| Patent application number | Description | Published |
|---|
| 20090250635 | METHOD AND APPARATUS FOR PROCESSING MULTIPHOTON CURABLE PHOTOREACTIVE COMPOSITIONS - A method including providing a substrate having thereon a layer including a multiphoton polymerizable composition, applying a light beam to at least one region of the layer, wherein the light beam cures or initiates cure of the multiphoton curable photoreactive composition; and processing a portion of the light beam reflected off the substrate to obtain a location signal of an interface between the layer and the substrate at each region. | 10-08-2009 |
| 20100051970 | PLANARIZED LED WITH OPTICAL EXTRACTOR - A light emitting article is disclosed and includes a light emitting diode having an n-layer or p-layer with a first refractive index value. A planarizing layer having a refractive index value equal to or greater than the first refractive index value is disposed on the n-layer or p-layer, and a patterned electrode is disposed on the n-layer or p-layer. An extractor having a light input surface is optically coupled to the planarizing layer. | 03-04-2010 |
| 20100051971 | HIGH EFFICIENCY LIGHT EMITTING ARTICLES AND METHODS OF FORMING THE SAME - A light emitting article ( | 03-04-2010 |
| 20100133574 | LIGHT EMITTING DEVICE WITH MULTILAYER SILICON-CONTAINING ENCAPSULANT - A light emitting device that includes a light emitting diode and a multilayer encapsulant is disclosed. The multilayer encapsulant includes a first encapsulant in contact with the light emitting diode and a photopolymerizable composition in contact with the first encapsulant. The first encapsulant may be a silicone gel, silicone gum, silicone fluid, organosiloxane, polysiloxane, polyimide, polyphosphazene, sol-gel composition, or another photopolymerizable composition. The photopolymerizable compositions include a silicon-containing resin and a metal-containing catalyst, the silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. Actinic radiation having a wavelength of 700 nm or less can be applied to initiate hydrosilylation within the silicon-containing resins. | 06-03-2010 |
| 20100283074 | LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER - A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter. | 11-11-2010 |
| 20100295057 | DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION - An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source. | 11-25-2010 |
| 20100295075 | DOWN-CONVERTED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION - A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features. | 11-25-2010 |
| 20110108858 | STABLE LIGHT SOURCE - Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged. | 05-12-2011 |
| 20110140128 | MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO - Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax ( | 06-16-2011 |
| 20110140129 | LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY - Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 06-16-2011 |
| 20110150019 | MONOCHROMATIC LIGHT SOURCE - Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 06-23-2011 |
| 20110156616 | ELECTRICALLY PIXELATED LUMINESCENT DEVICE - Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, methods for using electrically pixelated luminescent devices. | 06-30-2011 |
