first sub-word line signal and a second sub-word line signal having a second swing width and a third swing width, respectively, a first sub-word line driver configured to drive a corresponding sub-word line with the first sub-word line signal or a negative word line voltage in response to the main word line signal, and a second sub-word line driver configured to drive the corresponding sub-word line with the negative word line voltage in response to the second sub-word line signal. | 08-02-2012 |
20120275244 | SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE HAVING FUSE CIRCUIT - A semiconductor integrated circuit includes: a fuse; a first driving unit configured to drive a sensing node in response to a first fuse sensing signal; a second driving unit configured to drive the sensing node in response to a second fuse sensing signal, wherein the second driving unit and the fuse form a driving path; a bypass resistor unit connected in parallel with the fuse; and a sensing unit configured to sense a programming state of the fuse in response to a voltage of the sensing node. | 11-01-2012 |
20130094302 | INTEGRATED CIRCUIT CHIP AND SEMICONDUCTOR MEMORY DEVICE - An integrated circuit chip includes an internal circuit configured to generate output data, an inversion determination unit configured to activate/deactivate an inversion signal according to state information regarding a state of the integrate circuit chip, and a signal output circuit configured to invert or not to invert the output data in response to the inversion signal and output the inverted or non-inverted output data. | 04-18-2013 |
20130163352 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a plurality of repair fuse units configured to program repair target addresses respectively for repair target memory cells, wherein at least one of the repair fuse units is programmed with data information used for different purposes from the repair target addresses, a plurality of address comparison units each configured to compare an access target address with a corresponding address of the repair target addresses and determine whether to perform a repair operation or not, and a data transfer unit configured to transfer the data information to a corresponding circuit of the semiconductor memory device. | 06-27-2013 |