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Chandrasekaran, US
Aarthi Chandrasekaran, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20080241918 | Hemagglutinin polypeptides, and reagents and methods relating thereto - The present invention provides a system for analyzing interactions between glycans and interaction partners that bind to them. The present invention also provides HA polypeptides that bind to umbrella-topology glycans, and reagents and methods relating thereto. | 10-02-2008 |
| 20090081193 | HEMAGGLUTININ POLYPEPTIDES, AND REAGENTS AND METHODS RELATING THERETO - The present invention provides a system for analyzing interactions between glycans and interaction partners that bind to them. The present invention also provides HA polypeptides that bind to umbrella-topology glycans, and reagents and methods relating thereto. | 03-26-2009 |
| 20100061990 | Hemagglutinin Polypeptides, and Reagents and Methods Relating Thereto - The present invention provides a system for analyzing interactions between glycans and interaction partners that bind to them. The present invention also provides HA polypeptides that bind to umbrella-topology glycans, and reagents and methods relating thereto. | 03-11-2010 |
| 20100119494 | METHODS AND COMPOSITIONS RELATED TO MODULATING THE EXTRACELLULAR STEM CELL ENVIRONMENT - This invention relates, in part, to methods and compositions that modulate the stem cell environment. More specifically, the invention relates, in part, to methods and compositions for modulating stem cell differentiation. Therefore, methods and compositions are provided for modulating glycosaminoglycan moieties, e.g., heparan sulfate glycosaminoglycan (HSGAG) moieties, in the microenvironment of stem cells. Methods and compositions for promoting or inhibiting embryonic stem cell differentiation (e.g., differentiation into endothelial cells) are also provided. This invention also relates, therefore, in part, to cell populations (e.g., endothelial cell populations or impoverished endothelial cell populations) that can be produced with the methods and compositions provided. Furthermore, the invention relates, in part, to tissues, and uses thereof, formed by the methods and compositions provided. Moreover, the invention also relates, in part, to methods of treatment using the methods and compositions provided. | 05-13-2010 |
Appavu Chandrasekaran, Plainsboro, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20080255057 | PRODRUG SUBSTITUTED BENZOXAZOLES AS ESTROGENIC AGENTS - This invention provides estrogen receptor modulators of formula I, having the structure | 10-16-2008 |
| 20090181932 | COMPOSITIONS CONTAINING O-SULFATE AND O-PHOSPHATE CONTAINING ARYL SULFONAMIDE DERIVATIVES USEFUL AS beta-AMYLOID INHIBITORS - A synthetic compound characterized by having the structure of formula I or II or a pharmaceutically acceptable salt and/or hydrate thereof is provided. Formula I and formula II are defined as follows. | 07-16-2009 |
| 20090306000 | TANAPROGET DERIVATIVES, METABOLITES, AND USES THEREOF - A method of generating synthetic metabolites of tanaproget derivatives thereof is provided. These compounds and methods of using these derivatives for detecting tanaproget metabolites in samples are provided. | 12-10-2009 |
Casey K. Chandrasekaran, Kennett Square, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20080233291 | Method for depositing an inorganic layer to a thermal transfer layer - The invention is a method for depositing an inorganic layer to a laser-induced thermal transfer layer, and to a deposited transfer layer made by the method. In one embodiment, the transfer layer is disposed on a receiver element comprising a glass substrate with black matrix for a color filter comprising red, blue and green transparent pixels formed by laser-induced thermal transfer, and the inorganic layer is an indium-tin oxide transparent electrode grounding layer. The method for depositing the inorganic layer to the transfer layer comprises exposing a laser-induced thermal transfer layer to ultraviolet radiation to produce an exposed transfer layer, treating the exposed transfer layer with a cleaning fluid to produce a cleaned transfer layer, and depositing an inorganic layer in contact with the cleaned transfer layer to produce a deposited transfer layer. | 09-25-2008 |
E.v. Chandrasekaran, Northbrook, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20100221763 | Specific Acceptors for Transferases to Saccharides and Method for Obtaining and Using Same - A method for determining substrates specific for a transferase enzyme selected from the group consisting of glycosyltransferases and sulfotransferases. The method includes the steps of: | 09-02-2010 |
Hari Chandrasekaran, Pepper Pike, OH US
| Patent application number | Description | Published |
|---|---|---|
