Patent application number | Description | Published |
20080197512 | Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby - A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer. | 08-21-2008 |
20080315333 | SUBSTRATE-LEVEL ASSEMBLY FOR AN INTEGRATED DEVICE, MANUFACTURING PROCESS THEREOF AND RELATED INTEGRATED DEVICE - A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidically isolated from the first empty space, is provided over the respective membrane of the further integrated device. | 12-25-2008 |
20090095705 | PROCESS FOR MANUFACTURING AN INTERACTION STRUCTURE FOR A STORAGE MEDIUM - A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm. | 04-16-2009 |
20100134101 | BROAD-RANGE MAGNETIC SENSOR AND MANUFACTURING PROCESS THEREOF - A magnetic sensor is formed by a fluxgate sensor and by at least one Hall sensor integrated in a same integrated device, wherein the magnetic core of the fluxgate sensor is formed by a magnetic region that operates also as a concentrator for the Hall sensor. The magnetic region is manufactured in a post-machining stage on the metallization layers wherein the energizing coil and sensing coil of the fluxgate sensor are formed; the energizing and sensing coils are formed on a semiconductor substrate housing the conductive regions of the Hall sensor. | 06-03-2010 |
20110193556 | INTEGRATED MAGNETIC SENSOR FOR DETECTING VERTICAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF - An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell. | 08-11-2011 |
20110210722 | INTEGRATED MAGNETIC SENSOR FOR DETECTING HORIZONTAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF - The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil. | 09-01-2011 |
20130001719 | INTERACTION STRUCTURE FOR A STORAGE MEDIUM - A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm. | 01-03-2013 |
20130299930 | INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane. | 11-14-2013 |