Patent application number | Description | Published |
20080290462 | PROTECTIVE STRUCTURE - A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone. | 11-27-2008 |
20110169596 | System and Method for Integrated Inductor - In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seemless ferromagnetic material surrounding at least a first portion of the conductor. | 07-14-2011 |
20110186972 | Method for Producing a Protective Structure - A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone. | 08-04-2011 |
20120034760 | Metallization for Chip Scale Packages in Wafer Level Packaging - In one embodiment, a method for forming the semiconductor device includes forming a first trench from a front side of a substrate. The substrate has a front side and an opposite back side, and the first trench having sidewalls and a bottom surface. A insulator layer is formed over the sidewalls and the bottom surface. A first conductive layer is formed over a top portion of the sidewalls of the first trench. The substrate is separated along the first trench. | 02-09-2012 |
20120086102 | Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 04-12-2012 |
20120161257 | Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same - Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed. | 06-28-2012 |
20120225544 | Method for producing a semiconductor component - Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×10 | 09-06-2012 |
20120289023 | Method for Producing a Semiconductor Device - A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench. | 11-15-2012 |
20120289047 | Method for Producing a Connection Region on a Side Wall of a Semiconductor Body - A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed. | 11-15-2012 |
20120306060 | Protective Structure - A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones. | 12-06-2012 |
20130065379 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment. | 03-14-2013 |
20130239404 | System and Method for Integrated Inductor - In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor. | 09-19-2013 |
20130260483 | Integrated Circuits With Magnetic Core Inductors And Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 10-03-2013 |
20130341771 | PROTECTIVE STRUCTURE - A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone. | 12-26-2013 |
20140028192 | Field Emission Devices and Methods of Making Thereof - In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device. | 01-30-2014 |
20140037116 | Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same - Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed. | 02-06-2014 |
20140097514 | Semiconductor Package and Method for Fabricating the Same - A semiconductor package includes a semiconductor chip, an inductor applied to the semiconductor chip. The inductor includes at least one winding. A space within the at least one winding is filled with a magnetic material. | 04-10-2014 |
20140103460 | MEMS Device and Method of Manufacturing a MEMS Device - A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack. | 04-17-2014 |
20140203399 | Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 07-24-2014 |
20140235039 | METHOD FOR PRODUCING A PROTECTIVE STRUCTURE - A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region. | 08-21-2014 |
20140264651 | Semiconductor Devices and Methods of Forming Thereof - In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane. | 09-18-2014 |
20140327103 | Semiconductor Device with an Electrode Buried in a Cavity - A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate. | 11-06-2014 |
20150056784 | Method for Manufacturing a Semiconductor Device by Thermal Treatment with Hydrogen - A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 μm to 200 μm, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. After forming the semiconductor regions, hydrogen is introduced into the porous area by a thermal treatment, activating a reallocation of pores and causing cavities to be generated. The semiconductor layer is separated from the semiconductor body along the porous area. After the separation, rear side processing is applied to the semiconductor layer. | 02-26-2015 |
20150069591 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage. | 03-12-2015 |