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| 20110264519 | SOCIAL BEHAVIORAL TARGETING OF ADVERTISEMENTS IN A SOCIAL NETWORKING ENVIRONMENT - Processes and systems for tracking and utilizing interactions between users and advertisements within a social network are provided. An exemplary process includes receiving interaction data associated with interactions between users and advertisements and training an adaptive algorithm based on interaction data, user data, and advertisement data. Interaction data may include past interactions with an advertisement by a user, and along with associated user data (e.g., demographic data, social data, etc.), and advertisement data (e.g., advertisement details and targeting criteria), can be used by an adaptive algorithm to identify patterns between user data and advertising data to increase the chances of a desired interaction when placing advertisements to users. The adaptive algorithm may include one or more of an adaptive pattern matching algorithm, regression analysis algorithm, neural network algorithm, or genetic algorithm. | 10-27-2011 |
| 20110264522 | DIRECT TARGETING OF ADVERTISEMENTS TO SOCIAL CONNECTIONS IN A SOCIAL NETWORK ENVIRONMENT - Processes and systems for targeting advertisements to users within a social network are provided. In one example, a process includes receiving an advertisement request from a first user of a social networking system, the advertisement request including an advertisement and at least one social targeting criterion associated with the advertisement. The social targeting criterion may include an indication to target second users of the social networking system having a direct or first degree of connection to the first user. The process may further determine one or more attributes of the first users; for example, identifying one or more second users having a first degree of connection to the user. In other examples, the targeting criterion may include targeting second users having a second degree of connection relative to the first user, targeting second users of one or more social groups of the first user, or combinations thereof. | 10-27-2011 |
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| 20090005733 | INFUSION TREATMENT AGENTS, CATHETERS, FILTER DEVICES, AND OCCLUSION DEVICES, AND USE THEREOF - Embodiments include an infusion-occlusion system having a delivery catheter, a guide catheter adapted to receive the delivery catheter, and a guidewire with an occlusion device adapted to be received within the guide catheter. The guide catheter of the catheter kit may be provided with an occlusion device at the distal end of the guide catheter. The delivery catheter may have an accessory lumen, coaxial or co-linear lumen, a supporting mandrel, or an occlusion device at its distal end. Moreover, according to some embodiments, occlusion devices may be a single material or a composite balloon having an inner liner and an outer layer of different materials, a high compliance low pressure balloon, or a filter device that restricts particles from passing through but does not restrict fluid, such as blood. An inflation device with a large volume and low volume syringe can be used to inflate the balloon. | 01-01-2009 |
| 20090018498 | INFUSION TREATMENT AGENTS, CATHETERS, FILTER DEVICES, AND OCCLUSION DEVICES, AND USE THEREOF - Embodiments include an infusion-occlusion system having a delivery catheter, a guide catheter adapted to receive the delivery catheter, and a guidewire with an occlusion device adapted to be received within the guide catheter. The guide catheter of the catheter kit may be provided with an occlusion device at the distal end of the guide catheter. The delivery catheter may have an accessory lumen, coaxial or co-linear lumen, a supporting mandrel, or an occlusion device at its distal end. Moreover, according to some embodiments, occlusion devices may be a single material or a composite balloon having an inner liner and an outer layer of different materials, a high compliance low pressure balloon, or a filter device that restricts particles from passing through but does not restrict fluid, such as blood. An inflation device with a large volume and low volume syringe can be used to inflate the balloon. | 01-15-2009 |
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| 20090087963 | METHOD FOR REDUCING PILLAR STRUCTURE DIMENSIONS OF A SEMICONDUCTOR DEVICE - A method creates pillar structures on a semiconductor wafer and includes the steps of providing a layer of semiconductor. A layer of photoresist is applied over the layer of semiconductor. The layer of photoresist is exposed with an initial pattern of light to effect the layer of photoresist. The photoresist layer is then etched away to provide a photoresist pattern to create the pillar structures. The photoresist pattern is processed in the layer of photoresist after the step of exposing the layer of photoresist and prior to the step of etching to reduce the dimensions of the photoresist pattern in the layer of photoresist. | 04-02-2009 |
| 20090179310 | Pillar devices and methods of making thereof - A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings. | 07-16-2009 |
| 20090258318 | Double patterning method - A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask. | 10-15-2009 |
| 20090258495 | Modified darc stack for resist patterning - A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer. | 10-15-2009 |
| 20090258501 | Double patterning method - A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask. | 10-15-2009 |
| 20110014771 | Method of making damascene diodes using selective etching methods - A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings. | 01-20-2011 |
| 20110136326 | PILLAR DEVICES AND METHODS OF MAKING THEREOF - A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings. | 06-09-2011 |
| 20110236833 | Double Patterning Method - A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask. | 09-29-2011 |
