Patent application number | Description | Published |
20120299013 | SEMICONDUCTOR LIGHT EMITTING STRUCTURE - A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer. | 11-29-2012 |
20130048941 | SOLID STATE LIGHT EMITTING SEMICONDUCTOR STRUCTURE AND EPITAXY GROWTH METHOD THEREOF - A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence. | 02-28-2013 |
20130062634 | SOLID STATE LIGHT SOURCE MODULE AND ARRAY THEREOF - A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integrals and N≧1, M≧2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the M | 03-14-2013 |
20130095591 | MANUFACTURING METHOD OF SOLID STATE LIGHT EMITTING ELEMENT - A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure. | 04-18-2013 |
20130328010 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided. | 12-12-2013 |
20130328057 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed. | 12-12-2013 |
20130341589 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer. | 12-26-2013 |
20140027802 | LIGHT EMITTING DIODE WITH UNDERCUT AND MANUFACTURING METHOD THEREOF - An LED with undercut includes a first semiconductor layer, an illumination layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer includes a first area and a second area. A first acute angle is included between a first slanted wall and a first top surface of the first area. The illuminating layer is formed on the second area. The second semiconductor is formed on the illuminating layer. The first and second electrodes are respectively formed on the first top surface and the second semiconductor layer. The first semiconductor layer on the second area, the illuminating layer and the second semiconductor layer on the first semiconductor layer form a MESA structure. The MESA structure includes a second slanted wall adjacent to the first area. A second acute angle is included between the second slanted wall and the first top surface. | 01-30-2014 |
20140070241 | SOLID STATE LIGHT SOURCE ARRAY - A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N≧1, M≧2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the M | 03-13-2014 |
20150079716 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer. | 03-19-2015 |