| Patent application number | Description | Published |
|---|
| 20080198643 | One-time programmable cell and memory device having the same - One-time programmable cell and memory device having the same includes a first metal oxide semiconductor (MOS) transistor configured to form a current path between a first node and a second node in response to a read-control signal, a second MOS transistor configured to form a current path between a third node and the second node in response to a write-control signal and an anti-fuse connected between the second node and a ground voltage terminal, wherein a voltage applied to the second node is output as an output signal. | 08-21-2008 |
| 20090201713 | Unit cell of nonvolatile memory device and nonvolatile memory device having the same - A One-Time Programmable (OTP) unit cell and a nonvolatile memory device having the same are disclosed. A unit cell of a nonvolatile memory device includes: an anti-fuse connected between an output terminal and a ground voltage terminal; a first switching unit connected to the output terminal to transfer a write voltage to the output terminal; and a second switching unit connected to the output terminal to transfer a read voltage to the output terminal. | 08-13-2009 |
| 20090206381 | Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same - An anti-fuse includes a gate dielectric layer formed over a substrate, a gate electrode including a body portion and a plurality of protruding portions extending from the body portion, wherein the body portion and the protruding portions are formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the protruding portions. | 08-20-2009 |
| 20090262565 | METHOD FOR PROGRAMMING NONVOLATILE MEMORY DEVICE - Disclosed is a method for programming a nonvolatile memory device including one time programmable unit cells. The method for programming a nonvolatile memory device including one time programmable (OTP) unit cells, the method comprising applying a pulse type program voltage having a plurality of cycles. The present invention relates to a method for programming a nonvolatile memory device, which can prevent malfunctions by enhancing a data sensing margin in a read operation through the normal dielectric breakdown of an antifuse during a program operation, and thus improve the reliability in the read operation of an OTP unit cell. | 10-22-2009 |
| 20090262567 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device including one-time programmable (OTP) unit cell is provided. The nonvolatile memory device includes: a unit cell; a detecting unit configured to detect data from the unit cell; and a read voltage varying unit configured to vary an input voltage and supply a varied read voltage to the unit cell. | 10-22-2009 |
| 20090284504 | MEMORY DEVICE WITH ONE-TIME PROGRAMMABLE FUNCTION, AND DISPLAY DRIVER IC AND DISPLAY DEVICE WITH THE SAME - A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit. | 11-19-2009 |
| 20100309709 | UNIT CELL OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE WITH THE SAME - Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal. | 12-09-2010 |
