| Patent application number | Description | Published |
|---|
| 20090183548 | METHOD AND APPARATUS FOR IN SITU TESTING OF GAS FLOW CONTROLLERS - Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test. | 07-23-2009 |
| 20090183549 | METHOD AND APPARATUS FOR IN SITU TESTING OF GAS FLOW CONTROLLERS - Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test. | 07-23-2009 |
| 20110011183 | METHOD AND APPARATUS FOR IN SITU TESTING OF GAS FLOW CONTROLLERS - Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test. | 01-20-2011 |
| 20110137581 | METHOD AND APPARATUS FOR ENHANCING IN-SITU GAS FLOW MEASUREMENT PERFORMANCE - An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces. | 06-09-2011 |
| 20110137582 | METHOD AND APPARATUS FOR ENHANCING IN-SITU GAS FLOW MEASUREMENT PERFORMANCE - An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces. | 06-09-2011 |
| 20110137583 | METHOD AND APPARATUS FOR ENHANCING IN-SITU GAS FLOW MEASUREMENT PERFORMANCE - An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces. | 06-09-2011 |
| Patent application number | Description | Published |
|---|
| 20090005894 | METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING - Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model. | 01-01-2009 |
| 20100121474 | Method and System for Enhancing the Yield In Semiconductor Manufacturing - Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model. | 05-13-2010 |
