| Patent application number | Description | Published |
|---|
| 20100164016 | ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR MATERIAL PROVIDED FOR THRESHOLD ADJUSTMENT - The threshold voltage of a sophisticated transistor may be adjusted by providing a specifically designed semiconductor alloy in the channel region of the transistor, wherein a negative effect of this semiconductor material with respect to inducing a strain component in the channel region may be reduced or over-compensated for by additionally incorporating a strain-adjusting species. For example, a carbon species may be incorporated in the channel region, the threshold voltage of which may be adjusted on the basis of a silicon/germanium alloy of a P-channel transistor. Consequently, sophisticated metal gate electrodes may be formed in an early manufacturing stage. | 07-01-2010 |
| 20100289094 | ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY AN IN SITU ETCH PROCESS - When forming sophisticated gate electrode structures requiring a threshold adjusting semiconductor alloy for one type of transistor, a recess is formed in the corresponding active region, thereby providing superior process uniformity during the deposition of the semiconductor material. Due to the recess, any exposed sidewall surface areas of the active region may be avoided during the selective epitaxial growth process, thereby significantly contributing to enhanced threshold stability of the resulting transistor including the high-k metal gate stack. | 11-18-2010 |
| 20100327368 | ENHANCING SELECTIVITY DURING FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY A WET OXIDATION PROCESS - High-k metal gate electrode structures are formed on the basis of a threshold adjusting semiconductor alloy formed in the channel region of one type of transistor, which may be accomplished on the basis of selective epitaxial growth techniques using an oxide hard mask growth mask. The hard mask may be provided with superior thickness uniformity on the basis of a wet oxidation process. Consequently, this may allow re-working substrates prior to the selective epitaxial growth process, for instance in view of queue time violations, while also providing superior transistor characteristics in the transistors that do not require the threshold adjusting semiconductor alloy. | 12-30-2010 |
| 20110027952 | FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MASK FOR THE SELECTIVE EPITAXIAL GROWTH - A growth mask provided for the deposition of a threshold adjusting semiconductor alloy may be formed on the basis of a deposition process, thereby obtaining superior thickness uniformity. Consequently, P-channel transistors and N-channel transistors with an advanced high-k metal gate stack may be formed with superior uniformity. | 02-03-2011 |
| 20110129970 | ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR ALLOY AND A GATE DIELECTRIC BY AN OXIDATION PROCESS - In sophisticated transistor elements, long-term threshold voltage shifts in transistors comprising a threshold adjusting semiconductor alloy may be reduced by reducing the roughness of an interface formed between the threshold adjusting semiconductor material and the gate dielectric material. To this end, a portion of the threshold adjusting semiconductor material may be oxidized and may be removed prior to forming the high-k dielectric material. | 06-02-2011 |
