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| 20080241386 | Atomic Layer Deposition Methods - The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated. | 10-02-2008 |
| 20080268591 | Methods of Forming Capacitors - A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated. | 10-30-2008 |
| 20090061080 | METHODS FOR FORMING CONDUCTIVE STRUCTURES AND STRUCTURES REGARDING SAME - A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g, ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices. | 03-05-2009 |
| 20090215252 | Methods of Depositing Materials Over Substrates, and Methods of Forming Layers over Substrates - The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide. | 08-27-2009 |
| 20110147935 | METHOD AND SYSTEM FOR BINDING HALIDE-BASED CONTAMINANTS - A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided. | 06-23-2011 |
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| 20110163416 | METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES - The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 Å. | 07-07-2011 |
| 20120056206 | SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material. | 03-08-2012 |
| 20120056219 | BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS - Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs. | 03-08-2012 |
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| 20090264783 | SYSTEMS AND METHODS FOR IMPROVED ATRIAL FIBRILLATION (AF) MONITORING - Methods and systems described herein are especially useful wherein monitoring for atrial fibrillation (AF) is based on RR interval variability as measured from an electrocardiogram (ECG) signal. An activity threshold, which can be patient specific, is obtained. Patient activity is monitored. Based on the monitored patient activity and the activity threshold, there is a determination of when it is likely that AF monitoring based on RR interval variability is adversely affected by patient activity. When it has been determined that it is likely that AF monitoring based on RR interval variability is adversely affected by patient activity, whether and/or how AF monitoring is performed is modified. | 10-22-2009 |
| 20090270939 | DEVICE AND METHOD FOR DETECTING ATRIAL FIBRILLATION - Detection of atrial fibrillation involves detecting a plurality of ventricular events and obtaining a series of probabilities of AF, each corresponding to a probability of AF for a different beat window having a plurality of ventricular events. AF onset is detected when one or each of a plurality of consecutive AF probabilities satisfies an AF trigger threshold. AF termination is detected when one or each of a plurality of consecutive AF probabilities does not satisfy the AF trigger threshold. Upon detection of AF onset, ventricular events are processed to detect for a sudden onset of irregularity of the ventricular events. AF onset is confirmed when sudden onset is detected and overturned when sudden onset is not detected. | 10-29-2009 |
| 20110028848 | Methods and Apparatus for Detecting and Mapping Tissue Interfaces - A device for measuring a spatial location of a tissue surface, such as the interface between different types of tissues or between tissue and body fluids, generally includes an elongate catheter body having a distal end portion, a plurality of localization elements carried by the distal end portion, and at least one pulse-echo acoustic element carried by the distal end portion. The localization elements allow the catheter to be localized (e.g., position and/or orientation) within a localization field, while the acoustic element allows for the detection of tissue surfaces where incoming acoustic energy will reflect towards the acoustic element. A suitable controller can determine the location of the detected tissue surface from the localization of the distal end portion of the catheter body. Tissue thicknesses can be derived from the detected locations of multiple (e.g., near and far) tissue surfaces. Maps and models of tissue thickness can also be generated. | 02-03-2011 |
| 20110152957 | CHAOS-BASED DETECTION OF ATRIAL FIBRILLATION USING AN IMPLANTABLE MEDICAL DEVICE - Techniques are provided for detecting atrial fibrillation (AF) based on variations in ventricular intervals detected by a pacemaker, implantable cardioverter-defibrillator (ICD) or implantable cardiac monitor (ICM). In one example, ventricular beats are detected and intervals between the ventricular beats are measured, such as RR intervals. Irregular ventricular beats are identified, including ectopic beats, bigeminal beats, and the like. The degree of variability within the ventricular intervals is then determined while excluding any intervals associated with irregular beats. AF is then detected based on the degree of variability. That is, AF is detected based on variability occurring within ventricular intervals after ectopic beats and other irregular beats have been eliminated, thus mitigating detection problems that might arise if the variability were instead calculated based on all ventricular beat intervals. Techniques are also described herein for distinguishing AF from sinus tachycardia, which can also cause a high degree of variability in RR intervals. | 06-23-2011 |