| 20100308495 | PROCESS FOR THE MANUFACTURE OF REACTIVE RUBBER PROCESS AIDS - A process for the manufacture of rubber process aids from blends of vulcanized rubber powders, virgin polymers and thermoplastic resins. The process is carried out in a single stage using an extruder. The extruder is fed in three sections with feed hoppers. Vulcanized rubber powder of selected origin is fed into the hopper in the first section with part of the thermoplastic resin and oxidizing agents. The balance of the thermoplastic resin is fed in the second section. Virgin polymer is fed into the hopper in the third section. The temperature of the extruder is controlled and dwell time of the material passing through each of the extruder's sections is adjusted to ensure adequate mixing of all the polymers whereby a reactive rubber process aid in free flowing particulates is produced that acts as an excellent process aid in rubber processing. | 12-09-2010 |
Jayachandran Chandrasekaran, Houston, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100132257 | Systems and Methods for Increasing Carbon Dioxide in Gasification - Systems and methods for processing carbonaceous material are provided. In one or more embodiments, a carbonaceous material and water can be mixed to provide a slurried mixture. The water mixed with the carbonaceous material can be at least 90% liquid phase. At least a portion of the slurried mixture can be gasified in the presence of a combustion gas to provide carbonaceous solids and a syngas comprising hydrogen, carbon monoxide, and carbon dioxide. The syngas can be at a temperature of from about 400° C. to about 1,650° C. At least a portion of the carbonaceous solids can be selectively separated from the syngas to provide a syngas product and carbonaceous solids. At least a portion of the separated carbonaceous solids can be combusted in the presence of an oxidant to provide at least a portion of the combustion gas. | 06-03-2010 |
Krish C. Chandrasekaran, Pepper Pike, OH US
| Patent application number | Description | Published |
|---|---|---|
| 20100308495 | PROCESS FOR THE MANUFACTURE OF REACTIVE RUBBER PROCESS AIDS - A process for the manufacture of rubber process aids from blends of vulcanized rubber powders, virgin polymers and thermoplastic resins. The process is carried out in a single stage using an extruder. The extruder is fed in three sections with feed hoppers. Vulcanized rubber powder of selected origin is fed into the hopper in the first section with part of the thermoplastic resin and oxidizing agents. The balance of the thermoplastic resin is fed in the second section. Virgin polymer is fed into the hopper in the third section. The temperature of the extruder is controlled and dwell time of the material passing through each of the extruder's sections is adjusted to ensure adequate mixing of all the polymers whereby a reactive rubber process aid in free flowing particulates is produced that acts as an excellent process aid in rubber processing. | 12-09-2010 |
Naga Chandrasekaran, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090152629 | METHODS OF SELECTIVELY OXIDIZING SEMICONDUCTOR STRUCTURES, AND STRUCTURES RESULTING THEREFROM - Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed. | 06-18-2009 |
| 20100244158 | SEMICONDUCTOR STRUCTURES RESULTING FROM SELECTIVE OXIDATION - Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed. | 09-30-2010 |
| 20110269305 | METHOD FOR FORMING A FLOATING GATE USING CHEMICAL MECHANICAL PLANARIZATION - An improved process forming a floating gate region of a semiconductor memory device. The process includes using a ceria slurry for chemical mechanical planarization to provide “stop on polysilicon” capabilities, allowing a thin nitride layer, or in the alternative no nitride layer, to be used and reducing the number of processing steps required to form the floating gate region. | 11-03-2011 |
Nagasubramaniyan Chandrasekaran, Boise, ID US
Neelakandan Chandrasekaran, Woodbury, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20110186518 | POLYMER COMPOSITION WITH PHYTOCHEMICAL AND DIALYSIS MEMBRANE FORMED FROM THE POLYMER COMPOSITION - A biocompatible polymer composition which includes a matrix material and at least one of an isoflavone and a flavone at least partially dispersed in the matrix material is suited to use in a membrane for hemodialysis and other in vivo and in vitro applications. | 08-04-2011 |
| 20110233138 | POLYMER COMPOSITION AND DIALYSIS MEMBRANE FORMED FROM THE POLYMER COMPOSITION - A biocompatible polymer composition suited to forming a dialysis membrane includes a matrix material and at least one xanthone. The composition may be formed into a membrane for inserting into a dialyzer filter whereby free radicals in the fluid are removed by the membrane. | 09-29-2011 |
Nithya Chandrasekaran, Collierville, TN US
| Patent application number | Description | Published |
|---|---|---|
| 20120022650 | METHOD FOR PREPARING BIOMEDICAL SURFACES - A method for selectively dissolving the beta (β) phase of a titanium alloy out of the surface of the alloy, thereby leaving behind a nano-scale porous surface having enhanced bonding properties with either a biological tissue, such as bone, or an adhesive material, such as a polymer or ceramic by immersing the alloy in an ionic aqueous solution containing high levels of hydrogen peroxide and then exposing the alloy to an electrochemical voltage process resulting in the selective dissolution of the beta phase to form a nano-topographic metallic surface. | 01-26-2012 |
