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Catherine A. Leatherdale

Catherine A. Leatherdale, St. Paul, MN US

Patent application numberDescriptionPublished
20090035528Multi-photon reacted articles with inorganic particles and method for fabricating structures - A three-dimensional shaped structure is prepared from a multi-photon reactive composition including: (a) at least one reactive species; (b) a multi-photon photoinitiator system; and (c) a plurality of substantially inorganic particles, wherein the particles have an average particle size of less than about 10 microns in diameter.02-05-2009
20090284840PROCESS FOR MAKING MICROLENS ARRAYS AND MASTERFORMS - A process for making a microlens array or a microlens array masterform comprises 11-19-2009
20100027956MULTIPHOTON CURING TO PROVIDE ENCAPSULATED OPTICAL ELEMENTS - Methods of fabricating optical elements that are encapsulated in monolithic matrices. The present invention is based, at least in one aspect, upon the concept of using multiphoton, multi-step photocuring to fabricate encapsulated optical element(s) within a body of a photopolymerizable composition. Imagewise, multiphoton polymerization techniques are used to form the optical element. The body surrounding the optical element is also photohardened by blanket irradiation and/or thermal curing to help form an encapsulating structure. In addition, the composition also incorporates one or more other, non-diffusing binder components that may be thermosetting or thermoplastic. The end result is an encapsulated structure with good hardness, durability, dimensional stability, resilience, and toughness.02-04-2010

Patent applications by Catherine A. Leatherdale, St. Paul, MN US

Catherine A. Leatherdale, Saint Paul, MN US

Patent application numberDescriptionPublished
20110156002LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS - Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.06-30-2011