Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Chae, CA
Eunsook Chae, Long Beach, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100193973 | SEMICONDUCTOR WAFER COATED WITH A FILLED, SPIN-COATABLE MATERIAL - This invention is a semiconductor wafer having an active side and a back side opposite the active side, which back side is coated with a filled, spin-coatable coating, wherein the coating comprises a resin and a spherical filler characterized by an average particle diameter of greater than 2 μm and a single peak particle size distribution. In another embodiment the invention is a method for producing a spin-coatable, B-stageable coating with a thixotropic index of 1.2 or less. In a third embodiment the invention is a method for producing a coated semiconductor wafer. | 08-05-2010 |
Heeyeop Chae, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110201134 | CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL - A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support. | 08-18-2011 |
Hyunsik Chae, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100308310 | EMISSIVE ARYL-HETEROARYL ACETYLENES - Disclosed herein are compounds represented by a formula: R | 12-09-2010 |
| 20100326526 | EMISSIVE ARYL-HETEROARYL COMPOUNDS - Disclosed herein are compounds represented by Formula 1, wherein R | 12-30-2010 |
| 20100327269 | EMISSIVE TRIARYLS - Disclosed herein are compounds represented by Formula 1. Compositions and light-emitting devices related thereto are also disclosed. | 12-30-2010 |
| 20110062386 | COMPOUNDS FOR ORGANIC LIGHT EMITTING DIODE EMISSIVE LAYERS - Disclosed herein are compounds represented by a formula: | 03-17-2011 |
| 20110193075 | PRINTABLE LIGHT-EMITTING COMPOSITIONS - Disclosed herein are compositions comprising an electron transport compound, an emissive compound, and an organic solvent. The emissive compound comprises an organic indium complex attached to a nanoparticle core. These compositions are useful in fabricating light emitting devices and can be deposited on a substrate via a printing process. | 08-11-2011 |
Hyun Sik Chae, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090066234 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as an organic-inorganic light-emitting iridium-functionalized nanoparticle. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition. In an embodiment, the light emitting device can emit white light. | 03-12-2009 |
| 20090179552 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting lumophore-functionalized nanoparticle, such as an organic-inorganic light-emitting lumophore-functionalized nanoparticle. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition. In an embodiment, the light emitting device can emit white light. | 07-16-2009 |
Jeongseok Chae, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20120007644 | COMPARATOR-BASED BUFFER WITH RESISTIVE ERROR CORRECTION - A comparator-based buffer method and system enhance the driving capability of high-gain amplifiers with switched-capacitor loads. It includes a current source, a comparator, switches, sampling capacitor and overshoot correction resistor. A correction solution using a resistor in the charging path and a correction phase reduces the overshoot of the output voltage while constraining power consumption and minimizing components. Spectre® simulations verify the effectiveness of the invention. | 01-12-2012 |
Sangwon Chae, Irvine, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110216284 | AUTOMATIC MODE SWITCHING BETWEEN SINGLE AND MULTIPLE PROJECTORS - Control of a multiprojector system having multiple projectors arranged in a projector array. It is determined whether the projector array is positioned to form one object or two or more objects. A first keystone correction mode is selected if it is determined that the projector array is positioned to form one object. A second keystone correction mode is selected if it is determined that the projector array is positioned to form two or more objects. In the first keystone correction mode, a homography transformation for each of the projectors is derived so as to accommodate keystone correction of all projectors in the projector array involved in the projection of the single object. In the second keystone correction mode, a homography transformation for each of the projectors is derived so as to accommodate keystone correction of all projectors involved in the projection of each object. | 09-08-2011 |
| 20110321111 | DYNAMIC LAYOUT OF CONTENT FOR MULTIPLE PROJECTORS - A projection system distributed on a network, the projection system comprising a projection server and at least one projection client. The projection client hosts a projector array of multiple projectors which together project a tiling of an image onto a projection surface. The projection server accepts an incoming request from the projection client via the network, the request providing the projection server with area information for a projection area of the projector array onto the projection surface. The projection server determines a layout for the image by calculations using the area information. Layout information based on the layout is transmitted via the network to the projection client in response to the request, and image data is projected in accordance with the layout information received from the projection server. | 12-29-2011 |
Yong K. Chae, San Ramon, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110263074 | APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS - Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin. | 10-27-2011 |
Yong Kee Chae, San Ramon, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110174362 | MANUFACTURE OF THIN FILM SOLAR CELLS WITH HIGH CONVERSION EFFICIENCY - A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a antireflection coating layer disposed on a first surface of a substrate, a barrier layer disposed on a second surface of the substrate, a first transparent conductive oxide layer disposed on the barrier layer, a conductive contact layer disposed on the first transparent conductive oxide layer, a first p-i-n junction formed on the conductive contact layer, and a second transparent conductive oxide layer formed on the first p-i-n junction. | 07-21-2011 |
| 20110177648 | METHOD OF MANUFACTURING THIN FILM SOLAR CELLS HAVING A HIGH CONVERSION EFFICIENCY - A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a antireflection coating layer disposed on a first surface of a substrate, a barrier layer disposed on a second surface of the substrate, a first transparent conductive oxide layer disposed on the barrier layer, a conductive contact layer disposed on the first transparent conductive oxide layer, a first p-i-n junction formed on the conductive contact layer, and a second transparent conductive oxide layer formed on the first p-i-n junction. | 07-21-2011 |
| 20110232753 | METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE - A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer. | 09-29-2011 |
Yong Kee Chae, San Roman, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100269896 | MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS - A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity. | 10-28-2010 |