Ramaswamy Chandrasekaran, Plano, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20090028560 | System and Method for Implementing Dynamic Scheduling of Data in a Non-Blocking All-Optical Switching Network - A non-blocking optical matrix core switching method that includes maintaining a schedule for routing data through an optical matrix core and receiving and analyzing reports from peripheral devices. The method determines whether the schedule is adequate for the current data traffic patterns and if the schedule is not adequate a new schedule is implemented. The new schedule is then transferred to the peripheral devices for implementation and the new schedule is transferred to the optical matrix core scheduler. Implementation of the new schedule as the schedule on the peripheral devices and the optical matrix core scheduler is then performed. | 01-29-2009 |
Ramesh M. Chandrasekaran, Plano, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20120008834 | Motion Detection in Video with Large Areas of Detail - A method for motion detection is provided that includes determining a first motion measure for a pixel based on differences between first neighboring pixels of the pixel, determining a detail measure for the pixel, wherein the detail measure is indicative of an amount of detail in second neighboring pixels of the pixel, adapting a first coring threshold and a first gain of a first transfer function based on the detail measure, and using the adapted first transfer function to map the first motion measure to a first motion parameter. | 01-12-2012 |
Senthil K. Chandrasekaran, Tampa, FL US
| Patent application number | Description | Published |
|---|---|---|
| 20120128139 | Methods and Systems for Aggregating and Graphically Representing Information Associated with a Telecommunications Circuit - Exemplary systems and methods for aggregating and graphically representing information associated with a telecommunications circuit are disclosed. An exemplary method includes a telecommunications management subsystem receiving, from a plurality of backend telecommunications subsystems, data representative of information associated with a telecommunications circuit, aggregating the data representative of the information associated with the telecommunications circuit, providing a portal configured for access by a user associated with the telecommunications circuit, and displaying, within the portal, a graphical user interface including a graphical representation of the telecommunications circuit. Corresponding methods and systems are also disclosed. | 05-24-2012 |
Sriram Chandrasekaran, Round Rock, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080224812 | ISOLATED POWER CONVERTER - There is provided an isolated power converter. More particularly, in one embodiment, there is provided a power converter including a first magnetic core having a primary winding and a secondary winding around the first magnetic core. The power converter also includes a second magnetic core having a first leg, a second leg coupled to the first leg, and a third leg coupled to the first and second legs, wherein a part of the third leg is equidistant from the first leg and the second leg. The power converter also has a first winding encircling the first leg, a first end of the first winding coupled to the secondary winding, a second winding encircling the second leg, a first end of the second winding coupled to the secondary winding, and a third winding encircling the third leg, a first end of the third winding coupled to a second end of the first wining and to a second end of the second winding. | 09-18-2008 |
| 20090097290 | Isolated Power Converter - An isolated power converter that includes, in one embodiment, a first magnetic core having a primary winding and a secondary winding around the first magnetic core. The power converter includes a second magnetic core having a first leg, a second leg coupled to the first leg, and a third leg coupled to the first and second legs, wherein a part of the third leg is equidistant from the first leg and the second leg. The power converter also includes a first winding encircling the first leg, a first end of the first winding coupled to the secondary winding, a second winding encircling the second leg, a first end of the second winding coupled to the secondary winding, and a third winding encircling the third leg, a first end of the third winding coupled to a second end of the first winding and to a second end of the second winding. | 04-16-2009 |
Sriram Chandrasekaran, Dallas, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100254168 | Magnetic Device Formed with U-Shaped Core Pieces and Power Converter Employing the Same - A magnetic device formed with U-shaped core pieces employable in a power converter, and a method of forming the same. In one embodiment, the magnetic device includes a rectilinear core piece formed of a magnetic material, and first and second U-shaped core pieces positioned on the rectilinear core piece. The magnetic device also includes first and second conductive windings formed about the first and second U-shaped core pieces, respectively. | 10-07-2010 |
