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Chalamala

Babu Chalamala, Durham, NC US

Patent application numberDescriptionPublished
20100189223DIGITALLY ADDRESSED FLAT PANEL X-RAY SOURCES - An apparatus and method for the X-ray irradiation of materials is provided. This apparatus includes an irradiation chamber, a number of flat electromagnetic (X-ray) sources having a number of addressable cathode emitters, a support mechanism, a heat transfer system, a shielding system, and a process controller. A shielded portal within the shielding system allows access to an interior volume of the irradiation chamber. The electromagnetic sources are positioned on or embedded within interior surfaces of the irradiation chamber. These electromagnetic sources generate an electromagnetic flux, such as an X-ray flux, where this flux is used to irradiate the interior volume of the irradiation chamber and any materials placed therein. The operation of the electromagnetic sources and the number of addressable cathode emitters being controlled by the process controller. The materials placed within the interior of the chamber may be supported by a low attenuation support mechanism. This low attenuation support mechanism does not substantially reduce the X-ray flux intended to irradiate the materials placed within the interior volume of the irradiation chamber.07-29-2010

Sreenivasa Chalamala, Dresden DE

Patent application numberDescriptionPublished
20090195280INTEGRATED CIRCUIT HAVING A MEMORY WITH A PLURALITY OF STORAGE CELLS OF SYNCHRONOUS DESIGN AND CONNECTED TO CLOCK GATING UNITS - In a memory area having portions of predictable access frequency, such as in a memory area of a real time clock unit, a synchronous design may be implemented by associating storage cells of identical access frequency with a clock gating mechanism, thereby reducing power consumption. Hence, the synchronous design of the real time clock unit may provide reduced implementation effort and enhanced verification capability.08-06-2009
20090197377ESD POWER CLAMP WITH STABLE POWER START UP FUNCTION - A selective stress memorization technique is disclosed in which the creation of tensile strain may be accomplished without additional photolithography steps by using an implantation mask or any other mask required during a standard manufacturing flow, or by providing a patterned cap layer for a strained re-crystallization of respective drain and source areas. In still other aspects, additional anneal steps may be used for selectively creating a crystalline state and a non-crystalline state prior to the re-crystallization on the basis of a cap layer. Thus, enhanced strain may be obtained in one type of transistor while not substantially negatively affecting the other type of transistor without requiring additional photolithography steps.08-06-2009
20090243663ANALOG COMPARATOR COMPRISING A DIGITAL OFFSET COMPENSATION - A digital compensation of an input stage of a comparator may be achieved by providing switched load elements, which may be appropriately connected to the differential input pair of the comparator in order to match transistor characteristics of the input pair and also match the load value of the input stage. Thus, enhanced offset behavior may be accomplished without providing an external signal and/or without requiring complex reference voltages/currents.10-01-2009
20090273053SEMICONDUCTOR DEVICE INCLUDING ANALOG CIRCUITRY HAVING A PLURALITY OF DEVICES OF REDUCED MISMATCH - In an analog circuit portion, a systematic mismatch between a plurality of circuit elements may be reduced in view of a technology gradient by appropriately positioning the unit devices of the circuit elements so as to obtain a similar response of the circuit elements with respect to the gradient. For example, the spatial relationship of adjacent unit devices belonging to the same circuit element along an arbitrary lateral direction may be the same as the spatial relationship of adjacent unit devices of another circuit element.11-05-2009

Subrahmanyeshwara Rao Chalamala, City Hyderabad IN

Patent application numberDescriptionPublished
20090018351PREPARATION OF ESCITALOPRAM - The present invention relates to a process for preparing enantiomerically enriched citalopram via methylating enantiomerically enriched didesmethylcitalopram, which is prepared by directly resolving racemic didesmethylcitalopram using a chiral acid.01-15-2009