Venkatagiri Chandrasekaran, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110271034 | MULTIPLE PARTITIONED EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY AND METHOD OF OPERATION - A method and system wherein a volatile memory is partitioned to have a first percentage of address space dedicated to a first classification of data which is data that is expected to have greater than a predetermined number of times of being modified and a second percentage of address space dedicated to a second classification of data which is data that is expected to have less than the predetermined probability of being modified. Address assignment of data to be stored in the volatile memory is made on a basis of predicted change of the data. Memory addresses of the first and second percentages of address space are respectively assigned to first and second sections of nonvolatile memory. The memory addresses of the first percentage initially consume a smaller percentage of an address map of the first section than the memory addresses of the second percentage of the second section. | 11-03-2011 |
| 20110271035 | EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY AND METHOD OF OPERATION - A system has an emulation memory having a plurality of sectors for storing information. A controller calculates a number of addresses used divided by a number of valid records in a predetermined address range of the emulation memory. An amount of remaining addresses in a currently used space of the emulation memory which have not been used to store information is calculated. A determination is made whether the calculation is greater than a first predetermined number and whether the amount of remaining addresses is greater than a second predetermined number. If both the fraction is greater than the first predetermined number and the amount of remaining addresses is greater than the second predetermined number, any subsequent update requests are responded to using the currently used space of the emulation memory. Otherwise a compression of the emulation memory is required by copying valid data to an available sector. | 11-03-2011 |
Venkataraman Chandrasekaran, Mansfield, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110110550 | Microphone with Variable Low Frequency Cutoff - A microphone system has a package with an interior, a MEMS microphone within the package interior and forming a backvolume between it and the package interior, and a MEMS valve coupled with at least one input aperture in the package. The package defines at least one input aperture (e.g., the prior noted aperture) for receiving an acoustic signal, and the MEMS microphone is mechanically coupled to at least a portion of one input aperture. The valve has a valve opening generally circumscribed by a valve seat. The valve is considered as having an open mode for permitting acoustic signal access into the package interior through the valve opening, and a closed mode for substantially preventing acoustic signal access into the package interior through the valve opening. The valve has a movable member configured to contact the valve seat when in the closed mode. This movable member is configured to move between the open mode and the closed mode in a direction that is generally perpendicular to the valve seat. | 05-12-2011 |
Vinodh Chandrasekaran, Suwanee, GA US
| Patent application number | Description | Published |
|---|---|---|
| 20110114171 | SOLAR CELL INCLUDING SPUTTERED REFLECTIVE LAYER - Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti-reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided. | 05-19-2011 |
| 20110132444 | SOLAR CELL INCLUDING SPUTTERED REFLECTIVE LAYER AND METHOD OF MANUFACTURE THEREOF - Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti-reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided. | 06-09-2011 |
| 20110132448 | SOLAR CELLS AND METHODS OF FABRICATION THEREOF - Solar cells and methods for fabrication thereof are provided. A method may include forming a via through at least one dielectric layer formed on a semiconductor wafer by using a laser to ablate a region of the at least one dielectric layer such that at least a portion of the surface of the semiconductor wafer is exposed by the via. The method may further include applying a self-doping metal paste to the via. The method may additionally include heating the semiconductor wafer and self-doping metal paste to a temperature sufficient to drive at least some dopant from the self-doping metal paste into the portion of the surface of the semiconductor wafer exposed by the via to form a selective emitter region and a contact overlying and self-aligned to the selective emitter region. | 06-09-2011 |
| 20110139229 | SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS - Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided. | 06-16-2011 |
| 20110139230 | ION IMPLANTED SELECTIVE EMITTER SOLAR CELLS WITH IN SITU SURFACE PASSIVATION - Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided. | 06-16-2011 |
| 20110139231 | BACK JUNCTION SOLAR CELL WITH SELECTIVE FRONT SURFACE FIELD - Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. The firing of the back contact may form a p | 06-16-2011 |
| 20120107998 | ION IMPLANTED SOLAR CELLS WITH IN SITU SURFACE PASSIVATION - Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer. | 05-03-2012 |
| 20120125416 | SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS - Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle. | 05-24-2012 |